Untitled
Abstract: No abstract text available
Text: NTE228A Silicon NPN Transistor High Voltage Amp, Video Output Description: The NTE228A is a silicon NPN transistor in a TO202M type package designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators.
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NTE228A
NTE228A
O202M
600mV
20MHz
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NTE228A
Abstract: NTE228
Text: NTE228A Silicon NPN Transistor High Voltage Amp, Video Output Description: The NTE228A is a silicon NPN transistor in a TO202M type package designed for high−voltage TV video and chroma output circuits, high−voltage linear amplifiers, and high−voltage transistor regulators.
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NTE228A
NTE228A
O202M
600mV
Vol180
20MHz
NTE228
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B0530
Abstract: MPSU57 motorola 2SA958 2N2882 ppc power transistor
Text: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 SOT69504 SOT69604 SOT69604 SOT3504 SOT3504 SOT3504 SOT3512 SOT3512 ~~~ggJ2 25 30 2N6180 2SA1008 2SA1395M B03700 B03700 B03720 B03720 SOT69512 ~~+~~~~~ 35 40 SOT69612 MM5007 NSOU57 SOT3508 SOT3508 SOT3508
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RCA1A04
SML69604
SML69612
SML3504
SML3508
SML3512
SML3516
2N2882
2N3207
BLX41
B0530
MPSU57 motorola
2SA958
ppc power transistor
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B0139
Abstract: B0135 B0137 B0139-16 B0139-6 KT815B B0137-16 B0829 B01-35 B0139-10
Text: POWER SILICON NPN Ic Item Number Part Number I C 5 10 15 20 25 30 35 -40 45 50 60 - 65 70 75 80 85 90 95 Max Y(BR)CEO (A) (V) fT hFE Min Max (Hz) ICBO t, Max tf Max Po Max TOper Max (A) (s) (s) (W) (Oe) 4.4 4.4 4.4 11 11 7.0 1.2 10 20 10 7.0 14 8.0 8.0 8.0
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40347Vl
40347V2
2SC1014
MJE720
KT815A
2S01295
2S0361
B0139
B0135
B0137
B0139-16
B0139-6
KT815B
B0137-16
B0829
B01-35
B0139-10
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B0933
Abstract: 2SC7900 2SD234Y 2S0234 2sc3386 2S0255 B0241A b0131 5000N 2S0234Y
Text: POWER SILICON NPN Item Number Part Number I C 5 10 - 15 20 25 30 35 40 45 -50 55 60 65 70 75 80 -85 -90 >= -2~ 2S0130 2S0130R 2N3507 KT817B 2SC10S0 2SC10S1 2SC830 2S0234G 2S0234 2S0234R 100234 2S0234G-R 2S0130Y 2S02340 2S0234G-0 2S0130BL 2SC3386 2SC338SL
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Mall02
5000n
B0933
2SC7900
2SD234Y
2S0234
2sc3386
2S0255
B0241A
b0131
2S0234Y
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b0348
Abstract: 2N5333 motorola B0238 SGS-Ates SML3511 NSOU56 2N5322 motorola B0818 MPS-U56 mpsu56
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 SML69503 SML69511 SML69603 SML69611 SML3503 SML3507 SML3511 SML3515 ~b~~~~4 25 30 SOT3554 SOT3554 B0638 SOT3551 SOT3551 SOT3551 SOT3577 SOT3577 ~~:g77 35 40 BLX40 BLX40 SOT69503 SOT69503 SOT69603 SOT69603
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ZTX751
B0378-25
BSS17
2N5322
NS06180
2N6181
SK3179
SML3551
b0348
2N5333 motorola
B0238
SGS-Ates
SML3511
NSOU56
2N5322 motorola
B0818
MPS-U56
mpsu56
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NTE74HC4067
Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165
Text: Semiconductors Integrated Circuits Integrated Circuits cont. Part Number Description NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B
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NTE40175B
NTE4017B
NTE40182B
NTE4018B
NTE4001B
NTE4019B
NTE4001BT
NTE40192B
NTE4002B
NTE40193B
NTE74HC4067
NTE4097B
NTE74HC299
NTE4017B
NTE4007
NTE4023B
NTE4027B
NTE74HC4053
NTE4553B
NTE74HC165
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b0239c
Abstract: diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode
Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N5000 2N5150 2N5602 2N5154 2N6717 92GU06 92PU06 B0379-16 ~~~~~ 30 SOT5513 SOT5513 SOT5913 B0379-25 2SC3474 2S01914 2S01981 SK3512 - :g~~:~ - 25 35 -40 45 -50 RCA1A03 S2N4863-2 S2N4863-3 SMl5509 SMl5514
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OT5503
OT5903
2N6409
2S01516
b0239c
diode GG 66
diode 2U 66
MEAB
to-53
2U 39 diode
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2SA1370E
Abstract: 2SA13600 HITACHI AXIAL DIODE diode *7723 BCY77VII
Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 < 40 45 50 2SA916K 2N4930 2N4931 2N4931S 2N4931S BF723 BF870S TBF870 2N3743 BF721 BF872S TBF872 MRF5211 MRF5211l HA7520 HA7520 HA7521 HA7521 MM4008 -ecY77VIT 55 60 65 70 75 80 BCY77VII BCY77VIII
