MS-026
Abstract: MT55L256L32P MT55L256L36P MT55L256V32P MT55L256V36P MT55L512L18P MT55L512V18P
Text: 8Mb: 512K x 18, 256K x 32/36 PIPELINED ZBT SRAM 8Mb ZBT SRAM MT55L512L18P, MT55L512V18P, MT55L256L32P, MT55L256V32P, MT55L256L36P, MT55L256V36P 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • • • •
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Original
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MT55L512L18P,
MT55L512V18P,
MT55L256L32P,
MT55L256V32P,
MT55L256L36P,
MT55L256V36P
100-Pin
119-Pin
165-pin
MT55L512L18P
MS-026
MT55L256L32P
MT55L256L36P
MT55L256V32P
MT55L256V36P
MT55L512V18P
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PDF
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MT55L256L18P1T-10A
Abstract: MS-026 MT55L128L32P1 MT55L128L36P1 MT55L128V32P1 MT55L128V36P1 MT55L256L18P1 MT55L256L18P1T-10 MT55L256V18P1 84 FBGA thermal
Text: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 PIPELINED ZBT SRAM 4Mb ZBT SRAM MT55L256L18P1, MT55L256V18P1, MT55L128L32P1, MT55L128V32P1, MT55L128L36P1, MT55L128V36P1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • •
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Original
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MT55L256L18P1,
MT55L256V18P1,
MT55L128L32P1,
MT55L128V32P1,
MT55L128L36P1,
MT55L128V36P1
August/7/00
119-pin
165-pin
MT55L256L18P1
MT55L256L18P1T-10A
MS-026
MT55L128L32P1
MT55L128L36P1
MT55L128V32P1
MT55L128V36P1
MT55L256L18P1T-10
MT55L256V18P1
84 FBGA thermal
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PDF
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MT58L64L36P
Abstract: MS-026 MT58L128L18P MT58L128V18P MT58L64L32P MT58L64V32P MT58L64V36P
Text: NOT RECOMENDED FOR NEW DESIGNS 2Mb: 128K x 18, 64K x 32/36 PIPELINED, SCD SYNCBURST SRAM 2Mb SYNCBURST SRAM MT58L128L18P, MT58L64L32P, MT58L64L36P; MT58L128V18P, MT58L64V32P, MT58L64V36P 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, SingleCycle Deselect FEATURES
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Original
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MT58L128L18P,
MT58L64L32P,
MT58L64L36P;
MT58L128V18P,
MT58L64V32P,
MT58L64V36P
June/21/00
x32/36
165-Pin
March/3/00
MT58L64L36P
MS-026
MT58L128L18P
MT58L128V18P
MT58L64L32P
MT58L64V32P
MT58L64V36P
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PDF
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Untitled
Abstract: No abstract text available
Text: SRAM ADDENDUM Attention: Micron has discontinued its 119-pin BGA SRAM package. While we are currently working to update these data sheets, please note that this data sheet still shows the discontinued package. For further information please call 208-368-3900.
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Original
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119-pin
MT55L512L18F
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PDF
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Untitled
Abstract: No abstract text available
Text: 1Mb: 64K x 18, 32K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM 1Mb SYNCBURST SRAM MT58L64L18D, MT58L32L32D, MT58L32L36D 3.3V VDD, 3.3V I/O, Pipelined, DoubleCycle Deselect FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD
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Original
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MT58L64L18D,
MT58L32L32D,
MT58L32L36D
MT58L64L18D
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PDF
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Untitled
Abstract: No abstract text available
Text: 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD
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Original
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MT58L512L18F,
MT58L256L32F,
MT58L256L36F;
MT58L512V18F,
MT58L256V32F,
MT58L256V36F
July/18/00
119-Pin
165-pin
June/13/00
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb4 SRAM 9Mb QDR SRAM MT54V512H18E 4-Word Burst FEATURES • 9Mb Density 512Kx18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation
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Original
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MT54V512H18E
512Kx18)
MT54V512H18E
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb2 SRAM 9Mb QDR SRAM MT54V512H18A 2-Word Burst FEATURES 165-Pin FBGA • 9Mb Density 512K x 18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE
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Original
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MT54V512H18A
165-Pin
MT54V512H18A
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PDF
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zbt sram 1994
Abstract: No abstract text available
Text: SRAM ADDENDUM Attention: Micron has discontinued its 119-pin BGA SRAM package. While we are currently working to update these data sheets, please note that this data sheet still shows the discontinued package. For further information please call 208-368-3900.
