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    THERMAL CONDUCTIVITY CERAMIC FET Search Results

    THERMAL CONDUCTIVITY CERAMIC FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    THERMAL CONDUCTIVITY CERAMIC FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Power Modules Win Out, but Choose Wisely Introduction Whether evaluating step-down switching regulators at the silicon-level controller with FET , or power modules where the integration and ease of use of a more complete power supply subsystem may be preferred, system designers everywhere are under enormous pressure. They’re being tasked with integrating


    Original     		PDF

    TC3967

    Abstract: 2w, GaAs FET thermal conductivity ceramic FET
    Text: TC3967 REV.1_04/27/2005 2W Packaged Self-Bias PHEMT GaAs Power FETs FEATURES • 2W Typical Output Power • 12.5dB Typical Linear Power Gain at 2.45GHz • High Linearity: IP3 = 43 dBm Typical • High Power Added Efficiency: Nominal PAE of 35% • Breakdown Voltage: BVDGO ≥ 15V


    Original     		PDF TC3967 45GHz TC3967 TC1601N 2w, GaAs FET thermal conductivity ceramic FET

    AE-POWER

    Abstract: TC3967
    Text: TC3967 REV2_20080516 2 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 2W Typical Output Power • 13dB Typical Linear Power Gain at 2.45GHz • • • High Linearity: IP3 = 43 dBm Typical High Power Added Efficiency: Nominal PAE of 35% Breakdown Voltage: BVDGO ≥ 15V


    Original     		PDF TC3967 45GHz TC3967 TC1601N AE-POWER

    TC3977

    Abstract: 2.45Ghz oscillator
    Text: TC3977 PRE2_20050418 Preliminary 3 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 3W Typical Output Power • 12dB Typical Linear Power Gain at 2.45GHz PHOTO ENLARGEMENT • High Linearity: IP3 = 45 dBm Typical • High Power Added Efficiency: Nominal PAE of 35%


    Original     		PDF TC3977 45GHz TC3977 TC1706N 2.45Ghz oscillator

    TC3889

    Abstract: thermal conductivity ceramic FET TC1806
    Text: TC3889 PRE.2_04/27/2005 Preliminary 5W Packaged Self-Bias PHEMT GaAs Power FETs FEATURES • 5W Typical Output Power • 12dB Typical Linear Power Gain at 2.0GHz • High Linearity: IP3 = 47 dBm Typical • High Power Added Efficiency: Nominal PAE of 35% •


    Original     		PDF TC3889 TC3889 TC1806N thermal conductivity ceramic FET TC1806

    TC3879

    Abstract: thermal conductivity ceramic FET
    Text: TC3879 PRE1_20070518 Preliminary 7 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES PHOTO ENLARGEMENT ! 7W Typical Output Power ! 10.5dB Typical Linear Power Gain at 2.45 GHz ! High Linearity: IP3 = 48.5 dBm Typical ! High Power Added Efficiency: Nominal PAE of 35%


    Original     		PDF TC3879 TC3879 thermal conductivity ceramic FET

    TC2996D

    Abstract: GaAs FET chip GRM39Y5V104Z25V
    Text: TC2996D REV2_20070503 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 2.45 GHz • 11 dB Typical Linear Power Gain at 2.45 GHz PHOTO ENLARGEMENT • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %


    Original     		PDF TC2996D TC2996D GRM39COG0R7C50V GRM39COG1R5C50V 1000PF GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L) GRM39COG2R5C50V GaAs FET chip GRM39Y5V104Z25V

    UM 7106

    Abstract: TC2696 2.45 Ghz power amplifier
    Text: TC2696 REV.2_04/12/2004 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • 2 W Typical Output Power at 2.45 GHz • 14 dB Typical Linear Power Gain at 2.45 GHz • High Linearity: IP3 = 43 dBm Typical at 2.45 GHz • • High Power Added Efficiency:


    Original     		PDF TC2696 TC2696 TC1606 UM 7106 2.45 Ghz power amplifier

    UM 7106

    Abstract: 6847 TC2696 RF FET TRANSISTOR 3 GHZ
    Text: TC2696 REV4_20070507 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES PHOTO ENLARGEMENT • 2 W Typical Output Power at 6 GHz • 10 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 43 dBm Typical at 6 GHz • High Power Added Efficiency:


