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    TK10A Price and Stock

    Toshiba America Electronic Components TK10A50W,S5X

    X35 PB-F POWER MOSFET TRANSISTOR
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    DigiKey TK10A50W,S5X Tube 118 1
    • 1 $2.58
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    • 1000 $0.84543
    • 10000 $0.775
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    Mouser Electronics TK10A50W,S5X
    • 1 $2.44
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    • 100 $1.1
    • 1000 $0.785
    • 10000 $0.775
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    Toshiba America Electronic Components TK10A80W,S4X

    MOSFET N-CH 800V 9.5A TO220SIS
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    DigiKey TK10A80W,S4X Tube 49 1
    • 1 $3.71
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    Mouser Electronics TK10A80W,S4X 83
    • 1 $3.43
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    Toshiba America Electronic Components TK10A60W5,S5VX

    MOSFET N-CH 600V 9.7A TO220SIS
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    DigiKey TK10A60W5,S5VX Tube 48 1
    • 1 $2.7
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    • 1000 $0.89157
    • 10000 $0.825
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    Mouser Electronics TK10A60W5,S5VX 187
    • 1 $2.65
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    • 100 $1.23
    • 1000 $0.825
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    Toshiba America Electronic Components TK10A60W,S4VX

    MOSFET N-CH 600V 9.7A TO220SIS
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    DigiKey TK10A60W,S4VX Tube 28 1
    • 1 $3.66
    • 10 $3.66
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    • 1000 $1.27284
    • 10000 $1.25
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    Mouser Electronics TK10A60W,S4VX 64
    • 1 $2.91
    • 10 $2.37
    • 100 $1.44
    • 1000 $1.25
    • 10000 $1.25
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    Toshiba America Electronic Components TK10A80E,S4X

    MOSFET N-CH 800V 10A TO220SIS
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    DigiKey TK10A80E,S4X Tube 1
    • 1 $3.05
    • 10 $3.05
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    • 1000 $1.02818
    • 10000 $0.975
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    Mouser Electronics TK10A80E,S4X 179
    • 1 $3.12
    • 10 $3.12
    • 100 $1.41
    • 1000 $0.975
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    Find more TK10A price and stock on Findchips.com

    TK10A Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK10A50D Toshiba Japanese - Transistors - Mosfets Original PDF
    TK10A50D Toshiba Transistors - Mosfets Original PDF
    TK10A50D(STA4,Q,M) Toshiba TK10A50D - Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK10A50W,S5X Toshiba America Electronic Components X35 PB-F POWER MOSFET TRANSISTOR Original PDF
    TK10A55D(STA4,Q,M) Toshiba TK10A55D - Trans MOSFET N-CH 550V 10A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK10A60D Toshiba Japanese - Transistors - Mosfets Original PDF
    TK10A60D Toshiba Transistors - Mosfets Original PDF
    TK10A60D(Q) Toshiba TK10A60D - Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK10A60D(Q,M) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A TO220SIS Original PDF
    TK10A60D(STA4,Q,M) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A TO220SIS Original PDF
    TK10A60E,S4X Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V TO220SIS Original PDF
    TK10A60E,S5X Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V TO220SIS Original PDF
    TK10A60W Toshiba TK10A60 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF
    TK10A60W Toshiba Japanese - Transistors - Mosfets Original PDF
    TK10A60W Toshiba Transistors - Mosfets Original PDF
    TK10A60W,S4X Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N CH 600V 9.7A TO-220 Original PDF
    TK10A60W5,S5VX Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 9.7A TO-220SIS Original PDF
    TK10A60W,S4VX Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 9.7A TO-220SIS Original PDF
    TK10A80E,S4X Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V TO220SIS Original PDF
    TK10A80W,S4X Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 9.5A TO220SIS Original PDF

    TK10A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K10A50D

    Abstract: K10A50 TK10A50D VDD400 K*A50D toshiba K10A50D
    Text: TK10A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK10A50D ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.62 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 5.0 S (標準)


    Original     		TK10A50D SC-67 2-10U1B 20070701-JA K10A50D K10A50 TK10A50D VDD400 K*A50D toshiba K10A50D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK10A60W5 MOSFETs Silicon N-Channel MOS DTMOS TK10A60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 85 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS


    Original     		TK10A60W5 O-220SIS PDF

    k10a60d

    Abstract: No abstract text available
    Text: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK10A60D k10a60d PDF

    k10a60d

    Abstract: toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d
    Text: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.) High forward transfer admittance: |Yfs| = 6.0S (typ.)


