transistor BF 506
Abstract: bf506 wl SOT-23
Text: TELEFUNKEN ELECTRONIC filC D • A'^QQ'Jb 0005513 'i ■ AL6G ^ 7 2 / ~ TTIdilFlLDMDSIKl electronic | B F 506 Creative Technologies * Silicon PNP RF Transistor Applications: Oscillator-, mixer and uncontrolled pre-amplifier stages up to 300 MHz Features: • Small feedback capacitance
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569-GS
transistor BF 506
bf506
wl SOT-23
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transistor C639
Abstract: transistor C635 c639 transistor C639 w
Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
transistor C639
transistor C635
c639
transistor C639 w
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Untitled
Abstract: No abstract text available
Text: 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA*25t: C haracteristic Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 251
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2N6520
-50mA,
-10mA
-100V,
-50mA
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Untitled
Abstract: No abstract text available
Text: DTA144TE DTA144TUA DTA144TKA Digital transistor, PNP, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTA144TE (EMT3) 0 .7 ± û . I bias resistor consists of a thin-film resistor which is completely isolated,
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DTA144TE
DTA144TUA
DTA144TKA
SC-70)
SC-59)
DTA144TE,
DTA144TUA,
DTA144TKA;
DTA144TE
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BDT42
Abstract: BDT41 BDT42B IEC134 TIP42 TIP42 equivalent T3321
Text: N AMER PHILIPS/DISCRETE 2SE D • bbS3T31 0 0 n 7 2 T ■ BDT42;A BDT42B;C T-33-ÄJ SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. The TIP42 series is an equivalent type, P-N-P complements are
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BDT42
BDT42B
T-33-Ã
TIP42
BDT41
O-220AB
7Z82922
00n735
7Z82918
IEC134
TIP42 equivalent
T3321
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K 3911
Abstract: BUK451-60A BUK451-60B T0220AB
Text: Philips Components D ata sheet status Preliminary specification date of issue March 1991 PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUK451-60A/B
711Dfl2b
BUK451
711Gfi2b
44S73
K 3911
BUK451-60A
BUK451-60B
T0220AB
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Untitled
Abstract: No abstract text available
Text: BAI F4Z Com pound Transistor * P M J m W -f& M m ip - ii : m m * (R i = 22 k£2) OBN1F4Z t n > 7 ‘ ij y > ^ U Tf4:fflT"§ it,. ( T a = 25 °C ) m g »§• %- /E fS ip- i£ VljBO 60 V ■3 v 9 -y ■x . i -, 9H H 7 ir£ V e to 50 V - -9 * V kbo 5 V 3 u
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Untitled
Abstract: No abstract text available
Text: BF620 BF622 _ _^ SILICON EPITAXIAL TRANSISTORS* • For video output stages N-P-N transistors in a microminiature plastic envelope intended for class-B video output stages in colour television receivers. P-N-P complements are BF621 and BF623 respectively.
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BF620
BF622
BF621
BF623
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Data sheet status P ro d u c t s p e c ific a tio n date of issue A p ril 1 9 9 5 BSP220 P-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES PARAMETER SYMBOL • Direct interface to C-MOS, TTL, etc. “Vds
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BSP220
OT223
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Untitled
Abstract: No abstract text available
Text: Die no. D-25 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. Dimensions Units : mm TO-92 Features • available in TO-92 package, for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCES = 30 V (min) at
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MPS-A13
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Untitled
Abstract: No abstract text available
Text: BF583 BF585 BF587 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in T 0 -2 0 2 plastic package, intended fo r use in video o u tp u t stages in black-andw h ite and in c o lo u r television receivers. QUICK REFERENCE D ATA BF583 BF585 BF587 v CBO max.
