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    TK6A Price and Stock

    Toshiba America Electronic Components TK6A80E,S4X

    MOSFET N-CH 800V 6A TO220SIS
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    DigiKey TK6A80E,S4X Tube 50 1
    • 1 $2.55
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    Mouser Electronics TK6A80E,S4X 245
    • 1 $2.55
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    • 100 $1.15
    • 1000 $0.775
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    Toshiba America Electronic Components TK6A60W,S4VX

    MOSFET N-CH 600V 6.2A TO220SIS
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    DigiKey TK6A60W,S4VX Tube 40 1
    • 1 $2.9
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    Mouser Electronics TK6A60W,S4VX 145
    • 1 $2.36
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    Verical TK6A60W,S4VX 30 7
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    Arrow Electronics TK6A60W,S4VX 30 1
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    Toshiba America Electronic Components TK6A50D(STA4,Q,M)

    MOSFET N-CH 500V 6A TO220SIS
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    DigiKey TK6A50D(STA4,Q,M) Tube 30 1
    • 1 $1.86
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    Mouser Electronics TK6A50D(STA4,Q,M)
    • 1 $1.75
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    • 100 $0.721
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    TME TK6A50D(STA4,Q,M) 1
    • 1 $0.735
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    EBV Elektronik TK6A50D(STA4,Q,M) 19 Weeks 50
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    Toshiba America Electronic Components TK6A45DA(STA4,Q,M)

    MOSFET N-CH 450V 5.5A TO220SIS
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    DigiKey TK6A45DA(STA4,Q,M) Tube 25 1
    • 1 $1.74
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    Mouser Electronics TK6A45DA(STA4,Q,M)
    • 1 $1.55
    • 10 $1.44
    • 100 $0.67
    • 1000 $0.474
    • 10000 $0.452
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    Toshiba America Electronic Components TK6A65D(STA4,Q,M)

    MOSFET N-CH 650V 6A TO220SIS
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    DigiKey TK6A65D(STA4,Q,M) Tube 20 1
    • 1 $2.6
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    Mouser Electronics TK6A65D(STA4,Q,M) 397
    • 1 $2.34
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    • 100 $1.18
    • 1000 $0.783
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    Verical TK6A65D(STA4,Q,M) 50 15
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    TME TK6A65D(STA4,Q,M) 463 1
    • 1 $1.06
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    Chip1Stop TK6A65D(STA4,Q,M) Tube 50
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    EBV Elektronik TK6A65D(STA4,Q,M) 34,850 19 Weeks 50
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    New Advantage Corporation TK6A65D(STA4,Q,M) 28,350 1
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    Find more TK6A price and stock on Findchips.com

    TK6A Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK6A Topstek Topstek Current Transducer Original PDF
    TK6A45DA Toshiba Japanese - Transistors - Mosfets Original PDF
    TK6A45DA Toshiba Transistors - Mosfets Original PDF
    TK6A45DA(STA4,Q,M) Toshiba TK6A45DA - Trans MOSFET N-CH 450V 5.5A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK6A50D Toshiba Japanese - Transistors - Mosfets Original PDF
    TK6A50D Toshiba Transistors - Mosfets Original PDF
    TK6A50D(STA4,Q,M) Toshiba TK6A50D - Trans MOSFET N-CH 500V 6A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK6A53D Toshiba Transistors - Mosfets Original PDF
    TK6A53D Toshiba Japanese - Transistors - Mosfets Original PDF
    TK6A53D(STA4,Q,M) Toshiba TK6A53D - Trans MOSFET N-CH 525V 6A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK6A55DA(STA4,Q,M) Toshiba TK6A55DA - Trans MOSFET N-CH 550V 5.5A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK6A60D Toshiba Transistors - Mosfets Original PDF
    TK6A60D Toshiba Japanese - Transistors - Mosfets Original PDF
    TK6A60D(Q) Toshiba TK6A60D - Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK6A60D(Q,M) Toshiba TK6A60D - Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK6A60D(STA4,Q,M) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 6A TO220SIS Original PDF
    TK6A60W Toshiba TK6A60W - Nch 500V Original PDF
    TK6A60W,S4VX Toshiba TK6A60 - Power MOSFET - Nch 500V VDSS 700V Original PDF
    TK6A65D Toshiba Japanese - Transistors - Mosfets Original PDF
    TK6A65D Toshiba Transistors - Mosfets Original PDF

    TK6A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K6A53D

    Abstract: TK6A53D
    Text: TK6A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK6A53D ○ スイッチングレギュレータ用 : Vth = 2.4～4.4 V (VDS = 10 V, ID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 2.54 記号 定格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧


