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    TK6A80E Search Results

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    TK6A80E Price and Stock

    Toshiba America Electronic Components TK6A80E,S4X

    MOSFET N-CH 800V 6A TO220SIS
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    DigiKey TK6A80E,S4X Tube 50 1
    • 1 $2.55
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    • 100 $2.55
    • 1000 $0.83499
    • 10000 $0.76375
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    Mouser Electronics TK6A80E,S4X 245
    • 1 $2.55
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    • 100 $1.15
    • 1000 $0.775
    • 10000 $0.763
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    Toshiba America Electronic Components TK6A80E

    Trans MOSFET N-CH 800V 6A 3-Pin TO-220SIS - Rail/Tube (Alt: TK6A80E,S4X)
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    Avnet Americas TK6A80E Tube 16 Weeks 50
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    • 100 $0.91039
    • 1000 $0.82485
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    ComSIT USA TK6A80E 250
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    Win Source Electronics TK6A80E 68,033
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    Toshiba America Electronic Components TK6A80E,S4X(S

    Trans MOSFET N-CH Si 800V 6A
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    Verical TK6A80E,S4X(S 47 47
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    • 100 $1.6036
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    Newark TK6A80E,S4X(S Bulk 47 1
    • 1 $2.03
    • 10 $1.75
    • 100 $1.44
    • 1000 $1.22
    • 10000 $0.992
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    TME TK6A80E,S4X(S 142 1
    • 1 $1.68
    • 10 $1.33
    • 100 $1.2
    • 1000 $1.11
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    Chip1Stop TK6A80E,S4X(S Bulk 3
    • 1 $1.01
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    EBV Elektronik TK6A80E,S4X(S 19 Weeks 50
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    TK6A80E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK6A80E,S4X Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V TO220SIS Original PDF

    TK6A80E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TK6A80E MOSFETs Silicon N-Channel MOS π-MOS TK6A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.6 mA)


    Original     		TK6A80E O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK6A80E MOSFETs Silicon N-Channel MOS π-MOS TK6A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.6 mA)


    Original     		TK6A80E O-220SIS PDF

    gt50jr22

    Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
    Text: System Catalog May 2014 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g –2 Types and Applications of Switching Power Supplies Types of DC-DC converters embedded in various


    Original     		SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W PDF