VP 1176 datasheet
Abstract: LD 757 ps TGF4250-EEU 3 DG 1008
Text: T R I Q U I N T S E M TGF4250-EEU I C O N D U C 4.8 mm Discr ete HFET ● ● ● ● ● ● 4800 µm x 0.5 µm HFET T O R , I N C . 4250 Nominal Pout of 34- dBm at 8.5- GHz Nominal Gain of 8.5- dB at 8.5- GHz Nominal PAE of 53% at 8.5 - GHz Suitable for high reliability applications
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TGF4250-EEU
TGF4250-EEU
VP 1176 datasheet
LD 757 ps
3 DG 1008
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VP 1176
Abstract: VP 1176 datasheet TGF4250-EEU TriQuint Semiconductor bvgs VP+1176
Text: Product Data Sheet March 16, 2001 Discrete HFET TGF4250-EEU Key Features and Performance • • • • • • 4800µm x 0.5 µm FET Nominal Pout of 34dBm at 8.5GHz Nominal Gain of 8.5dB at 8.5GHz Nominal PAE of 53% at 8.5GHz Suitable for high reliability applications
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TGF4250-EEU
34dBm
TGF4250-EEU
VP 1176
VP 1176 datasheet
TriQuint Semiconductor
bvgs
VP+1176
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17417
Abstract: TGF4250-EEU
Text: S-Parameter Data for TGF4250-EEU # GHZ S MA R 50 ! TGF4250-EEU ! VD=8V, ID=30%IDSS Frequency S11 S21 S12 S22 GHz MAG ANG(o) MAG ANG(o) MAG ANG(o) MAG ANG(o) 0.5 0.943 -106.98 9.887 122.68 0.026 35.1 0.533 -163.66 1 0.932 -139.41 5.725 103.61 0.03 19.75 0.591
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TGF4250-EEU
17417
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VP 1176 datasheet
Abstract: TGF4250-SCC VP 1176
Text: Product Data Sheet December 16, 2002 DC - 10.5 GHz Discrete HFET TGF4250-SCC Key Features and Performance • • • • • • • Nominal Pout of 34 dBm at 8.5 GHz Nominal Gain of 8.5 dB at 8.5 GHz Nominal PAE of 53% at 8.5 GHz Suitable for high reliability applications
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TGF4250-SCC
TGF4250-SCC
0007-inch
VP 1176 datasheet
VP 1176
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Abstract: No abstract text available
Text: Product Data Sheet February 22, 2001 Discrete HFET TGF4250-EEU Key Features and Performance • • • • • • 4800µm x 0.5 µm FET Nominal Pout of 34dBm at 8.5GHz Nominal Gain of 8.5dB at 8.5GHz Nominal PAE of 53% at 8.5GHz Suitable for high reliability applications
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TGF4250-EEU
34dBm
TGF4250-EEU
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Abstract: No abstract text available
Text: Microwave/Millimeter-Wave Products TGF4250-EEU Preliminary 4.8 mm Discrete HFET The TriQuint TGF4250-EEU is a 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 10.5 GHz in Class A and
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TGF4250-EEU
TGF4260-EPU
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TGA2517
Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint
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cus937
TGA2517
TQP6M9002
TQM653029
TGS4304
SG-O1-16
TGA2503
TAT7469
TGA9092-SCC
854651
AH125
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TGF4250
Abstract: r02107 TGF4260 TGF4230 TGF4240 Design Seminar Signal Transmission ab 7614 Au Sn eutectic R0210
Text: APPLICATION NOTES: INTRODUCTION Designing High Efficiency Applifiers using HFETs HFET TriQuint Semiconductor has developed a range of Heterostructure FETs designed for power amplifier applications where high power-added efficiency is a key specification. They also offer the
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TGA2519-SG
Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m
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AsareavailableforkeybandsacrossDCto100GHz
Alldevicesare100%
11GHzCut-OffFreq
TGC1430F-EPU
TGC1430G-EPU
TGC4401-EPU
TriQuintSemiconductor5/06
S11/S22
DC-20
DC-18
TGA2519-SG
HPA Ku
TGF4350-EPU
HPA41
ic 7435
TGC4401-EPU
ku vsat amplifier
TGA2512 price
tga8658
TGA2519
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TGA2517
Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
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531 amplifier
Abstract: 14 Ghz microwave transceiver power amplifier s band ghz mhz 10 ghz gain block
Text: Component Selection Guide RF Wireless Communications Products Part Description TQ9114 TQ9121 TQ9122 TQ9132 30 – 500 MHz IF/AGC Amplifier 1.2 – 1.6 GHz Low-Noise Amplifier 500 – 2500 MHz Low-Noise Amplifier 800 – 2500 MHz 50-mW Driver Amplifier Gain dB
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50-mW
DCS-1800
GA1110E-20
GA1210E-20
531 amplifier
14 Ghz microwave transceiver
power amplifier s band ghz mhz
10 ghz gain block
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TG2H214220-FL
Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Text: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4
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ka band lna
Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: [email protected] Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for
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TGA2517
Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
Text: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4
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i678
Abstract: No abstract text available
Text: TGF4250-SCC, POWER MICROWAVE HFET A U G U S T 1994 0.5 |am x 1200 |am FET Output Power 28 dBm at 8.5 GHz Power Added Efficiency 50% at 8.5GHz ?!"!"!?!?! !?!?!?!?!?!?! 8.5dB Typical Large Signal Gain Size: 0,609 x 0,737 x 0,102 mm 0.024 x 0.029 x 0.004 in
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TGF4250-SCC,
TGF4250-SCC
TGF4250-SCC
MS/402
i678
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Untitled
Abstract: No abstract text available
Text: T R I Q U I N T S E M I C O N D U C T 7c TGF4250-EEU 4.8 mm Discrete HFET , I N C . 4250 4800 Nominal Pout of 3 4 -dBm at 8.5-GHz Nominal Gain of 8.5-dB at 8.5-GHz # Nominal PAE of 53% at 8 .5 -GHz Suitable for high reliability applications # 0,572 x 1,334 x 0,102 mm 0.023 x 0.053 x 0.004 in.
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