    Original     		TK6A53D K6A53D TK6A53D PDF

    K6A65D

    Abstract: TK6A65D k6a65 TK6A
    Text: TK6A65D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK6A65D 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.95 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0 S (標準)


    Original     		TK6A65D SC-67 2-10U1B K6A65D TK6A65D k6a65 TK6A PDF

    K6A60D

    Abstract: K6A60 TK6A60D
    Text: TK6A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK6A60D ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 3.0 S (標準)


    Original     		TK6A60D K6A60D K6A60 TK6A60D PDF

    K6A65D

    Abstract: tk6a65d tk6a65d equivalent k6a65 K6A65D data TK6A K6A6
    Text: TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ =4.0 S (typ.)


    Original     		TK6A65D K6A65D tk6a65d tk6a65d equivalent k6a65 K6A65D data TK6A K6A6 PDF

    k6a60d

    Abstract: No abstract text available
    Text: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK6A60D k6a60d PDF

    Untitled

    Abstract: No abstract text available
    Text: TK6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.25 (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		TK6A55DA PDF

    K6A50D

    Abstract: K*A50D TK6A50D
    Text: TK6A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK6A50D スイッチングレギュレータ用 単位: mm : IDSS = 10 A (最大) 漏れ電流が低い。 A 3.9 3.0 : |Yfs| = 2.5 S (標準) 順方向伝達アドミタンスが高い。


    Original     		TK6A50D K6A50D K*A50D TK6A50D PDF

    K6A53D

    Abstract: TK6A53D
    Text: TK6A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK6A53D ○ スイッチングレギュレータ用 : Vth = 2.4～4.4 V (VDS = 10 V, ID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 2.54 記号 定格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧


    Original     		TK6A53D K6A53D TK6A53D PDF

    K6A65D

    Abstract: tk6a65d k6a65
    Text: TK6A65D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK6A65D 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.95 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0 S (標準)


    Original     		TK6A65D SC-67 2-10U1B K6A65D tk6a65d k6a65 PDF

    K6A65D

    Abstract: k6a65
    Text: TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK6A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)


    Original     		TK6A65D 28mitation, K6A65D k6a65 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


    Original     		TK6A53D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK6A80E MOSFETs Silicon N-Channel MOS π-MOS TK6A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.6 mA)


    Original     		TK6A80E O-220SIS PDF

    K6A55DA

    Abstract: TK6A55DA
    Text: TK6A55DA 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK6A55DA ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 3.2 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 550 V)


    Original     		TK6A55DA K6A55DA TK6A55DA PDF

    K6A53D

    Abstract: TK6A53D
    Text: TK6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


    Original     		TK6A53D K6A53D TK6A53D PDF

    K6A60D

    Abstract: No abstract text available
    Text: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)


    Original     		TK6A60D K6A60D PDF

    K6A55DA

    Abstract: No abstract text available
    Text: TK6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.25 Ω (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		TK6A55DA K6A55DA PDF

    k6a60d

    Abstract: TK6A60D K6A60
    Text: TK6A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK6A60D ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 3.0 S (標準)


    Original     		TK6A60D SC-67 2-10U1B 20070701-JA k6a60d TK6A60D K6A60 PDF

    K6A50D

    Abstract: TK6A50D
    Text: TK6A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK6A50D スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.2 Ω (標準) : IDSS = 10 A (最大) 漏れ電流が低い。 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2


    Original     		TK6A50D K6A50D TK6A50D PDF

    K6A60D

    Abstract: K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2
    Text: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)


    Original     		TK6A60D K6A60D K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2 PDF

    TK6A50D

    Abstract: k6a50d K6A5 TK6A K6a50
    Text: TK6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A50D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		TK6A50D TK6A50D k6a50d K6A5 TK6A K6a50 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK6A45DA MOSFETs Silicon N-Channel MOS π-MOS TK6A45DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.1 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 3.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V)


    Original     		TK6A45DA O-220SIS PDF

    K6A53D

    Abstract: K6A5 TK6A53D
    Text: TK6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


    Original     		TK6A53D K6A53D K6A5 TK6A53D PDF

    K6A50D

    Abstract: TK6A TK6A50D K*A50D
    Text: TK6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A50D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		TK6A50D K6A50D TK6A TK6A50D K*A50D PDF

    K6A55DA

    Abstract: VDD200 TK6A55DA
    Text: TK6A55DA 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK6A55DA ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 3.2 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 550 V)


    Original     		TK6A55DA K6A55DA VDD200 TK6A55DA PDF