TIP514
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification TIP514 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For use in high-frequency drivers In aduio amplifiers PINNING See Fig.2
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TIP514
-150V;
TIP514
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Untitled
Abstract: No abstract text available
Text: TIP516S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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TIP516S
O204AA)
18-Jun-02
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TIP516S
Abstract: No abstract text available
Text: TIP516S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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TIP516S
O204AA)
31-Jul-02
TIP516S
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Untitled
Abstract: No abstract text available
Text: TIP519 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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TIP519
O204AA)
16-Jul-02
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Untitled
Abstract: No abstract text available
Text: , U na. C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TIP514 DESCRIPTION • Continuous Collector Current-lc= -5A • Collector-Emitter Breakdown Voltage:V(BR)CEo=-150V(Min.)
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TIP514
-150V
1001C
-30mA;
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Untitled
Abstract: No abstract text available
Text: TIP514 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0mx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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TIP514
Freq40M
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TIP519
Abstract: No abstract text available
Text: TIP519 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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TIP519
O204AA)
31-Jul-02
TIP519
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Untitled
Abstract: No abstract text available
Text: TIP519 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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TIP519
O204AA)
18-Jun-02
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Untitled
Abstract: No abstract text available
Text: TIP516S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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TIP516S
O204AA)
16-Jul-02
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B0244A
Abstract: 2SB531-0 B0296 2sc3659 B0196
Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 5 A, B0956 SOT3309 SOT3309 SOT3309 SOT3329 SOT3329 SOT3329 B05400 BLX48 BLX48 BLX48 B0956F BOX30 TIP513 TIP513 TIP513 TIP514 SFT501 (A) 2SB506A SFT503 (A) +:~~~~ 25 30 TIP523 TIP524 2SC2613 2SC2816
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B0956
OT3309
OT3329
B05400
BLX48
B0244A
2SB531-0
B0296
2sc3659
B0196
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Untitled
Abstract: No abstract text available
Text: Preliminary User’s Manual V850ES/JF3-L 32-bit Single-Chip Microcontrollers Hardware PD70F3735 μPD70F3736 Document No. U18952EJ1V0UD00 1st edition Date Published February 2008 N 2008 Printed in Japan [MEMO] 2 Preliminary User’s Manual U18952EJ1V0UD
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V850ES/JF3-L
32-bit
PD70F3735
PD70F3736
U18952EJ1V0UD00
U18952EJ1V0UD
G0706
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TIP-52
Abstract: No abstract text available
Text: TTSTSa? 005=1555 1 • SGS-THOMSON M œ m i O T « § TIP51/TIP52 _TIP53/TIP54 S G 30E S -T HOMSON D HIGH VOLTAGE POWER SWITCH DESCRIPTIO N The TIP51, TIP52, TIP53 and TIP$4 are silicon multiepitaxial mesa NPN transistors in SOT-93 plastic package. They are intended for high voltage, fast switching in
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TIP51/TIP52
TIP53/TIP54
TIP51,
TIP52,
TIP53
OT-93
TIP-52
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TIP-54
Abstract: TIP51 TIP54
Text: TYPES TIP51 THRU TIP54 N-P-N SILICON POWER TRANSISTORS • 100 mJ Reverse-Energy Rating • 250 V to 400 V Min V b r CEO • 100 W at 25°C Case Temperature • 5 A Peak Collector Current • 2.5 MHz Min f j at 10 V , 0.2 A TYPES TÏP51, TIP52, TIP53. TIP54
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TIP51
TIP54
TIP52,
TIP53.