    Original     		PDF TC2696 TC2696 TC1606 UM 7106 6847 RF FET TRANSISTOR 3 GHZ

    IPC-4562

    Abstract: BERGQUIST mp-06503 ZPMV UL746E RD2018 HT-04503 HT-09009 Bergquist - Thermal Clad HPL Dielectric CML11-006 ASTM 5470 GAP FILLER
    Text: TCDG_Cover_09.09.qxp 9/8/2009 1:43 PM Page 3 Thermal Solutions For Surface Mount Power Applications ThermalClad S E L E C T I O N G U I D E TCDG_Cover_09.09.qxp 9/8/2009 September 2009 1:43 PM Page 4 Thermal Clad®: U.S. Patent 4,810,563 and others. All statements, technical information and recommendations herein are based on tests we believe to be reliable, and


    Original     		PDF

    CAP 0805 ATC 600F

    Abstract: chip resistor 1206 CW-37 American Technical Ceramics GaAs FET chip GRM39Y5V104Z25V murata cw
    Text: TC2997D REV3_20050418 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs PHOTO ENLARGEMENT FEATURES • 20W Typical Power at 2.45 GHz • 10dB Typical Linear Power Gain at 2.45 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %


    Original     		PDF TC2997D TC2997D GRM39COG0R75C50V GRM39COG2RC50V GRM39COG1R2C50V GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L) 250WVDC) CAP 0805 ATC 600F chip resistor 1206 CW-37 American Technical Ceramics GaAs FET chip GRM39Y5V104Z25V murata cw

    baara

    Abstract: EL7532IY EL7532IYZ babaa EL7532 EL7532IY-T13 EL7532IY-T7 EL7532IYZ-T13 EL7532IYZ-T7 MSOP10
    Text: EL7532 Data Sheet August 12, 2005 FN7435.5 Monolithic 2A Step-Down Regulator Features The EL7532 is a synchronous, integrated FET 2A step-down regulator with internal compensation. It operates with an input voltage range from 2.5V to 5.5V, which accommodates


    Original     		PDF EL7532 FN7435 EL7532 100ms 10-pin baara EL7532IY EL7532IYZ babaa EL7532IY-T13 EL7532IY-T7 EL7532IYZ-T13 EL7532IYZ-T7 MSOP10

    Untitled

    Abstract: No abstract text available
    Text: TC2876 REV4_20070507 5 W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES PHOTO ENLARGEMENT • 5 W Typical Output Power at 6 GHz • 7 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 47 dBm Typical at 6 GHz • High Power Added Efficiency:


    Original     		PDF TC2876 TC2876 TC1806

    Alumina submount

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . V ishay Ele c tro - Films l e d sub m o u n t s ceramic thin film led package p r o d uc t o v e r v i e w w w w. v i s h a y. c o m ceramic thin film led package Vishay Electro-Films Vishay Electro-Films: Ceramic Thin Film LED Package


    Original     		PDF operatin65-6788-6668 VMN-PL0440-1003 Alumina submount

    Untitled

    Abstract: No abstract text available
    Text: EL7532 Data Sheet March 16, 2005 FN7435.4 Monolithic 2A Step-Down Regulator Features The EL7532 is a synchronous, integrated FET 2A step-down regulator with internal compensation. It operates with an input voltage range from 2.5V to 5.5V, which accommodates


    Original     		PDF EL7532 FN7435 EL7532 100ms 10-pin

    Untitled

    Abstract: No abstract text available
    Text: EL7532 Data Sheet January 12, 2005 FN7435.3 Monolithic 2A Step-Down Regulator Features The EL7532 is a synchronous, integrated FET 2A step-down regulator with internal compensation. It operates with an input voltage range from 2.5V to 5.5V, which accommodates