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Original
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119-pin
MT55L256L18F1,
MT55L128L32F1,
MT55L128L36F1;
MT55L256V18F1,
MT55L128V32F1,
MT55L128V36F1
MT55L256L18F1
zbt sram 1994
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM MT55L512L18F, MT55L256L32F, MT55L256L36F; MT55L512V18F, MT55L256V32F, MT55L256V36F 8Mb ZBT SRAM 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • •
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Original
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MT55L512L18F,
MT55L256L32F,
MT55L256L36F;
MT55L512V18F,
MT55L256V32F,
MT55L256V36F
MT55L512L18F
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PDF
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Untitled
Abstract: No abstract text available
Text: 256K x 36 2.5V VDD, HSTL, PIPELINED DDR SRAM 9Mb DDR SRAM MT57V256H36P FEATURES • • • • • • • • • • • • • • • • • • 165-Ball FBGA Fast cycle times: 5ns and 6ns 256K x 36 configuration Pipelined double data rate operation
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Original
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MT57V256H36P
165-Ball
MT57V256H36P
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • •
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Original
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August/7/00
165-pin
MT55L256L18F1
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 256K x 36 2.5V VDD, HSTL, PIPELINED DDR SRAM 9Mb DDR SRAM MT57V256H36P FEATURES • • • • • • • • • • • • • • • • • • 165-Pin FBGA Fast cycle times: 3.3ns, 4ns, 5ns and 6ns 256K x 36 configuration Pipelined double data rate operation
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Original
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MT57V256H36P
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PDF
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Untitled
Abstract: No abstract text available
Text: 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD
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Original
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100-pin
165-pin
119-pin
July/18/00
June/13/00
MT58L512L18F
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PDF
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4c 8184
Abstract: BGA 2J marking code 18-SE
Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • •
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Original
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Apr/6/00
Jan/18/00
119-pin
Nov/11/99
MT55L1MY18F
4c 8184
BGA 2J marking code
18-SE
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb2 SRAM 9Mb QDR SRAM MT54V512H18A 2-Word Burst FEATURES 165-Pin FBGA • 9Mb Density 512K x 18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE
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Original
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MT54V512H18A
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 0.13µm Process 36Mb: 2 MEG x 18, 1 MEG x 32/36 PIPELINED ZBT SRAM 36Mb ZBT SRAM MT55L2MY18P, MT55V2MV18P, MT55L1MY32P, MT55V1MV32P, MT55L1MY36P, MT55V1MV36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O Features Figure 1: 100-Pin TQFP • High frequency and 100 percent bus utilization
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Original
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MT55L2MY18P
165-ball
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PDF
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BW35
Abstract: No abstract text available
Text: ADVANCE‡ 4 MEG X 8, 4 MEG X 9, 2 MEG X 18, 1 MEG X 36 1.8V VDD, HSTL, DDRIIb4 SRAM 36Mb DDRII CIO SRAM 4-WORD BURST MT57W4MH8J MT57W4MH9J MT57W2MH18J MT57W1MH36J FEATURES • • • • • • • • • • • • • • • Figure 1 165-Ball FBGA
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Original
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MT57W1MH36J
BW35
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PDF
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect
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Original
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Apr/6/00
Jan/18/00
Nov/11/99
MT58L1MY18P
MT58L1MY18P
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDR SIO SRAM 18Mb DDR SIO SRAM 2-WORD BURST MT57W2MH8C MT57W1MH18C MT57W512H36C FEATURES • • • • • • • • • • • • • • • • • • DLL circuitry for accurate output data placement
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Original
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MT57W1MH18C
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PDF
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Untitled
Abstract: No abstract text available
Text: 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD
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Original
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100-pin
165-pin
119-Pin
MT58L512L18F
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PDF
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MT58L128L32
Abstract: No abstract text available
Text: 4Mb: 256K x 18, 128K x 32/36 PIPELINED, SCD SYNCBURST SRAM 4Mb SYNCBURST SRAM MT58L256L18P1, MT58L128L32P1, MT58L128L36P1; MT58L256V18P1, MT58L128V32P1, MT58L128V36P1 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES 100-PIN TQFP1 • Fast clock and OE# access times
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Original
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165-pin
100-pin
119-Pin
MT58L256L18P1
MT58L128L32
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PDF
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Untitled
Abstract: No abstract text available
Text: 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, PIPELINED ZBT SRAM 2Mb ZBT SRAM MT55L128L18P1, MT55L64L32P1, MT55L64L36P1 3.3V VDD, 3.3V I/O FEATURES • • • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization
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Original
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June/21/00
x32/36
165-Pin
May/23/00
MT55L128L18P1
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb4 SRAM 9Mb QDR SRAM MT54V512H18E 4-Word Burst FEATURES • 9Mb Density 512Kx18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation
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Original
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512Kx18)
MT54V512H18E
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PDF
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