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    TH 2190 TRANSISTOR Search Results

    TH 2190 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TH 2190 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TH 2190 Transistor

    Abstract: TH 2190 mosfet z24 mosfet
    Text: Freescale Semiconductor Technical Data Rev. 2, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P21240R6 TH 2190 Transistor TH 2190 mosfet z24 mosfet

    transistor rf m 1104

    Abstract: TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET


    Original     		PDF MRF5P21240/D MRF5P21240R6 transistor rf m 1104 TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6

    TH 2190 Transistor

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5P21240/D MRF5P21240R6 TH 2190 Transistor

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P21240HR6 MRF5P21240HR6

    Untitled

    Abstract: No abstract text available
    Text: MRF5P21240 Rev. 2, 12/2004 Freescale Semiconductor Technical Data MRF5P21240R6 replaced by MRF5P21240HR6. “H” suffix indicates lower thermal resistance package. RF Power Field Effect Transistor MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5P21240 MRF5P21240R6 MRF5P21240HR6. MRF5P21240R6

    Untitled

    Abstract: No abstract text available
    Text: MRF5P21240 Rev. 2, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P21240 MRF5P21240R6

    th 2190

    Abstract: TH 2190 mosfet TH 2190 Transistor C 2640 rf transistor rf push pull mosfet power amplifier AN1955 CDR33BX104AKWS MRF5P21240 MRF5P21240HR6 MRF5P21240R6
    Text: Freescale Semiconductor Technical Data MRF5P21240 Rev. 2, 12/2004 MRF5P21240R6 replaced by MRF5P21240HR6. “H” suffix indicates lower thermal resistance package. RF Power Field Effect Transistor MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5P21240 MRF5P21240R6 MRF5P21240HR6. MRF5P21240R6 th 2190 TH 2190 mosfet TH 2190 Transistor C 2640 rf transistor rf push pull mosfet power amplifier AN1955 CDR33BX104AKWS MRF5P21240 MRF5P21240HR6

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P21240HR6

    MOSFET marking Z4

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P21240HR6 MRF5P21240HR6 MOSFET marking Z4

    TH 2190 mosfet

    Abstract: th 2190 A114 A115 AN1955 C101 JESD22 MRF5P21240HR6 TH 2190 Transistor
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P21240HR6 TH 2190 mosfet th 2190 A114 A115 AN1955 C101 JESD22 MRF5P21240HR6 TH 2190 Transistor

    th 2190

    Abstract: NIPPON CAPACITORS 400S A114 A115 C101 JESD22 MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 th 2190 NIPPON CAPACITORS 400S A114 A115 C101 JESD22 MRF6S21050L MRF6S21050LSR3

    th 2190

    Abstract: MRF6S21050LR3 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101
    Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 th 2190 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101

    NIPPON CAPACITORS

    Abstract: j668
    Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 NIPPON CAPACITORS j668

    motorola 5373

    Abstract: MRF21045
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21045R3 MRF21045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21045R3 MRF21045SR3 motorola 5373 MRF21045

    2120 r1

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21180 MRF21180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF21180 MRF21180S 2120 r1

    MOSFET Transistors IRL

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21180 MRF21180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF21180 MRF21180S MOSFET Transistors IRL

    wb4 marking

    Abstract: J152 mosfet transistor 2110 transistor
    Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF21180R6 wb4 marking J152 mosfet transistor 2110 transistor

    mosfet 400 mhz

    Abstract: MRF21045
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21045 MRF21045R3 MRF21045S MRF21045SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21045 MRF21045R3 MRF21045S MRF21045SR3 mosfet 400 mhz

    MRF21045

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21045LR3 MRF21045LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21045LR3 MRF21045LSR3 MRF21045

    MRF21045

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21045 MRF21045S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21045 MRF21045S

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3

    Untitled

    Abstract: No abstract text available
    Text: Green Product STB/P60L60A S a mHop Microelectronics C orp. Ver 2.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS ON . PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Typ ID High power and current handling capability.


    Original     		PDF STB/P60L60A O-220 O-263 O-220/263AB

    TH 2190 Transistor

    Abstract: 10 35L C5
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA1000-3.5L Designed primarily for wideband, large-signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers • Specified 19 Volt, 1000 MHz Characteristics:


    OCR Scan     		PDF MRA1000-3 145D-02, TH 2190 Transistor 10 35L C5

    vk200 rf choke

    Abstract: vk200 MRF156 VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 MRF156120 Arco 469 ceramic capacitor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-E ffect Transistors Motorola Preferred Device N-Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.


    OCR Scan     		PDF MRF156 MRF156R 340G-02, O-264AA) VK200 MRF156120 MRF156R 83-j3 vk200 rf choke VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 Arco 469 ceramic capacitor