TIC 236 TRANSISTOR Search Results

TIC 236 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TIC 236 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
N6055 Abstract: RCA-2N6055 SUS CIRCUIT 2N6055 2N6056 darlington npn rca TYPES OF TRANSISTORS TEKTRONIX TRANSISTORS Text: 3875081 G E SOLID STATE~Öl Dlf\| 3375001 0017534 7 ^ $ 3Darlington Power ? _ 2N6055, 2N6056 File Number 8-Ampere Silicon N-P-N Darlington Power Transistors 60- and 80-Volt, 100-Watt Types	OCR Scan	3fl75Dfll 0D17534 2N6055, 2N6056 80-Volt, 100-Watt O-204AA RCA-2N6055 0D17H3Ã N6055 SUS CIRCUIT 2N6055 darlington npn rca TYPES OF TRANSISTORS TEKTRONIX TRANSISTORS	PDF
m2n7000 Abstract: 1000J sot23 BS170 Text: Tem ic 2N7000/7002, VQIOOOJ/P, BS170_ slUconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V B R D S S Min (V) * * D S (o n ) Max (Q) I d (A) Vr.s(ih) (V) 2N7000 5 @ V gs = 10V 0.8 to 3 0.2 2N7002 7.5 @ V gs = 10 V 1 to 2.5	OCR Scan	2N7000/7002, BS170_ 2N7000 2N7002 VQ1000J VQ1000P BS170 P-37993-- VQ1000J/P, m2n7000 1000J sot23 BS170	PDF
65e7 Abstract: BCY65 BCY 59 bcy58 59VIII BCY58-VIII BCY59 Q60203-Y58-G BCY 65 Q60203-Y59-J Text: BCY 58, BCY 59, BCY 65 E ~ 2 N 2483 NPN Transistors fo r AF prestages, driver stages and switching applications BCY 58, BCY 59 and BCY 65 E are silicon planar NPN epitaxial transistors in a case 18 A 3 DIN 41 876 (TO -18). The collector is electrically connected to the case.	OCR Scan	Q60203-Y58-G Q60203-Y Q60203-Y58-J Q60203-Y58-K Q60203-Y59-J Q60203-Y59-K 65-E7 65e7 BCY65 BCY 59 bcy58 59VIII BCY58-VIII BCY59 BCY 65	PDF
transistor BC 236 Abstract: No abstract text available Text: MPSH81 //W U Eq U TO MMBTH81 -236 23 TO S O T - -92 T L /G /10100-5 Bc T L /G /1 0 1 0 0 -1 PNP RF Transistor Electrical Characteristics Symbol ta = 25°c unless otherwise noted Parameter Min Max Units OFF CHARACTERISTICS v (BR)CEO V (B R )C BO V (B R )E B O	OCR Scan	MPSH81/MMBTH81 MPSH81 MMBTH81 transistor BC 236	PDF
transistor Bs 998 Abstract: No abstract text available Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 F e a tu re s • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 5:1 Type B F 998 M arking MO O rd ering C o d e tape and reel 1 Q 6 2 7 0 2 -F 1 129	OCR Scan	BB515 p270k2 transistor Bs 998	PDF
F587 Abstract: TI 740 Text: SSC D • ß 2 3 S b G 5 ÜQOMbTB 3 H S I E 6 . NPN Silicon RF Transistors BFS 18 BFS 18 R SIEMENS AKTIENGESELLSCHAF 0 ~ T ^ 3 I- '0 -BFS 19 BFS 19 R BFS 18 and BFS 19 are epitaxial NPN silicon planar transistors in TO 236 plastic package 23 A 3 DIN 41869 . These transistors were especially designed fo r use in RF circuits	OCR Scan	62702-F30 F587 TI 740	PDF
