5962-9054301MQA
Abstract: 5962-9054304MQA qml-38535 smd transistor db2
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with NOR 5962-R218-94. 94-07-20 Monica L. Poelking B Changes in accordance with NOR 5962-R068-95. 95-02-17 Monica L. Poelking C Update boilerplate to MIL-PRF-38535 requirements. - CFS
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5962-R218-94.
5962-R068-95.
MIL-PRF-38535
COLUM7A-12
MR82C37A-12
5962-9054301MQA
5962-9054304MQA
qml-38535
smd transistor db2
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 ISSUE 2 JUNE 94 FEATURES * 4.5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent gain up to 20 Amps * Very low leakage * Exceptional gain linearity down to 10mA
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ZTX948
100ms
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX949 ISSUE 3 JUNE 94 FEATURES * 4.5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent gain up to 20 Amps * Very low leakage * Exceptional gain linearity down to 10mA
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ZTX949
100ms
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ZBD849
Abstract: transistor bf 970
Text: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A MARCH 94 FEATURES * Fast switching
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ZBD849
ZBD849
transistor bf 970
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BFW92
Abstract: No abstract text available
Text: BFW92 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92 Marking: BFW92 Plastic case TO 50
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BFW92
BFW92
D-74025
31-Oct-97
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LB1200
Abstract: T092 ZTX953 LB120
Text: PNP SILICON PLANAR MEDIUM POWER I HIGH CURRENT TRANSISTOR CorltinUOUs “ LJp to 10 Amps * Very * Excellent * Spice I ZTX953 1 ISSUE 4- JUNE 94 FEATIJRES + ~fj A~ps I ~ current /’ q peak current low saturation voltage gain up to 10 Amps moclel available
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ZTX953
LB1200
T092
ZTX953
LB120
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BFW92A
Abstract: No abstract text available
Text: BFW92A Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A Plastic case TO 50
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BFW92A
BFW92A
D-74025
31-Oct-97
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ISSUE 3 JUNE 94 FEATURES * 2 Amps continuous current * Up to 5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 2 Amps * Spice model available C B E E-Line
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ZTX956
100ms
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BFR91A
Abstract: transistor BFR91A apr 241 BFR91A transistor datasheet marking 544 amplifier
Text: BFR91A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR91A Marking: BFR91A Plastic case TO 50
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BFR91A
BFR91A
D-74025
17-Apr-96
transistor BFR91A
apr 241
BFR91A transistor datasheet
marking 544 amplifier
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2n3391a
Abstract: No abstract text available
Text: NPN Transistors bSDllBD uctor Discrete POWER & Signal Technologies " NPN General Purpose Amplifiers and Switches OOHÜMbl 2fil I to Device No. Case Style 2N3390 VCBO V CEO ^EBO V Min (V) Min (V) Min TO-92 (94) 25 25 2N3391A TO-92 (94) 25 2N3392 TO-92 (94)
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OCR Scan
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2N3390
2N3391A
2N3392
2N3393
2N3415
2N3416
2N3417
2N3704
2N5172
IVPS8098
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ST3904
Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712
Text: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.
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NPN 2N3391A
Abstract: 2N3702 NATIONAL SEMICONDUCTOR PS6514
Text: N IMAIL SEPIICOND -[DISCRETE tflE D • b5D113Q Q03TSE3 b?t. ■ Devices Volts Min 25 (mA) Max Min Max 2N3391A 100 250 500 2N3392 100 150 300 NPN ra p fllA NF (dB) Max 2.0 120 Typ. 2.0 5.0 T0-92(94) 360 2.0 120 Typ. 2.0 TO-92(94) 360 120 Typ. 2.0 TO-92(94)
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b5D113Q
Q03TSE3
2N3391A
2N3392
2N3393
2N3415
2N4124
2N5172
BC238
BC338
NPN 2N3391A
2N3702 NATIONAL SEMICONDUCTOR
PS6514
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2N5306 NATIONAL SEMICONDUCTOR
Abstract: NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A
Text: This NPN Transistors v EBO V Min Ic e s ' 'CBO a (jiA) Max Its Case Style 2N5305 TO-92 (94) 0.1 2N5306 TO-92 (94) 2N5307 *c @ VCE (mA) (V) VCE(SAT) VBE(SAT) . (V) & (V) 0 C Max Min Max ( ) fT (MHz) C0b (pF) Max Min @ lc (mA) Process No. 25 2000 20,000 2
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D0370b0
2N5306 NATIONAL SEMICONDUCTOR
NSDU45
darlington transistor MPSw45
D40C2
D40K1
NSDU45A
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A1019
Abstract: A1019 TRANSISTOR DIODE BUZ 94 BUZ94 TC-130-W
