ai 972
Abstract: SURFACE MOUNT,0603 ANG-S21 TGF4112-EPU 144028 ps 8170
Text: 4112 TGF4112-EPU • • • • • 12 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 6.0 Watts at 2.3 GHz Nominal PAE of 54.5% at 2.3 GHz Nominal Gain of 12.7 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4112-EPU RF Performance at F = 2.3 GHz
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TGF4112-EPU
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ANG-S21
144028
ps 8170
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ANG-S21
Abstract: TGF4112
Text: TGF4112 12 mm Discrete HFET ο4112 August 5, 2008 • • • • • 0.5 um gate finger length Nominal Pout of 6.0 Watts at 2.3 GHz Nominal PAE of 54.5% at 2.3 GHz Nominal Gain of 12.7 dB at 2.3 GHz Die size 33.0 x 71.0 x 4.0 mils 0.8330 x 1.804 x 0.1016 mm
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TGF4112
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ANG-S21
Abstract: TGF4112-EPU
Text: TGF4112-EPU 12 mm Discrete HFET ο4112 February 22, 2001 • • • • • 0.5 um gate finger length Nominal Pout of 6.0 Watts at 2.3 GHz Nominal PAE of 54.5% at 2.3 GHz Nominal Gain of 12.7 dB at 2.3 GHz Die size 33.0 x 71.0 x 4.0 mils 0.8330 x 1.804 x 0.1016 mm
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994-85twork.
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Abstract: No abstract text available
Text: TGF4112 12 mm Discrete HFET ο4112 August 5, 2008 • • • • • 0.5 um gate finger length Nominal Pout of 6.0 Watts at 2.3 GHz Nominal PAE of 54.5% at 2.3 GHz Nominal Gain of 12.7 dB at 2.3 GHz Die size 33.0 x 71.0 x 4.0 mils 0.8330 x 1.804 x 0.1016 mm
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TGA2517
Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint
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cus937
TGA2517
TQP6M9002
TQM653029
TGS4304
SG-O1-16
TGA2503
TAT7469
TGA9092-SCC
854651
AH125
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TGA2519-SG
Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m
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AsareavailableforkeybandsacrossDCto100GHz
Alldevicesare100%
11GHzCut-OffFreq
TGC1430F-EPU
TGC1430G-EPU
TGC4401-EPU
TriQuintSemiconductor5/06
S11/S22
DC-20
DC-18
TGA2519-SG
HPA Ku
TGF4350-EPU
HPA41
ic 7435
TGC4401-EPU
ku vsat amplifier
TGA2512 price
tga8658
TGA2519
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TGA2517
Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
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TG2H214220-FL
Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Text: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4
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ka band lna
Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: [email protected] Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for
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TGA2517
Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
Text: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4
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Abstract: No abstract text available
Text: 12 mm Discrete HFET TGF4112-EPU • 0.5 um gate finger length • Nominal Pout of 6.0 Watts at 2.3 GHz • Nominal PAE of 54.5% at 2.3 GHz 9 Nominal Gain of 12.7 dB at 2.3 GHz 9 Die size 36.0 x 81.0 x 4.0 mils 411 0.914 X 2.057 x 0.102 mm TGF4112-EPU RF Performance at F = 2.3 GHz
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TGF4112-EPU
TGF4112-EPU
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Untitled
Abstract: No abstract text available
Text: TGF4112-EPU 12 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 6.0 Watts at 2.3 GHz • Nominal PAE of 54.5% at 2.3 GHz • Nominal Gain of 12.7 dB at 2.3 GHz • Die size 36.0 x 81.0 x 4.0 mils 4112 0.914 x 2.057 x 0.102 mm TGF4112-EPU RF Performance at F = 2.3 GHz
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TGF4112-EPU
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