    Original     		PDF EL7532 FN7435 EL7532 100ms 10-pin

    10-PIN

    Abstract: EL7535 EL7535IY EL7535IY-T13 EL7535IY-T7 MSOP10
    Text: EL7535 Data Sheet April 19, 2004 FN7003 Monolithic 350mA Step-Down Regulator Features The EL7535 is a synchronous, integrated FET 350mA step-down regulator in a MSOP10 package. The regulator is internally compensated, which makes it possible to use just five tiny external components to form a complete


    Original     		PDF EL7535 FN7003 350mA EL7535 MSOP10 10-PIN EL7535IY EL7535IY-T13 EL7535IY-T7

    power combiner broadband transformers

    Abstract: 4 port circulator high power duplexer HIGH POWER HIGH FREQUENCY CVD DIAMOND CHIP RESISTORS footprint X-band Gan Hemt resistor parasitic capacitance DIAMOND TECHNOLOGIES DUAL JUNCTION CIRCULATOR CT1310D RFTM 9926 transistor
    Text: Diamond Rf Resistives: The Answer to High Power and Low Capacitance | Novembe. Page 1 of 6 November 2011 issue: Technical Feature Diamond Rf™ Resistives: The Answer to High Power and Low Capacitance A single 0402 resistor, manufactured on a CVD diamond substrate, can dissipate 20 W of continuous


    Original     		PDF

    pHEMT 6GHz

    Abstract: TC3947 tc1401n
    Text: TC3947 REV2_20080516 0.5W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 0.5W Typical Output Power at 6GHz • 12dB Typical Linear Power Gain at 6GHz • High Linearity: IP3 = 37 dBm Typical at 6GHz • High Power Added Efficiency: Nominal PAE of 35% at 6GHz


    Original     		PDF TC3947 TC3947 TC1401N pHEMT 6GHz

    pHEMT 6GHz

    Abstract: 0619 817A TC3957
    Text: TC3957 REV2_20080516 1W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 1W Typical Output Power at 6GHz • 10dB Typical Linear Power Gain at 6GHz • High Linearity: IP3 = 40 dBm Typical at 6GHz • High Power Added Efficiency: Nominal PAE of 35% at 6GHz


    Original     		PDF TC3957 TC3957 TC1501N pHEMT 6GHz 0619 817A

    HERMETIC SMD

    Abstract: to258 EXCEL SMD SMD Devices smd diode ED CLCC 64 pins footprint TO-25X
    Text: New Materials and Technologies Solve Hermetic SMD Integration Tiva Bussarakons, International Rectifier, Inc., El Segundo, California H ermetic semiconductor Package Construction SMDs surface-mount The SMD package (Figure 1 difdevices) can now be fers considerably from its predecessuccessfully and ecosor, the CLCC (ceramic leadless


    Original     		PDF

    TC2896

    Abstract: gm 8562 TC289 TC1806
    Text: TC2896 REV4_20070507 5 W Flange Ceramic Packaged GaAs Power FETs FEATURES PHOTO ENLARGEMENT • 5 W Typical Power at 6 GHz • 8 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 47 dBm Typical at 6 Ghz • High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz


    Original     		PDF TC2896 TC2896 TC1806 gm 8562 TC289

    Untitled

    Abstract: No abstract text available
    Text: EL7535 Data Sheet March 16, 2005 FN7003.1 Monolithic 350mA Step-Down Regulator Features The EL7535 is a synchronous, integrated FET 350mA stepdown regulator in a MSOP10 package. The regulator is internally compensated, which makes it possible to use just


    Original     		PDF EL7535 FN7003 350mA EL7535 MSOP10

    EL7532

    Abstract: EL7532IL EL7532IL-T13 EL7532IL-T7 EL7532IY EL7532IY-T13 EL7532IY-T7 MSOP10
    Text: EL7532 Data Sheet PRELIMINARY April 26, 2004 FN7435 Monolithic 2A Step-Down Regulator Features The EL7532 is a synchronous, integrated FET 2A step-down regulator with internal compensation. It operates with an input voltage range from 2.5V to 5.5V, which accommodates supplies of 3.3V, 5V, or a Li-Ion


    Original     		PDF EL7532 FN7435 EL7532 100ms EL7532IL EL7532IL-T13 EL7532IL-T7 EL7532IY EL7532IY-T13 EL7532IY-T7 MSOP10