TA2765 Abstract: 2N5240 Text: File Number 321 2N5239, 2N5240 High-Voltage, Silicon N-P-N Transistors For H ig h-S p eed S w itching and Linear-A m plifier A pplications in Industrial and C om m erical Service Features: • H ig h volta ge ra tin g s : 1 / c e r [ s u s ] = 3 5 0 V, A be < 50 O 2N5240	OCR Scan	2N5239, 2N5240 2N5240) 2N5239) 92LS-1969R1 S-12874 TA2765 2N5240	PDF
BC327 Abstract: cbc328 BC328 BC 327 bc 327 complementary pair c 337 25 BC3280 pF83 Text: BC 327 • BC 328 Silii’ium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: Treiber und Endstufen A p p lic a tio n s : Driver and p o w e r stages Besondere Merkmale: Features: • Verlustleistung 625 mW • Power dissipation 625 m W	OCR Scan		PDF
321A15 Abstract: k0321 powerex kd kd32 Text: POWEREX INC m TöD m D THTHbHl O Q O a m 3 o KD321A1S ta Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Tentative Fast Switching Dual Darlington Transistor Module 150 Amperes/125 Volts Description Q U U tIC M A ftlK « T • «TH Q — ^	OCR Scan	KD321A1S Amperes/125 KD321A15 321A15 k0321 powerex kd kd32	PDF
2SA1495 Abstract: No abstract text available Text: Power Transistors 2SA1495 2 S A 1495 Silicon P N P Epitaxial Planar Type P a c k a g e D im e n s io n s H igh S p ee d S w itc h in g Unit I mm • F e a tu re s • High DC cu rren t gain • High speed switching Iif e • High collector-base voltage	OCR Scan	2SA1495 2SB1172/A) 2SA1495	PDF
BC160 Abstract: bc 160 BC161 TFK BC TFK 175 TFK 236 bc 141 Text: ip ^ B C 160- BC 161 Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: NF-Verstärker und Schalter Applications: AF am plifiers and switches Besondere Merkmale: Features: • Verlustleistung 3,2 W • Power dissipation 3.2 W	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: 7294621 m POWEREX u a m INC “ DEI 7514^51 DD0SD3b x Powerex, Inc., Hlllls Street, ibungwood, Pennsylvania 15697 412 925-7272 fl D "T ^ S ^ Z y KT234520 Split-Dual Bipolar Transistor Module 200 Amperes/600 Volts Description o u t liv e m m ìn g Powerex Split-Dual Bipolar Transistor	OCR Scan	KT234520 Amperes/600	PDF
bc1417 Abstract: BC140-BC141 BC 545 bc 141 bc140 tfk 545 bc 140 BC140B BC141 S45C Text: Silizium- NPN-Epitaxial-Planar-NF-T ransistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Verstärker und Schalter A p p lic a tio n s : AF am plifiers and sw itches Besondere Merkmale: F eatures: • Verlustleistung 3,7 W • Power dissipation 3,7 W	OCR Scan		PDF
BF 234 transistor Abstract: transistor KSC2786 RF POWER TRANSISTOR 100MHz samsung tv Text: Inc SAMSUNG SEMICONDUCTOR KSC2786 i*e ° aoofibM q \| ~ r - jj~ fy NPN EPITAXIAL SILICON TRANSISTOR a • r TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Cumnt-CMIn-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz	OCR Scan	KSC2786 600MHz -22dB 100MHz O-92S KSC2786 100MHz T-31-17 BF 234 transistor transistor RF POWER TRANSISTOR 100MHz samsung tv	PDF