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BF583
BF585
BF587
BF587
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sgsp358
Abstract: tr/pcb-3/SGSP358
Text: SGS-THOMSON SGSP358 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS ^DS on SGSP358 50 V 0.3 a Id 7A HIGH SPEED SWITCHING APPLICATIONS GENERAL PURPOSE ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS:
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SGSP358
O-220
sgsp358
tr/pcb-3/SGSP358
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE ]> bb53R31 0030610 Tib « A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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bb53R31
T0220AB
BUK555-1OOA/B
BUK555
BUK555-100A/B
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2SD78
Abstract: 2SD73 2s096 2SB481 2SD315 2SD79 2SD96 2SD102 2SD103 2sb48
Text: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SD78
2SD79
2SD73,
40-S20
2SD315
2SD328
2SD73
2s096
2SB481
2SD315
2SD96
2SD102
2SD103
2sb48
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Untitled
Abstract: No abstract text available
Text: • £.b53531 002MLi21 ?TD H A P X N AUER PHILIPS/DISCRETE BF510 to 513 b?E D J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended fo r applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special
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b53531
002MLi21
BF510
BF510)
BF511)
BF512)
BF513)
bb53531
D02MbE4
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SEF442
Abstract: c230 diode SEF440
Text: S G S-THOMSON S 7T2ci237 QQlâQD'i : 73C 17 506 D T- 3 f . N -C H A N N EL POW ER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors. A BSO LU TE MAXIMUM RATINGS
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SEF440
SEF441
SEF442
SEF443
00V/450V
00V/450V
SEF443
c230 diode
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s149
Abstract: transistor Siemens 14 S S 92
Text: SIEMENS SIPMOS Small-Signal Transistor • • • • • • • B SS 149 Vos 200 V ID 0.35 A ^DS on 3.5 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Tape and Reel Inform ation PinC onfigu ration Marking
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E6325:
SS149
Q62702-S623
Q67000-S252
s149
transistor Siemens 14 S S 92
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MC 140 transistor
Abstract: "MC 140" transistor buz355 transistor 502 alps 502 C alps 503 a
Text: N AMER PHILIPS/DISCRETE j ObE D • PowerMÔS transistor ^53131 0014015 5 m BÜZ355 r - 3cj - l 3 May 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUZ355T
is-18
T0218AA;
BUZ355
T-39-13
MC 140 transistor
"MC 140" transistor
buz355
transistor 502
alps 502 C
alps 503 a
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Untitled
Abstract: No abstract text available
Text: ROHM CO LTD N7 > V 4DE D 000SA04 8 E3RHM $ / T ransistors 2SC3969 7 - 2 1 . - 0 ¡3 S H M i £ i & 7 ° U - ^ N y 3-> P N y ' j 3 > h 7 > y 7 J $ raiSiJE^ < “^ ffl/High Voltage Switching Triple Diffused Planar NPN Silicon Transistor • W fi\f';i|3 ]/'D in ie n s io n s U n it: mm
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000SA04
2SC3969
50/iS
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bu 508 df
Abstract: No abstract text available
Text: SIEMENS BUZ 73 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 73 A Yds 200 V b 5.5 A flbSion Package Ordering Code 0.6 n TO-220 AB C67078-S1317-A3 Maximum Ratings Parameter Symbol Continuous drain current b Tc = 37 °C
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O-220
C67078-S1317-A3
15onductor
bu 508 df
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BSW68A 1990
Abstract: bsw68a
Text: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO
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BSW66A
BSW67A
BSW68A
BY206
BSW68A 1990
bsw68a
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / ELECTRONDEVICE SILICON TRANSISTOR / _ _ FIM1L4Z M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M IN I MOLD FEATURES • Resistor B u ilt-in TYPE O'— ' V W — ft. • C o m plem entary to F A 1 L 4 Z a b s o l u t e : m a x im u m
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Untitled
Abstract: No abstract text available
Text: 2SE D N AMER PHILIPS/DISCRETE bt.53131 0011721 4 • BDT42;A BDT42B;C T -3 3 -*/ SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. The TIP42 series is an equivalent type. P-N-P complements are
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BDT42
BDT42B
TIP42
BDT41
BDT42
BDT42A
b53T31
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2SB75
Abstract: 2sb405 2sb77 d 2SB505 2SB506 2SB77 2SB75 B 2SB77 C 2SB75 C
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English
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7C-25-C)
2SB75
2sb405
2sb77 d
2SB505
2SB506
2SB77
2SB75 B
2SB77 C
2SB75 C
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