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    TO-252 NA Search Results

    TO-252 NA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADC1038CIWM Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 8 Channel, Serial Access, PDSO20, SOP-20 Visit Rochester Electronics LLC Buy
    TL505CN Rochester Electronics LLC ADC, Dual-Slope, 10-Bit, 1 Func, 1 Channel, Serial Access, BIMOS, PDIP14, PACKAGE-14 Visit Rochester Electronics LLC Buy
    ML2258CIQ Rochester Electronics LLC ADC, Successive Approximation, 8-Bit, 1 Func, 8 Channel, Parallel, 8 Bits Access, PQCC28, PLASTIC, LCC-28 Visit Rochester Electronics LLC Buy
    CA3310AM Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, PDSO24, PLASTIC, MS-013AD, SOIC-24 Visit Rochester Electronics LLC Buy
    CA3310M Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, PDSO24, PLASTIC, MS-013AD, SOIC-24 Visit Rochester Electronics LLC Buy

    TO-252 NA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    6680

    Abstract: FZ9935
    Text: TO-252 Tape and Reel Data D-PAK TO-252 Packaging Configuration: Figure 1.0 Packaging Description: TO-252 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated


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    O-252 O-252) 330cm 164mm 6680 FZ9935 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU01N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading


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    O-252 CJU01N60 O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU02N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading


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    O-252 CJU02N60 O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SA1242 TRANSISTOR PNP TO-252 FEATURES z Strobe Flash Applications Medium Power Amplifier Applications z Excellent hFE Linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)


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    O-252 2SA1242 O-252 -100uA, PDF

    CHM25N15LPAGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CHM25N15LPAGP CURRENT 25 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small package. (TO-252)


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    CHM25N15LPAGP O-252) 250uA CHM25N15LPAGP PDF

    CHM05N65PAGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM05N65PAGP N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 4 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small flat package. D-PAK(TO-252)


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    CHM05N65PAGP O-252) 250uA CHM05N65PAGP PDF

    TRANSISTOR SMD CODE 15

    Abstract: smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A
    Text: SMD Power Transistor NPN 2SD669XD/2SD669AXD SMD Power Transistor (NPN) Features • Designed for general purpose power applications • Rugged and reliable • RoHS compliance D-PACK (TO-252) Mechanical Data Case: D-PACK(TO-252), Plastic Package Terminals:


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    2SD669XD/2SD669AXD O-252) MIL-STD-202G, 2SD669XD 2SD669AXD TRANSISTOR SMD CODE 15 smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A PDF

    100C

    Abstract: No abstract text available
    Text: SSD01L60 1A, 600V,RDS ON 12Ω N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente Description TO-252 The SSD01L60 (TO-252) is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. Features


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    SSD01L60 O-252 O-252) 01-Jun-2002 100C PDF

    3543

    Abstract: No abstract text available
    Text: MJD31C Low voltage NPN power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252


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    MJD31C O-252 MJD32C O-252 MJD31C MJD31CT4 3543 PDF

    d1 marking code dpak transistor

    Abstract: MJD32CT4
    Text: MJD32C Low voltage PNP power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252


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    MJD32C O-252 MJD31C O-252 MJD32C MJD32CT4 d1 marking code dpak transistor MJD32CT4 PDF

    TD03B

    Abstract: 80530 TO-252 TO252 MS101189
    Text: Transistor Outline TO-252 3 Lead Molded TO-252 NS Package Number TD03B LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:


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    O-252) O-252 TD03B MS101189 TD03B 80530 TO-252 TO252 MS101189 PDF

    JESD97

    Abstract: MJD31C MJD31CT4
    Text: MJD31CT4 Low voltage NPN power transistor General features • Surface-mounting TO-252 power package in tape & reel ■ In compliance with the 2002/93/EC European Directive 3 Applications ■ 1 General purpose switching and amplifier transistor DPAK TO-252


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    MJD31CT4 O-252 2002/93/EC O-252 MJD31C JESD97 MJD31C MJD31CT4 PDF