Text: SIEM ENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type v DS h BUZ 94 600 V 7.8 A ^DS on 0.9 Si Package 1> Ordering Code TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Continuous drain current, Pulsed drain current, Symbol Tc = 27 "C
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O-204
C67078-A1019-A2
fl235b05
623StiOS
0235bG5
A1019
A1019 TRANSISTOR
DIODE BUZ 94
BUZ94
TC-130-W
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type V Ds BUZ 94 600 V /d 7.8 A ^DS on Package 1> Ordering Code 0.9 Q TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 27 'C h 7.8 Pulsed drain current, Tc = 25 ”C
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O-204
C67078-A1019-A2
35bOS
fi535tDS
A235bQ5
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9a2 diode
Abstract: JC86
Text: SIEMENS SIPMOS Power MOS Transistor VDS lD = 600 V = 7.8 A ^ D S o n = 0 -9 BUZ 94 O • N channel • E nhancem ent mode • A valanche-proof • Package: TO -204 AA (T O -3 )') Type Ordering code BUZ 94 C 670 78-A 101 9-A2 Parameter Symbol Values Unit
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9a2 diode
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor BUZ 94 N channel Enhancement m ode Type ^ DS Id ^ D S o n Package 11 Ordering Code BUZ 94 600 V 7.8 A 0.9 n TO-204 AA C67078-A101 9-A2 Maxim um Ratings Parameter Symbol Continuous drain current, Tc = 27 "C Id 7.8 Pulsed drain current, Tc = 25 "C
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OCR Scan
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O-204
C67078-A101
9a2 diode
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors Page TO-3 Metal Case 94 TO-66 Metal Case 98 TO-126 Plastic Case 99 TO-202 Plastic Case 101 TO-218 Plastic Case 102 TO-220 Plastic Case 104 TO-237 Plastic Case 107 93
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OCR Scan
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O-126
O-202
O-218
O-220
O-237
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Untitled
Abstract: No abstract text available
Text: Power Transistors Page TO-3 Metal Case 94 TO-66 Metal Case 98 TO-126 Plastic Case 99 TO-202 Plastic Case 101 TO-218 Plastic Case 102 TO-220 Plastic Case 104 TO-237 Plastic Case 107 93
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OCR Scan
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O-126
O-202
O-218
O-220
O-237
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SMD TRANSISTOR MARKING P28
Abstract: SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf
Text: REVISIONS LTR D DESCRIPTION DATE YR-MO-DA APPROVED Add device type 05. Add vendor CAGE 27014. Make changes to 1.3, 1.4, table I, figures 1 ,3 ,4 , 5, and 6. 93-05-10 M. A. FRYE Changes in accordance with N.O.R. 5962-R053-94. 94-06-24 M. A. FRYE Redrawn with changes. Technical and editorial changes
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5962-R053-94.
SMD TRANSISTOR MARKING P28
SMD transistor MARKING CODE g23
TRANSISTOR SMD MARKING CODE kn
SMD MARKING CODE P28
g23 SMD Transistor
5962-8950303GC
smd transistor marking G23
5962-8950303PA
gu32
SMD TRANSISTOR MARKING jf
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94B DIODE
Abstract: BDw 32 w94C
Text: BDW94/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS TO-220 • Complement to BDW93, BDW93A, BDW93B and BDW93C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit BDW 94 BDW 94A BDW 94B
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OCR Scan
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BDW94/A/B/C
BDW93,
BDW93A,
BDW93B
BDW93C
O-220
300fiS,
94B DIODE
BDw 32
w94C
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ztx953
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX953 ISSUE 4 - JU N E 94 - FEATURES * 3.5 Am ps continuous current * Up to 10 Am ps peak current * Very low saturation voltage * Excellent gain up to 10 Am ps * Spice m odel available
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OCR Scan
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ZTX953
-10mA,
-100mA,
50MHz
-200mA
200mA,
ztx953
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lr 3103
Abstract: ER6V
Text: PNP SILICON PLANAR POWER TRANSISTOR ZBD953 PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * Fast switching * Guaranteed hFE specified up to 4 Amps * Low collector-emitter saturation voltage T0126 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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OCR Scan
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ZBD953
T0126
--10mA,
50MHz
-200mA
200mA,
300jis.
lr 3103
ER6V
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 IS S U E 2 - J U N E 94. . . FEATURES * 4.5 A m p s continuous current * U p to 20 A m p s peak current
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OCR Scan
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ZTX948
0Q1Q354
001G35S
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