    Original     		TK10A60D k10a60d toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d PDF

    TK10A60D5

    Abstract: TK10A60D
    Text: TK10A60D5 MOSFETs Silicon N-Channel MOS π-MOS TK10A60D5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.8 Ω (typ.)


    Original     		TK10A60D5 O-220SIS TK10A60D5 TK10A60D PDF

    TK10A60D5

    Abstract: 600VTH TK10A60D
    Text: TK10A60D5 MOSFET シリコンNチャネルMOS形 π-MOS TK10A60D5 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) 逆回復時間が早い。: trrf = 50 ns (標準), trr = 90 ns (標準) (2) オン抵抗が低い。: RDS(ON) = 0.8 Ω (標準)


    Original     		TK10A60D5 O-220SIS SC-67 2-10U1S TK10A60D5 600VTH TK10A60D PDF

    K10A50D

    Abstract: K10A50 TK10A50D K*A50D
    Text: TK10A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK10A50D ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.62 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 5.0 S (標準)


    Original     		TK10A50D SC-67 2-10U1B K10A50D K10A50 TK10A50D K*A50D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK10A80E MOSFETs Silicon N-Channel MOS π-MOS TK10A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)


    Original     		TK10A80E O-220SIS PDF

    k10a60d

    Abstract: K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D
    Text: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK10A60D k10a60d K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK10A60W MOSFETs Silicon N-Channel MOS DTMOS TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)


    Original     		TK10A60W O-220SIS PDF

    k10a60d

    Abstract: TK10A60D K10A60 VDD400 equivalent for k10a60d k10a IAR10
    Text: TK10A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ TK10A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.58 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original     		TK10A60D SC-67 2-10U1B k10a60d TK10A60D K10A60 VDD400 equivalent for k10a60d k10a IAR10 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK10A60W MOSFET シリコンNチャネルMOS形 DTMOS TK10A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.327 Ω (標準) (2)


    Original     		TK10A60W O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK10A80E MOSFETs Silicon N-Channel MOS π-MOS TK10A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)


    Original     		TK10A80E O-220SIS PDF

    K10A60

    Abstract: k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200
    Text: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK10A60D K10A60 k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200 PDF

    k10a60d

    Abstract: No abstract text available
    Text: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK10A60D k10a60d PDF

    toshiba K10A50D

    Abstract: k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a
    Text: TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		TK10A50D toshiba K10A50D k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a PDF

    k10a60d

    Abstract: K10A60 tk10a60d VDD400 equivalent for k10a60d MJ500
    Text: TK10A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ TK10A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.62 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original     		TK10A60D SC-67 2-10U1B 20070701-JA k10a60d K10A60 tk10a60d VDD400 equivalent for k10a60d MJ500 PDF

    K10A5

    Abstract: K10A55D
    Text: TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		TK10A55D K10A5 K10A55D PDF

    TK10A60E

    Abstract: tk10a60
    Text: TK10A60E MOSFETs Silicon N-Channel MOS π-MOS TK10A60E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (3)


    Original     		TK10A60E O-220SIS TK10A60E tk10a60 PDF

    k10a50d

    Abstract: No abstract text available
    Text: TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		TK10A50D k10a50d PDF

    K10A50

    Abstract: K10A50D toshiba marking code transistor k10a50d
    Text: TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		TK10A50D K10A50 K10A50D toshiba marking code transistor k10a50d PDF

    Untitled

    Abstract: No abstract text available
    Text: TK10A60W MOSFETs Silicon N-Channel MOS DTMOS TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		TK10A60W O-220SIS PDF

    K10A50

    Abstract: K10A50D toshiba K10A50D toshiba marking code transistor k10a50d K*A50D TK10A50D k10a50d data transistor K10a50d k10a *K10A50D
    Text: TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		TK10A50D K10A50 K10A50D toshiba K10A50D toshiba marking code transistor k10a50d K*A50D TK10A50D k10a50d data transistor K10a50d k10a *K10A50D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		TK10A55D PDF