Transistor BFT 99 Abstract: BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44 Text: asc D fi23SbOS QGG4713 S mSIZG ; • T -H 'H NPN Silicon RF Broadband Transistor BFT 75 - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 236 plastic package 23 A 3 DIN 41869 , intended for use in low-noise input and intermediate stages in RF	OCR Scan	Q0G4713 Q62702-F513 051i0 Transistor BFT 99 BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S B798 is designed fo r audio frequency pow er a m p lifie r a pp lica tion, especially in H y b rid Integrated C ircuits. FEATURES PACKAGE DIMENSIONS	OCR Scan	2SB798 2SB798 2SD999 Bas36	PDF
bdx88b Abstract: No abstract text available Text: 7=12=5237 0 0 2 6 4 7 R H • I •'SVZ-^ SGS-THOMSON BDX87/87A/87B/87C BDX88/88A/88B/88C S G S-THOMSON 3D E D POWER DARLINGTONS DESC RIPTIO N The BDX87, BDX87A, BDX87B and BDX87C are Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are moun	OCR Scan	BDX87/87A/87B/87C BDX88/88A/88B/88C BDX87, BDX87A, BDX87B BDX87C BDX88, BDX88A, BDX88B BDX88C	PDF
transistor tt 2222 Abstract: philips resistor 2322-153 TT 2222 BLF177 TRIMMER cap no-2222 809 07015 71005 philips resistor 2322 Text: Philips Components blr77 _ A _ DEVELOPMENT DATA This data s h e e t co n ta in s advance in fo rm a tio n and sp e c ific a tio n s w h ic h are s u b je c t to change w ith o u t n o tic e . RF POWER MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor intended fo r use in professional transmitters	OCR Scan	OT-121 transistor tt 2222 philips resistor 2322-153 TT 2222 BLF177 TRIMMER cap no-2222 809 07015 71005 philips resistor 2322	PDF
C 548 B Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548 Text: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and	OCR Scan	Q62702-C687 Q62702-C687-V3 Q62702-C687-V1 Q62702-C687-V2 Q62702-C688 Q62702-C688-V3 Q62702-C688-V1 Q62702-C688-V2 Q6270 200Hz C 548 B B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548	PDF
2SB232 Abstract: No abstract text available Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	Tc-25 7C-25T 2SB232	PDF
transistor TT 3043 Abstract: tt 3043 al 336 D67FP5 IC TT 3043 d67fp6 aj204 D67FP D67FP7 638ak Text: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS D67FP5,6,7 500-700 VOLTS 100 AMP, 312.5 WATTS The D67FP is a high voltage NPN high current power darlington especially designed for use in PWM applications where fast and efficient switching is required. This device	OCR Scan	D67FP5 D67FP D67FP6 D67FP7 transistor TT 3043 tt 3043 al 336 IC TT 3043 d67fp6 aj204 638ak	PDF
amplificateur Abstract: vertical tv deflexion BD233 bo236 BD NPN transistors bd 233 bd 237 Text: NPN SILICON TRANSISTORS, E P IT A X IA L BASE BD 233 TRANSISTORS SILICIUM NPN, BASE EPITAXIEE gg 2 .3 5 BD 237 Compl. o f BD 234, BO 236, BD 238 P R E LIM IN A R Y D A T A NOTICE PRELIMINAIRE These transistors are intended fo r complemen ta ry or quasi complementary sym etry amplifiers :	OCR Scan		PDF
transistor z5t Abstract: 1S697 KT521K03 300 volt 5 ampere transistor a 31 transistor k 4213 TI-125K 1251C Text: 7 2 9 4 6 2 m N 1' P O W ER E X I NC T f l D e \| 7 2 ^ 5 1 C O D E 3 7 7 E X _ E R Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 ) 1 \| “ T ^ 3 3 ~ 3 5 “ d KT521K03 S p U t - D U d l D a r lin g t O F I Transistor Module	OCR Scan	DO02377 KT521K03 Amperes/1000 KT521K03 345710s 3457i0 transistor z5t 1S697 300 volt 5 ampere transistor a 31 transistor k 4213 TI-125K 1251C	PDF
KE724503 Abstract: 748 transistor on LC20A KE7245 Text: 31E D POWEREX INC m M B Œ • TS^MbEl OOOMMlfl-T M P R X KE7245Ó3 X Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Six-Darlington Transistor Module	OCR Scan	KE7245 Amperes/600 BP107, KE724503 748 transistor on LC20A	PDF

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TIC 236 TRANSISTOR Search Results

TIC 236 TRANSISTOR Result Highlights (5)

TIC 236 TRANSISTOR Datasheets Context Search

N6055

m2n7000

65e7

transistor BC 236

transistor Bs 998

F587

TA2765

BC327

321A15

2SA1495

BC160

Untitled

bc1417

BF 234 transistor

Transistor BFT 99

Untitled

bdx88b

transistor tt 2222

C 548 B

2SB232

transistor TT 3043

amplificateur

transistor z5t

KE724503