    JESD97

    Abstract: MJD31C MJD32C MJD32CT4
    Text: MJD32C Low voltage PNP power transistor Features • NPN type is MJD31C ■ Surface-mounting TO-252 power package in tape & reel Applications ■ 3 1 General purpose switching and amplifier Description DPAK TO-252 The device is manufactured in Planar technology


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    MJD32C MJD31C O-252 O-252 MJD32CT4 JESD97 MJD31C MJD32C MJD32CT4 PDF

    2SA1242

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/252 Plastic-Encapsulate Transistors 2SA1242 TRANSISTOR PNP TO-251 TO-252-2L FEATURES z Strobe Flash Applications Medium Power Amplifier Applications z Excellent hFE linearity 123 1 123 1. BASE : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)


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    O-251/252 2SA1242 O-251 O-252-2L -100uA, 2SA1242 PDF

    13473

    Abstract: MJD31C MJD31CT4-A MJD32C
    Text: MJD31CT4-A Low voltage NPN power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application ■ DPAK TO-252 General purpose linear and switching


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    MJD31CT4-A O-252 MJD32C O-252 MJD31C 13473 MJD31C MJD31CT4-A MJD32C PDF

    MJD32C

    Abstract: Date Code Marking STMicroelectronics PACKAGE DPAK MJD31C MJD32CT4 MJD32C st
    Text: MJD32C Low voltage PNP power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology


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    MJD32C O-252 MJD31C O-252 MJD32CT4 MJD32C Date Code Marking STMicroelectronics PACKAGE DPAK MJD31C MJD32CT4 MJD32C st PDF

    MJD31C

    Abstract: MJD32C MJD32CT4
    Text: MJD32C Low voltage PNP power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology


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    MJD32C O-252 MJD31C O-252 MJD32CT4 MJD31C MJD32C MJD32CT4 PDF

    MJD31C

    Abstract: MJD32C MJD32CT4-A
    Text: MJD32CT4-A Low voltage PNP power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the NPN type MJD31C 3 1 Application ■ DPAK TO-252 General purpose linear and switching


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    MJD32CT4-A O-252 MJD31C O-252 MJD32C MJD31C MJD32C MJD32CT4-A PDF

    Untitled

    Abstract: No abstract text available
    Text: SSD484 25A, 30V,RDS ON 15mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product Description TO-252 The SSD484 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TO-252 package is universally preferred for all commercial-industrial


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    SSD484 O-252 SSD484 O-252 01-Jun-2002 PDF

    SSD408

    Abstract: mosfet 30V 18A TO 252
    Text: SSD408 18A, 30V,RDS ON 18mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product Description TO-252 The SSD408 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TO-252 package is universally preferred for all commercial-industrial


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    SSD408 O-252 SSD408 O-252 01-Jun-2002 mosfet 30V 18A TO 252 PDF

    Date Code Marking STMicroelectronics PACKAGE DPAK

    Abstract: MJD31C MJD31CT4 MJD32C
    Text: MJD31C Low voltage NPN power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology


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    MJD31C O-252 MJD32C O-252 MJD31CT4 Date Code Marking STMicroelectronics PACKAGE DPAK MJD31C MJD31CT4 MJD32C PDF

    MJD31C

    Abstract: MJD31CT4-A MJD32C Date Code Marking STMicroelectronics PACKAGE DPAK
    Text: MJD31CT4-A Low voltage NPN power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application ■ DPAK TO-252 General purpose linear and switching


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    MJD31CT4-A O-252 MJD32C O-252 MJD31C MJD31C MJD31CT4-A MJD32C Date Code Marking STMicroelectronics PACKAGE DPAK PDF

    MJD31C

    Abstract: MJD31CT4 MJD32C
    Text: MJD31C Low voltage NPN power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology


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    MJD31C O-252 MJD32C O-252 MJD31CT4 MJD31C MJD31CT4 MJD32C PDF

    MJD31C

    Abstract: MJD32C MJD32CT4-A
    Text: MJD32CT4-A Low voltage PNP power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the NPN type MJD31C 3 1 Application ■ DPAK TO-252 General purpose linear and switching


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    MJD32CT4-A O-252 MJD31C O-252 MJD32C MJD31C MJD32C MJD32CT4-A PDF