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BF470S
BF472
BF472S
HA7725
HA7734
HA7737
HA7723
2SA1370E
2SA13600
HITACHI AXIAL DIODE
diode *7723
BCY77VII
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2N640S
Abstract: B0636 B081S 2SA1241Y 2SA1241-Y B0378 B0526-5
Text: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 SK3267 2SB1201 2SA1241Y SMl3550 SMl3553 SMl3576 SMl3579 SMl69502 SMl69510 ~UI 25 30 35 40 RQRr,'} SMl69610 SMl3502 SMl3506 SMl3510 SMl3514 2N2881 2N320S SOT3553 SOT3553 SOT3553 B0378 B0378 B0378 B0636
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O-12S
OT-18S
O-202
O-237var
2N640S
B0636
B081S
2SA1241Y
2SA1241-Y
B0378
B0526-5
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B0813
Abstract: PT9787 8C440 MJ3237 trw PT9787 MM4048 MJE42C MJ2841 MOTOROLA MM1758 mmt2857
Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 NA31KY NA31MH NA31 MY SK3248 NA31KI NA31MI NA31KJ NA31MJ ~~~~g: 25 30 2NS204 S15-28 SMl5501 SMl550S SMl5511 SMl5901 SMl590S SMl5911 ~~~j~~ 35 40 80Y10 80Y10 PT9787 PT9787A 2N4431 2S022S 2S0226 SOT4301
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2SC109S
2NS714
92PU01
2S0180S
MPSU01
NSOU01
92GU01
NA31KY
B0813
PT9787
8C440
MJ3237
trw PT9787
MM4048
MJE42C
MJ2841 MOTOROLA
MM1758
mmt2857
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BT14B-SOOR
Abstract: CR3CM-12 X0403MF
Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 Cl07M4 Cl07M4 Cl07M Cl07M Cl0SM2 Cl0SM4 Cl0SM4 X0403ME X0403MF BT14B-SOOR ~b~~~~H 15 20 25 30 S0405MH S0407MH S0410MH S20S0M S20S1M NCMSOOC NCRSOOB Cl0BM2 Cl0BM2 Cl0BM2 Cl0BM4 C10BM4 2SF534 TXFS005 TYFS005
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Cl07M4
Cl07M
X0403ME
X0403MF
BT14B-SOOR
S0405MH
S0407MH
S0410MH
CR3CM-12
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2SC982
Abstract: TO226AA 92PU45 MPSU45 MPS-U45 2S0114 2S01140 2SC3132 b0477
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ie Max PD Max (V) (A) (W) hFE Min Max fT leBO Max tr Max tf Max TOper Max (Hz) (A) (8) (8) ee) 125M 75M 75M 75M 75M 75M 200M 200M 100M 125M 100n 500n 20u 500n 500n 500n 100n 100n 100n 100n
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MPSA14
040C1
040C2
040C3
BC517
BC517S
NS0151
MPSW13
2SC982
TO226AA
92PU45
MPSU45
MPS-U45
2S0114
2S01140
2SC3132
b0477
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b0349
Abstract: B0817 1/transistor b0349 to-53 2N3577 blx10 diode 300U 2S078 B0379 b0371
Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 SOT5512 SOT5512 SOT5912 B0377-25 2S01083 2S0975 B0321 B0321 ~g~~~ 25 30 2S01779 2N3138 2N3140 2N3142 2N3144 BOY11 BOY11 2S012A ~~~1~8U 35 40 BSS15 2N5320 NS06178 2N6179 S2N4150 S2N4150-1 BOB29-10 BOB29-6
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BC441-5
B0377-10
2N5598
2S078
NSOU05
2N6716
92GU05
92PU05
B0377-16
2S078-111
b0349
B0817
1/transistor b0349
to-53
2N3577
blx10
diode 300U
B0379
b0371
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123AP
Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
Text: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge
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123AP
NTE159)
NTE396)
NTE375)
NTE159
NTE123AP
NTE290A
935-6072
NTE184
NTE199
NTE128
NTE293
NTE130
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MSP90
Abstract: 2SC2224A BF617 BF393W 2sc2224 ST2260
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 30 35 40 BF393W2 2SC1505 2SC1506 2SC1506 2SC1507 2SC1507 2SC1507 2SC2621 2SC2653 ~:;~~t:i88 2SC2688 2SC2802 2SC2802 2SC4075 2S01112 KSC1507 KSC1520A 2SC3209M 2SC3554 ~~t;~~9L 45 50 2SC3209K 2SC3183
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2N6713
2SC1905
BF617
MPS6733
MJE3439
MSP90
2SC2224A
BF393W
2sc2224
ST2260
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motorola to-202
Abstract: 2SC685 2SC2241
Text: POWER SILICON NPN Item Number Part Number 10 15 20 25 30 fT hFE Min I C 5 V(BR)CEO Manufacturer Max (Hz) t, ICBO Max (A) Max 8) tf Max (8) PD Max (W) Toper Max °C) Package Style < 1 A, (Co nt' d) 100m 100m 100m 100m .10 100m 100m 100m 100m 100m 300 300 300
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O-202
T0-226
T0-66
O-226
O-202var
motorola to-202
2SC685
2SC2241
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2N3357
Abstract: X0403MF 2N3536 2N3406 2N3668 2n2646 2N3353 2N2646 texas transitron 2N2646p
Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Inti Device IntiRect IT 2N2547 Inti Device IntiRect IT 2N2548 Inti Device IntlRect IT 2N2549 Inti Device IntiRect IT 2N2550 Inti Device IntlRect IT 2N2574 2N2575 2N2576 2N2577 2N2578 2N2579 2N2619
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2N2547
2N2548
2N2549
2N2550
2N2574
2N2575
2N2576
2N2577
2N2578
2N2579
2N3357
X0403MF
2N3536
2N3406
2N3668
2n2646
2N3353
2N2646 texas
transitron
2N2646p
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ECG189
Abstract: ECG181 ECG162 ECG164 ECG186A ECG179 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG180 ECG172A ECG188
Text: Transistors cont'd E C G Type D escrip tio n and A pplicatio n (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To B a se V o lts Collector To Em itter V olts B a se to Em itter V o lts b v CBO b v CEO bvebo M ax. D e v ice D iss. P p W atts
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OCR Scan
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ECG162
ECG163A
ECG164
ECG165
ECG171
BC6296)
O-202
ECG172A
O-92HS
ECG192A
ECG189
ECG181
ECG186A
ECG179
# Frequency at which common emitter current gain is 70.0 of low frequency gain
ECG180
ECG188
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transistor ECG 152
Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041
Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application
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OCR Scan
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DDD714b
ECG36
ECG36MP*
ECG37)
T48-1
ECG37
ECG37MCP
ECG36)
ECG36
ECG37
transistor ECG 152
Bt 2313
transistor outlines
transistor ecg36
TRANSISTOR ecg 379
ECG157
123AP
transistor ECG 332
Philips ECG 152
ECG 3041
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Philips ECG222
Abstract: ECG222 ECG210 ECG130 ECG198 ECG216 ECG213 ECG217 ECG228A npn darlington transistor 150 watts
Text: PHILIPS E C G INC S4E D Transistors cont'd b v PNP-Si, A F PO ICompI to ECG192A) 70 ECG194 NPN-Si, Gen Purp HV Amp, Hi Speed Sw 180 ECG195A ECG196 C o lle c to r T o E m itte r V o lts Cbo bvceo 70 (CES) B a s e to E m itte r V o lt s b v M ax. C o lle c to r
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OCR Scan
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GGG71S1
ECG193A
ECG192A)
T-16HS
ECG194
ECG195A
ECG196
ECG225
O-39F
ECG226
Philips ECG222
ECG222
ECG210
ECG130
ECG198
ECG216
ECG213
ECG217
ECG228A
npn darlington transistor 150 watts
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transistor pnp ecg 180
Abstract: Transistor 123AP 123AP transistor BU 102A transistor fet ecg transistor. ECG 123AP 4511 gm Bt 2313 transistor t18 FET ecg 123 transistor
Text: PHILIPS E C G INC S4E D Transistors icont'd ECG Type D escription and A p plicatio n • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at T c = 25°C Unless Otherwise Noted) C ollector To Base V olts C ollector To E m itter V olts Base to E m itter V olts
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OCR Scan
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GGG71H7
ECG58
ECG59)
TB-35
T44-1
ECG59
ECG58)
ECG60
transistor pnp ecg 180
Transistor 123AP
123AP
transistor BU 102A
transistor fet ecg
transistor. ECG 123AP
4511 gm
Bt 2313
transistor t18 FET
ecg 123 transistor
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Untitled
Abstract: No abstract text available
Text: Maximum Breakdown Voltage Diag. No. Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) •c BVCBO BV ceo BVeb0 hFE Pd fT TO63 15 20 150 90 7 20 Min 200 20 High Current Amp, Fast Switch TO61 Isol 16 10 120 100 6 30 Min 115 30 NPN-Si
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NTE92)
93MCP
NTE92
NTE93
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Bt 2313
Abstract: Transistor 123AP transistor t18 FET transistor BD 263 transistor ECG 152 transistor ecg 226 123ap Philips ECG 152 ic 2429 ECG24
Text: PHILIPS E C G INC S4E D Transistors icont'd ECG Type Description and Application • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Collector To Emitter Volts b v Ceo Base to Emitter Volts
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OCR Scan
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PDF
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GGG71H7
ECG58
ECG59)
TB-35
T44-1
ECG59
ECG58)
ECG60
Bt 2313
Transistor 123AP
transistor t18 FET
transistor BD 263
transistor ECG 152
transistor ecg 226
123ap
Philips ECG 152
ic 2429
ECG24
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