abb phase control thyristors
Abstract: No abstract text available
Text: V DRM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 1370 A = 2160 A = 21.9x103 A = 1.18 V = 0.632 m Phase Control Thyristor 5STP 12K6500 Doc. No. 5SYA1069-02 Aug 10 • Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications
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12K6500
5SYA1069-02
CH-5600
abb phase control thyristors
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5STP08G6500
Abstract: abb phase control thyristors
Text: V DRM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 720 A = 1140 A = 11.8x103 A = 1.24 V = 1.015 m Phase Control Thyristor 5STP 08G6500 Doc. No. 5SYA1006-05 Aug 11 • Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications
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08G6500
5SYA1006-05
08G6500
CH-5600
5STP08G6500
abb phase control thyristors
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Untitled
Abstract: No abstract text available
Text: V DRM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 830 A = 1310 A = 11.8x103 A = 1.24 V = 1.015 m Phase Control Thyristor 5STP 08F6500 Doc. No. 5SYA1056-02 Aug 11 • Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications
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08F6500
5SYA1056-02
CH-5600
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Untitled
Abstract: No abstract text available
Text: V DRM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 350 A = 550 A = 4.5x103 A = 1.2 V = 2.3 m Phase Control Thyristor 5STP 03X6500 Doc. No. 5SYA1003-07 Aug. 11 • Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications
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03X6500
5SYA1003-07
CH-5600
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Untitled
Abstract: No abstract text available
Text: V DRM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 380 A = 600 A = 4.5x103 A = 1.2 V = 2.3 m Phase Control Thyristor 5STP 03D6500 Doc. No. 5SYA1055-03 Aug. 11 • Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications
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03D6500
5SYA1055-03
CH-5600
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abb phase control thyristors
Abstract: No abstract text available
Text: V RM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 1580 A = 2480 A = 29.7x103 A = 1.2 V = 0.458 m Bi-Directional Control Thyristor 5STB 18U6500 Doc. No. 5SYA1037-03 Aug. 10 • Two thyristors integrated into one wafer Patented free-floating silicon technology
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18U6500
5SYA1037-03
18U6500
650echanical
CH-5600
abb phase control thyristors
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ABB s
Abstract: No abstract text available
Text: V RM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 m Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-04 Aug. 10 • Two thyristors integrated into one wafer Patented free-floating silicon technology
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13N6500
5SYA1035-04
13N6500
65echanical
CH-5600
ABB s
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Untitled
Abstract: No abstract text available
Text: DCR1570L65 Phase Control Thyristor Preliminary Information DS5812-1.0 November 2004 LN23663 FEATURES Double Side Cooling KEY PARAMETERS High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 6500V 1568A 22000A 1500V/µs 300A/µs High Power Drives
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DCR1570L65
DS5812-1
LN23663)
2000A
DCR1570L65
DCR1570L60
DCR1570L55
DCR1570L50
300mA,
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5SYA2042
Abstract: 5SNA0400J650100
Text: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-03 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal
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0400J650100
CH-5600
5SYA2042
5SNA0400J650100
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 HiPak IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability
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0500J650300
CH-5600
0500J650300|
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5SYA2039
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 ABB HiPakTM IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability
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0500J650300
CH-5600
0500J650300|
5SYA2039
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Untitled
Abstract: No abstract text available
Text: G an E C P L E S S E Y NOVEMBERS SEMI CO NDUC TOR S DS4242-3.3 DCR820SG PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS V DRM 6500V ' t,av , 310A ' tsm 6000A dVdt* 1000V/ os
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DS4242-3
DCR820SG
DCR820SG65
DCR820SG64
DCR820SG63
DCR820SG62
DCR820SG61
DCR820SG60
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g65sc102
Abstract: G65SC04 G65SC02 G65SC12 sis 968 GTE 6502 sty 0620 Zl04 6502 microprocessor M6800
Text: G65SCXX Series G65SC1XX Series Microcircuits CMOS G65SCXXX 8-Bit Microprocessor Family Features General Description • C M O S fa m ily th a t is co m p a tib le w ith NM O S 6500 series m icroprocessors • Uses single +5 vo lt p o w er su p p ly • Low pow er co n su m p tio n 4m A @ 1 MHz allow s b attery-pow ered
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G65SCXX
G65SC1XX
G65SCXXX
65K-byte
968-4431/Telex
g65sc102
G65SC04
G65SC02
G65SC12
sis 968
GTE 6502
sty 0620
Zl04
6502 microprocessor
M6800
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g65sc04
Abstract: G65SC102 G65SC12 6500 Microprocessors G65SC02 M6800 MC6800 G65SC12-15 G65SC1XX D1130
Text: 5 3 00 ß G65SCXX Series G65SC1XX Series L /At c a free+"sSe r Microcircuits CMOS G65SCXXX 8-Bit Microprocessor Family Features General Description • C M O S fa m ily that is co m p a tib le w ith NM O S 6500 series m icroprocessors • Uses single +5 vo lt p o w er su p p ly
