TIM1414-4 |
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Internally Matched Power GaAs FET (X, Ku-Band) |
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TIM1414-4 |
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TIM1414 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-9D1B, 3 PIN, FET RF Power |
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TIM1414-4 |
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IC FET MISC 3(2-9D1B) |
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TIM1414-4-252 |
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Toshiba
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X and Ku-Band Power GaAs IMFETS; Frequency Band (GHz): 13.75-14.5; P1dB (dBm): 36; G1dB (dB): 5.5; Ids (A) Typ.: 1.7; Package Type: 2.9; Rth (°C/W) Typ.: 2-9D1B |
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TIM1414-4-252 |
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Toshiba
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Microwave Power GaAs FET |
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TIM1414-4-252 |
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FET, Microwave Power GaAs FET Transistor, ID 5.2 A |
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TIM1414-4A |
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FET, Microwave Power GaAs FET Transistor, ID 5.2 A |
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TIM1414-4L |
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Toshiba
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MICROWAVE POWER GaAs FET |
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TIM1414-4LA |
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FET, Microwave Power Gaas FET |
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TIM1414-4LA |
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Toshiba
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TIM1414 - TRANSISTOR KU BAND, Si, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power |
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TIM1414-4LA-371 |
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Toshiba
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MICROWAVE POWER GaAs FET |
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TIM1414-4UL |
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Toshiba
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TIM1414 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power |
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