TIP51
TIP-54
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tip5t
Abstract: TlP517 TIP618 TLP515 TIPS16 TIP515 TIP516 TIP517 TIP518
Text: TYPES TIP515 THRU TIP518 N P-N SILICON POWER TRANSISTORS FOR P O W E R -A M P LIF IE R A N D H IG H -SP EED -SW IT C H IN G A P P L IC A T IO N S 120 V and 150 V Min V B R C E O 12-A Rated Continuous Collector Current 80 Watts at 100°C Case Temperature
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TIP515
TIP518
TIP616
TIP516
TIP518
TIP516
TIP517
tip5t
TlP517
TIP618
TLP515
TIPS16
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TIP51
Abstract: TIP54 TIP-52 TIP-53 TIP52 TIP53 TIP-54 TIP5 1N914 2N6127
Text: TE X A S INSTR {OPTO} bS DE l ö T b l T B h □□3bfl3Q 62C 36830 6 9 6 1 7 2 6 TEXAS INSTR OPTO TIP51, TIP52, TIP53, TIP54 N-P-N SILICON POWER TRANSISTORS T - 3J R E V IS E D O C T O B E R 1 9 8 4 • 100 W at 25 °C Case Temperature • 3 A Continuous Collector Current
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TIP51,
TIP52,
TIP53,
TIP54
O-218
TIP52
TIP500
TIP51
TIP-52
TIP-53
TIP53
TIP-54
TIP5
1N914
2N6127
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TIP512
Abstract: TLP509 TIP509 TIP510 TIP511
Text: T YP ES TIP509 THRU TIP512 N-P-N SILICO N POWER TRANSISTORS FOR P O W ER -A M PLIFIE R A N D H IG H -S PEED -SW ITC H IN G A P PLIC A TIO N S 120 V and 150 V Min V B R C E O 4-A Rated Continuous Collector Current 30 Watts at 100° C Case Temperature M in f j of 70 M H z at 5 V , 0.5 A
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TIP509
TIP512
TIP510
TLP509
TIP510
TIP511
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TIP509
Abstract: tip510 TIP512
Text: TYPES TIP509 THRU TIP512 N-P-N SILICON POWER TRANSISTORS TYPES TIP509 THRU TIP512 BULLETIN NO. DL-S7111620, DECEMBER FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 120 V and 150 V Min V BR CEO 4-A Rated Continuous Collector Current 30 Watts at 100° C Case Temperature
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TIP509
TIP512
TIPS09
TIP510
DL-S7111620,
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TIP513
Abstract: No abstract text available
Text: TYPES TIP513, TIP514 P-N-P SILICON POWER TRANSISTORS TYPES TIP513, TIP514 BULLETIN NO. DL-S 7111615, DECEMBER FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS • 150 V Min V BR CEO • 5-A Rated Continuous Collector Current • 30 Watts at 100°C Case Temperature (TIP513)
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TIP513,
TIP514
TIP513
TIP513)
TIP514)
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VCE-150
Abstract: TIP513 TIP514 2J27
Text: TYPES TIP513, TIP514 P-N-P SILICON POWER TRANSISTORS FOR P O W E R -A M P LIF IE R A N D H IG H -SPEED -SW IT C H IN G A P P L IC A T IO N S • 150 V Min V B R C E O • 5-A Rated Continuous Collector Current • 30 Watts at 100°C Case Temperature (TIP513)
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TIP513,
TIP514
TIP513)
TIP514)
TIP513
VCE-150
2J27
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TIP54
Abstract: TIP51 TIP52 TIP-52 TIP-54 e40V TIP53 switching ic 5 Amper
Text: ¿2&M0SPEC HIGH VOLTAGE NPN SILICON POWER TRANSISTORS NPN TIP51 TIP52 TIP53 TIP54 . designed for line operated audio output amplifier, and switching power supply drivers applications. FEATURES: * Collector-Emitter Sustaining Voltage -250-400V Min *3A R ated Collector Current
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-250-400V
200mA
TIP51
TIP52
TIP53
TIP54
-TIP51-TIP52
TIP54
TIP-52
TIP-54
e40V
switching ic 5 Amper
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TIP-52
Abstract: tip51 tip54 TIP52
Text: TEXAS INSTR -C0PT03- Ô 961726 i. ' t * TEXAS bE IN S T R DE B ô T t i l T B h □□3bfl3D 62C 3 6 8 3 0 O P T O TIP51, TIP52, TIP53, TIP54 N-P-N SILICON POWER TRANSISTORS T - *• R E V IS E D O C T O B E R 1 9 8 4 • 1 0 0 W at 2 5 ° C Case Tem perature
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-C0PT03-
TIP51,
TIP52,
TIP53,
TIP54
TIP-52
tip51
TIP52
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TIP-561
Abstract: TIP512 tip561 tip558 n538 TIP55 TIP622 TIP5 TIP511 TIP-555
Text: i Metal Can Power Case Outlines High Reliability P ro fe ssio n i Types continued Device Type ' Polarity Outline Continuous Ic A TIP554 TIP555 TIP556 2N5938 TIP509 TIP511 TIP610 T1P512 2N4913 2N4914 TIP620 TIP625 2N2880 2N5385 2N3996 2N3997 2N3998 2N3999
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TC-25-C
TC-100
TIP554
TIP555
TIP656
2N5938
TIP609
TIP511
TIP512
2N4913
TIP-561
tip561
tip558
n538
TIP55
TIP622
TIP5
TIP-555
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TIP515
Abstract: No abstract text available
Text: TYPES TIP515 THRU TIP518 N-P-N SILICON POWER TRANSISTORS • 120 V and 150 V Min V BR CEO • 12-A Rated Continuous Collector Current • 80 Watts at 100°C Case Temperature • Min f j of 70 MHz at 5 V, 1 A TYPES TIP515 THRU TIP518 BULLETIN NO. DL-S 7111603, DECEMBER
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TIP515
TIP518
TIP516
TIP517
TIP518
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TIP519
Abstract: No abstract text available
Text: TYPES TIP519, TIP520 P-N-P SILICON POWER TRANSISTORS CD H FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS C < r *o r m m w 150 V Min V BR CEO -M 8-A Rated Continuous Collector Current ll o 50 Watts at 100°C Case Temperature od r- -o Min fy of 40 MHz at 5 V , 1 A
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TIP519,
TIP520
TIP519
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