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    TL261 Search Results

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    TL261 Price and Stock

    OTTO Engineering Inc HTL2-612111AA12

    Joysticks Hall Effect Finger Joystick Switch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HTL2-612111AA12
    • 1 $95.55
    • 10 $87.7
    • 100 $68.07
    • 1000 $68.07
    • 10000 $68.07
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    Sager HTL2-612111AA12 3
    • 1 -
    • 10 $79.77
    • 100 $67.78
    • 1000 $59.42
    • 10000 $59.42
    		Buy Now

    OTTO Engineering Inc HTL2-612111AA32

    Joysticks EXT SMOOTH BOOT, 2.5+/-2.0VDC NONE,
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HTL2-612111AA32
    • 1 $95.55
    • 10 $87.7
    • 100 $68.07
    • 1000 $68.07
    • 10000 $68.07
    		Get Quote
    Sager HTL2-612111AA32 3
    • 1 -
    • 10 $79.77
    • 100 $67.78
    • 1000 $59.42
    • 10000 $59.42
    		Buy Now

    OTTO Engineering Inc HTL2-612111AA22

    Joysticks Hall Effect Finger Joystick Switch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HTL2-612111AA22
    • 1 $97.12
    • 10 $89.14
    • 100 $69.18
    • 1000 $69.18
    • 10000 $69.18
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    Sager HTL2-612111AA22 3
    • 1 -
    • 10 $81.08
    • 100 $68.89
    • 1000 $60.39
    • 10000 $60.39
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    OTTO Engineering Inc HTL2-612111GG12

    Joysticks EXT SM BOOT, IP68 2.5+/-2.0VDC NONE,
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HTL2-612111GG12
    • 1 $115.14
    • 10 $105.68
    • 100 $91.49
    • 1000 $91.49
    • 10000 $91.49
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    Sager HTL2-612111GG12 3
    • 1 -
    • 10 $96.12
    • 100 $79.46
    • 1000 $71.58
    • 10000 $71.58
    		Buy Now

    OTTO Engineering Inc HTL2-611111CC12

    Joysticks EXT SMOOTH BOOT, 2.5+/-2.0VDC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HTL2-611111CC12
    • 1 $119.05
    • 10 $109.26
    • 100 $94.59
    • 1000 $94.59
    • 10000 $94.59
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    Sager HTL2-611111CC12 3
    • 1 -
    • 10 $99.38
    • 100 $82.16
    • 1000 $74.03
    • 10000 $74.03
    		Buy Now
    Find more TL261 price and stock on Findchips.com

    TL261 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 PDF

    TL145

    Abstract: TL245 transistor c111 C216 TL152
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152 PDF

    transistor c124

    Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 transistor c124 TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300 PDF

    PTFB093608

    Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PTFB093608FV PTFB093608FV H-37275-6/2 PTFB093608 tl2272 ptfb09360 TL258 TL103 application note tl131 TRANSISTOR c104 TL249 TL145 PDF

    TL272

    Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
    Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty


    Original     		PTFB201402FC PTFB201402FC H-37248-4 17ubstances. TL272 tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O PDF

    TL250

    Abstract: TL239
    Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,


    Original     		PTFB093608FV PTFB093608FV H-34275G-6/2 TL250 TL239 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,


    Original     		PTFB093608FV PTFB093608FV H-34275G-6/2 PDF

    TL306

    Abstract: TL184 TL167 TL307
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 96stances. TL306 TL184 TL167 TL307 PDF

    PTFB093608

    Abstract: 32c216 PTFB093608SV c221 TRANSISTOR TL251 tl250 transistor tl120 ATC100B2R7BW500X TL143
    Text: PTFB093608SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PTFB093608SV PTFB093608SV H-34275G-6/2 PTFB093608 32c216 c221 TRANSISTOR TL251 tl250 transistor tl120 ATC100B2R7BW500X TL143 PDF

    TL256

    Abstract: TL160 TL247
    Text: PTAB182002FC Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz Description The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output


    Original     		PTAB182002FC PTAB182002FC 190-watt H-37248-4 TL256 TL160 TL247 PDF