Untitled
Abstract: No abstract text available
Text: KSMD5P20 / KSMU5P20 200V P-Channel MOSFET TO-252 TO-251 Features • • • • • -3.7A, -200V, RDS on = 1.4Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested General Description These P-Channel enhancement mode power field effect
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KSMD5P20
KSMU5P20
O-252
O-251
-200V,
30TYP
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Untitled
Abstract: No abstract text available
Text: KSMD1P50 / KSMU1P50 500V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -1.2A, -500V, RDS on = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSMD1P50
KSMU1P50
O-252
O-251
-500V,
30TYP
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PDF
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Untitled
Abstract: No abstract text available
Text: KSMD2P40 / KSMU2P40 400V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -1.56A, -400V, RDS on = 6.5Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSMD2P40
KSMU2P40
O-252
O-251
-400V,
30TYP
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PDF
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Untitled
Abstract: No abstract text available
Text: KSMD4P25 / KSMU4P25 250V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -3.1A, -250V, RDS on = 2.1Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 10.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSMD4P25
KSMU4P25
O-252
O-251
-250V,
30TYP
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PDF
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Untitled
Abstract: No abstract text available
Text: KSMD12P10 / KSMU12P10 100V P-Channel MOSFET TO-252 TO-251 Features • • • • • • • -9.4A, -100V, RDS on = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSMD12P10
KSMU12P10
O-252
O-251
-100V,
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Untitled
Abstract: No abstract text available
Text: KSMD11P06 / KSMU11P06 60V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -9.4A, -60V, RDS on = 0.185Ω @VGS = -10 V Low gate charge ( typical 13 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSMD11P06
KSMU11P06
O-252
O-251
30TYP
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PDF
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Untitled
Abstract: No abstract text available
Text: KSMD5P10 / KSMU5P10 100V P-Channel MOSFET TO-252 Features • • • • • • • TO-251 -3.6A, -100V, RDS on = 1.05Ω @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSMD5P10
KSMU5P10
O-252
O-251
-100V,
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Untitled
Abstract: No abstract text available
Text: KSMD3P50 / KSMU3P50 500V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -2.1A, -500V, RDS on = 4.9Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSMD3P50
KSMU3P50
O-252
O-251
-500V,
Abso02
30TYP
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PDF
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Untitled
Abstract: No abstract text available
Text: KSMD2P25 / KSMU2P25 250V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -2.0A, -250V, RDS on = 4.0Ω @VGS = -10 V Low gate charge ( typical 6.5 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSMD2P25
KSMU2P25
O-252
O-251
-250V,
30TYP
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PDF
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Untitled
Abstract: No abstract text available
Text: KSMD17P06 / KSMU17P06 60V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -12A, -60V, RDS on = 0.135Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSMD17P06
KSMU17P06
O-252
O-251
30TYP
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PDF
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Untitled
Abstract: No abstract text available
Text: KSMD4P40 / KSMU4P40 400V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -2.7A, -400V, RDS on = 3.1Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description
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KSMD4P40
KSMU4P40
O-252
O-251
-400V,
30TYP
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PDF
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Untitled
Abstract: No abstract text available
Text: KSMD8P10TM_F085 100V P-Channel MOSFET TO-252 Features • • • • • • • • -6.6A, -100V, RDS on = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability Qualified to AEC Q101
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KSMD8P10TM
O-252
-100V,
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Untitled
Abstract: No abstract text available
Text: KSMD7P06 / KSMU7P06 60V P-Channel MOSFET Features • • • • • • TO-252 -5.4A, -60V, RDS on = 0.45Ω @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-251 General Description
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KSMD7P06
KSMU7P06
O-252
O-251
30TYP
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PDF
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Untitled
Abstract: No abstract text available
Text: KSMD6P25 / KSMU6P25 250V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -4.7A, -250V, RDS on = 1.1Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description
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KSMD6P25
KSMU6P25
O-252
O-251
-250V,
30TYP
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PDF
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1E14
Abstract: 2E12 FRK254D FRK254H FRK254R
Text: FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRK254D,
FRK254R,
FRK254H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
1E14
2E12
FRK254D
FRK254H
FRK254R
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IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω
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RF1S9630SM
RF1S4N100SM
RF1S630SM
RF1S70N06SM
RF1S70N03SM
O-263AB)
LC96586
IRF P CHANNEL MOSFET 200V 20A
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
N CHANNEL MOSFET 10A 1000V
IRF P-Channel FET 200v 20A
IRF P CHANNEL MOSFET 10A 100V
p channel mosfet 100v 70a to-252
IRF P CHANNEL MOSFET 100v
IRF P-Channel FET 100v
IRF P CHANNEL MOSFET TO-252
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SI3456DV
Abstract: SI4420DY SI4874DY SUD50N03 lmt zener
Text: Application Report SLVA135 - MAY 2003 A Step-By-Step Design Approach to TPS2300/01/11/20/21/30/31 Hotswap Controllers Heping Dai PMP Systems Power ABSTRACT The TPS2300/01/10/11/20/21/30/31 hotswap controllers allow safe board insertion and removal from a live backplane. With the current-sensing resistor RSENSE and the
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SLVA135
TPS2300/01/11/20/21/30/31
TPS2300/01/10/11/20/21/30/31
TPS23xx
SI3456DV
SI4420DY
SI4874DY
SUD50N03
lmt zener
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PDF
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Untitled
Abstract: No abstract text available
Text: FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 20A, 250V, RDS on = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRK254D,
FRK254R,
FRK254H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
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PDF
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SEM 238
Abstract: 1E14 2E12 FRK254D FRK254H FRK254R Rad Hard in Fairchild for MOSFET
Text: FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRK254D,
FRK254R,
FRK254H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
SEM 238
1E14
2E12
FRK254D
FRK254H
FRK254R
Rad Hard in Fairchild for MOSFET
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PDF
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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PDF
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pj 72 diode
Abstract: pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 vp1550 pj 85 lv
Text: Chapter S: Product Selector Guides Chapter Product Selector Guides 1. Hotswap Controller ICs/lnrush Current Limiters/Circuit Breaker IC s. 248 2. LED Driver IC s .
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OCR Scan
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VP1550
VP2106
VP2110
VP2206
VP2450
VP3203
TC2320
-200V
pj 72 diode
pj 49 diode
pj 44 diode
ic 7pin dip PWM Converter
pj 89 diode
9v 200 ohm relay
P248L
VP0808
pj 85 lv
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PDF
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Untitled
Abstract: No abstract text available
Text: FLL400IP-3 _ FEATURES • • • • • L-Band Medium & High Power GaAs FET Push-Pull Configuration High Power Output: 35W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V
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OCR Scan
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FLL400IP-3
FLL400IP-3
FCSI0598M200
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PDF
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Untitled
Abstract: No abstract text available
Text: tyvvys / FRK254D, FRK254R, FRK254H S e m ico n d ucto r y 7 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
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FRK254D,
FRK254R,
FRK254H
170S1
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
O-204AE
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PDF
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CD 294
Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package
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OCR Scan
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FLC167WF
FLC167WF
FCSI0598M200
CD 294
FLL357
348dB
FLL400IP-2
FLK102MH-14
hemt low noise die
Fujitsu GaAs FET Amplifier
FLK017XP
FLL120
fujitsu gaas fet
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