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G65SCXX
G65SC1XX
G65SCXXX
65K-byte
65SCXXX
g65sc04
G65SC102
G65SC12
6500 Microprocessors
G65SC02
M6800
MC6800
G65SC12-15
D1130
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T D R Revised April 1999 tm Data flow in each direction is controlled by output-enable O E A B and O EBA , latch-enable (LEAB and LEBA), and clock (C LKAB and C LKBA) inputs. The L C X 1 6500 is designed fo r low voltage (2.5V or 3.3V)
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74LCX16500
74LCX16500
18-Bit
X16500
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PDF
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Untitled
Abstract: No abstract text available
Text: DCR1020SF M ITEL Phase Control Thyristor S E M IC O N D U C T O R Supersedes Novem ber 1997 version, DS4245 - 3.1 DS4245 - 3.2 KEY PARAMETERS VDRM 6500V 515A Jt a v 10700A TSM 1000V/|iS dVdt 100A/|iS d l/d t APPLICATIONS • High Pow er Drives. ■
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DCR1020SF
DS4245
0700A
020SF65
020SF64
020SF63
020SF62
020SF61
020SF60
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g65sc102
Abstract: G65SC12 G65SCXX G65SC02 G65SCXXX 6500 Microprocessors 6502 microprocessor F4.5C 4.5 MHZ M6800 MC6800
Text: A G65SCXX Seríes G65SC1XX Series CMD Microcircuits C M O S G 65SCXXX 8-Bit Microprocessor Family General Description Features • CMOS fam ily th a t is com patible w ith NMOS 6500 series microprocessors • Uses single + 5 volt power supply • Low power consumption 4mA @ 1 MHz allows battery-powered
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G65SCXX
G65SC1XX
G65SCXXX
65K-byte
g65sc102
G65SC12
G65SC02
6500 Microprocessors
6502 microprocessor
F4.5C 4.5 MHZ
M6800
MC6800
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6502 CPU architecture block diagram
Abstract: a04e transistor CPU 6502 A1ED 6500 CPU NCR6500/1 A04E a04e 130 Edge 6500 10013F
Text: 6500/1 and 6 500/1E NC • • • • • • SINGLE-CHIP MICROCOMPUTER 6502 CPU • - 8-bit parallel processing •Software upward / downward compatibility ■ 13 addressing modes - Decimal or binary arithmetic - True indexing capability ■ Memory addressable I/O
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6500/1E
2048x8
16-bit
A0-A11,
AO-A11,
6502 CPU architecture block diagram
a04e transistor
CPU 6502
A1ED
6500 CPU
NCR6500/1
A04E
a04e 130
Edge 6500
10013F
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R6502
Abstract: CPU R6502 R6500 microcomputer system programming manual R6502 CPU rb541 microprocessor Rockwell R6500 R6541Q Rockwell 6502 z80 processor architecture R6541
Text: R6541Q • R6500/41, /42, /43 R6500 M icrocom puter System R6541Q, R6500/41, R6500/42 & R6500/43 ONE-CHIP INTELLIGENT PERIPHERAL CONTROLLER * Rockwell FEATURES INTRODUCTION • D irectly co m pa tib le w ith 6500, 6800, 8080, and Z80 bus T he R ockw ell R6541Q, R 6500/41, R 6500/42 and R 6500/43
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R6541Q
R6500/41,
R6500
R6541Q,
R6500/42
R6500/43
R6500/42
R6502
CPU R6502
R6500 microcomputer system programming manual
R6502 CPU
rb541
microprocessor Rockwell R6500
R6541Q
Rockwell 6502
z80 processor architecture
R6541
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NDF653
Abstract: NDF65310 NDF65312 NDF65314 NDF65316
Text: NDF653 M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes M ay 1998 version, DS4203 -2.4 DS4203 - 3.0 M ay 1998 KEY PARAMETERS V RRM 1600V 660A Jf AV 6500A FSM 45|lC Q, 1.4|is APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers.
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NDF653
DS4203
NDF65316
NDF65314
NDF65312
NDF65310
CB479.
NDF653
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PDF
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R2114P
Abstract: R2114
Text: PART NUMBER DOCUM ENT NO. 2 9 0 0 0 D 44 REVISION 2. OCT. 1 97 8 * Rockwell R 2114 R 6500 Microcomputer System DATA SHEET 1024 X 4 STATIC RANDOM ACCESS M EMORY R2114 SYSTEM ABSTRACT FEATURES T h e ' 8 -b it R 6 50 0 m icro co m p u te r system is produced w ith N-
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R2114
R2114P
R2114
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PDF
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6500 CPU
Abstract: MC701 Edge 6500 NCR Microelectronics Division CPU 6502 F400 6502 cpu 6500 NCR6500/A1ED
Text: NIC R 6500/11, 6500/12, 6500/13 and 6500/11E SINGLE-CHIP MICROCOMPUTER * * * * * Enhanced 6502 CPU • 8-bit p ip elined arc h ite c tu re - 4 new b it m a n ipu latio n instru ctio ns set m em ory bit, reset m em ory bit, branch on b it set, branch on bit reset
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6500/11E
192-byte
16-bit
6500 CPU
MC701
Edge 6500
NCR Microelectronics Division
CPU 6502
F400
6502 cpu
6500
NCR6500/A1ED
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PDF
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GT 1081
Abstract: S5 3000 T1791N
Text: Freewheeling Diodes Type V D D V(drm) V l(FSM) l (2)d t kA A(2>s kV Tc= -25 .+85°C I(RM) V /kA 2000, 2500 typ 1,25 24 2880 *103 2,62/6,4 3500.4500 3500.4500 3500.4500 4500 4500 4500 4500 4500 6500 typ 2 18 32 45 18 32 4,5 18 32 26 1620 5120 1012
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50A/ps
GT 1081
S5 3000
T1791N
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CA3137E
Abstract: CA3137
Text: TV/CATV Circuits CA3137E TV Chroma Demodulator Features: 16-Lead D u a M n -L in e Plastic Package H -1 6 2 2 • Balanced chrom a demodulators m C olor difference m atrix 6500° K m DC tin t co n tro l a Three low-output-im pedance drivers for direct coupling
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CA3137E
16-Lead
CA3137E
CA3137
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PDF
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