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    TGA8399B Search Results

    TGA8399B Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TGA8399B TriQuint Semiconductor 6-13 GHz Low Noise Amplifier Original PDF
    TGA8399B-EPU TriQuint Semiconductor 6-13 GHz Low Noise Amplifier Original PDF
    TGA8399B-EPU TriQuint Semiconductor 6-13 GHz Low Noise Amplifier Original PDF
    TGA8399B-SCC TriQuint Semiconductor Amplifier, 6-13GHz Low Noise Amplifier Original PDF

    TGA8399B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    x band radar

    Abstract: x-band mmic lna TGA8399B-SCC
    Text: Product Data Sheet 6-13 GHz Low Noise Amplifier TGA8399B-SCC June 28, 2002 Key Features and Performance • • • • • • • • 3 Stage LNA 0.25um pHEMT Technology 6-13 GHz Frequency Range 1.5 dB Typical Noise Figure Midband 26 dB Nominal Gain High Input Power Handling: ~ 20dBm


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    TGA8399B-SCC 20dBm TGA8399B-SCC 0007-inch x band radar x-band mmic lna PDF

    x band radar

    Abstract: TGA8399B-SCC
    Text: Product Data Sheet October 14, 2005 6-13 GHz Low Noise Amplifier TGA8399B-SCC Key Features and Performance • • • • • • • • 6-13 GHz Frequency Range 1.5 dB Typical Noise Figure Midband 26 dB Nominal Gain High Input Power Handling: ~ 20dBm Balanced Input for Low VSWR


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    TGA8399B-SCC 20dBm 0007-inch x band radar TGA8399B-SCC PDF

    TGA8399B

    Abstract: TGA8399C
    Text: Product Application Note July 27, 2001 Updated 1/27/03 DRAIN CURRENT ADJUSTMENT OF THE TGA8399B AND TGA8399C BACKGROUND: TriQuint Semiconductor Texas has two self-biased amplifiers which can be modified to increase or decrease the drain current. These devices are the TGA8399B (6-13 GHz Low Noise Amplifier) and the


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    TGA8399B TGA8399C TGA8399B TGA8399C PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information June 21, 2001 6-13 GHz Low Noise Amplifier TGA8399B-EPU Key Features and Performance • • • • • • • • Small Signal Gain dB Gain 26 -3 24 -6 22 -9 20 -12 Output RL 18 -15 16 -18 14 -21 12 • • Engineering Prototype Unit (EPU)


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    TGA8399B-EPU 20dBm 152mm 0007-inch PDF

    TGA8399B-EPU

    Abstract: No abstract text available
    Text: Advance Product Information August 30, 2001 6-13 GHz Low Noise Amplifier TGA8399B-EPU Key Features and Performance • • • • • • • • 28 Gain -3 24 -6 22 -9 20 -12 Output RL 18 -15 16 -18 14 -21 12 Primary Applications Return Loss dB 26 Small Signal Gain (dB)


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    TGA8399B-EPU 20dBm 152mm 0007-inch TGA8399B-EPU PDF

    Avago 9886

    Abstract: XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes
    Text: M O DE L I T HI CS EXEMPLAR LIBRARY LIBRARY USER MANUAL V11 For Agilent Technologies Advanced Design System MODELITHICS EXEMPLAR LIBRARY CONTENTS CONTENTS . 2 INSTALLATION INSTRUCTIONS . 8


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    com/peixun/antenna/116 //shop36920890 Avago 9886 XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes PDF

    TGA2517

    Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
    Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint


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    cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125 PDF

    TGA2519-SG

    Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
    Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m


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    AsareavailableforkeybandsacrossDCto100GHz Alldevicesare100% 11GHzCut-OffFreq TGC1430F-EPU TGC1430G-EPU TGC4401-EPU TriQuintSemiconductor5/06 S11/S22 DC-20 DC-18 TGA2519-SG HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519 PDF

    TGA2517

    Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
    Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


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    TGA8399B-EPU

    Abstract: No abstract text available
    Text: Advance Product Information 6-13 GHz Low Noise Amplifier Key Features and Performance Primary Applications 3 Stage LNA 0.25um pHEMT Technology 6-13 GHz Frequency Range 1.75 dB Typical Noise Figure Midband 25 dB Nominal Gain High Input Power Handling: ~ 20dBm


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    20dBm 41mmess TGA8399B-EPU PDF

    TG2H214220-FL

    Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
    Text: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4


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    ka band lna

    Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
    Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: [email protected] Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for


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    TGA2517

    Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
    Text: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4


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    Mil-Std-883 Wire Bond Pull Method 2011

    Abstract: MIL-STD-883 Method 2010 pHEMT transistor RF MESFET S parameters MESFET 0.15 phemt p-hemt TGA8310 MIL-STD-883 method 2011 GaAs 0.15 pHEMT
    Text: GaAs MMIC Space Qualification GaAs MMIC Testing TriQuint Semiconductor has advanced Lot Acceptance Testing LAT for High Reliability Applications of GaAs MMICs. A flowchart depicting the entire MMIC processing flow, including the Quality Conformance Inspection


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    Untitled

    Abstract: No abstract text available
    Text: TriQuirit <<Ê Advance Product Information BEMfWNDUGTQM» 6-13 GHz Low Noise Amplifier Key Features and Performance 3 Stage LNA 0.25um pHEMT Technology 6-13 GHz Frequency Range 1.75 dB Typical Noise Figure Midband TGA8399B-EPU Primary Applications Point-to-Point Radio


    OCR Scan
    20dBm TGA8399B-EPU PDF

    Untitled

    Abstract: No abstract text available
    Text: ThQuint^Ê SEMICONDUCTOR, \ Advance Product Information 6-13 GHz Low Noise Amplifier Key Features and Performance 3 Stage LNA 0.25um pHEMT Technology 6-13 GHz Frequency Range 1.75 dB Typical Noise Figure Midband 25 dB Nominal Gain High Input Power Handling: ~ 20dBm


    OCR Scan
    20dBm TGA8399B-EPU 100mm PDF