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    TO220-NIS PACKAGE Search Results

    TO220-NIS PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TO220-NIS PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2057

    Abstract: toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662
    Text: 2003-5 BCE0017A PRODUCT GUIDE Power MOSFETs 2003 http://www.semicon.toshiba.co.jp/eng 2 C 1 2 3 4 O N T E N Features and Structure New Power MOSFET Products Selection Guide Power MOSFET Characteristics 1. SOP-8 Series 2. VS-6 / 8 Series, PS-8 Series 3. TFP Thin Flat Package Series


    Original     		PDF BCE0017A 2SK2610) 2SK794) K2057 toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662

    MOSFET TOSHIBA 2SK2917

    Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
    Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6


    Original     		PDF DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent

    2sk3625

    Abstract: 2SK3566 equivalent 2SK3868 2SK3878 2sj618 NTPCA8008-H 2sk 2sj complementary mosfet TPC8107 2SK2611 MOSFET TOSHIBA 2SK2917
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2sk3625 2SK3566 equivalent 2SK3868 2SK3878 2sj618 NTPCA8008-H 2sk 2sj complementary mosfet TPC8107 2SK2611 MOSFET TOSHIBA 2SK2917

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    2SK1603

    Abstract: 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855
    Text: Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to the S-MOS product line. The devices which comprise this family exhibit ultra-low ON-resistance (RDS(ON) and


    Original     		PDF 3515C-0202 F-93561, 2SK1603 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855

    K2543

    Abstract: MOSFET TOSHIBA 2SK MOSFET VDS 220V TO-220 equivalent 2sk2698 mosfet 2SK2996 equivalent transistor k2543 2sk2997 2SK2679 2SK2837 2sk2917
    Text: Avalanche Withstand Capability PRODUCT GUIDE Avalanche Withstand Capability Avalanc Power MOSFETs are used as high-speed switching devices in applications such as switching power supplies and DC-DC converters, where they contribute to miniaturization and lighter weight. The higher the operating frequency,


    Original     		PDF

    TA78033LS

    Abstract: TA7084AM ta7084 TA7085AM TA7804LS TA7086M TA78LxxAP TA76432s 4v TA7805LF TA78012AP
    Text: 2003-3 BCE0002A PRODUCT GUIDE Power Supply ICs semiconductor 2003 http://www.semicon.toshiba.co.jp/ 1. Classification of Power Supply ICs Regulator ICs C O N T E N T S 1.Classification of Power Supply ICs 2 2.New Products 4 TA78xxLF/LS Series Under development


    Original     		PDF BCE0002A TA78xxLF/LS TA48LxxF/ TA76432FT TA76433FC TA48SxxF TA78xxF/S/SB, TA78MxxF/S/SB, TA78LxxAP/F/S, TA78033LS TA7084AM ta7084 TA7085AM TA7804LS TA7086M TA78LxxAP TA76432s 4v TA7805LF TA78012AP

    GT50J101

    Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
    Text: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive


    Original     		PDF

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    2-10U1B

    Abstract: TO92-MOD PACKAGE DIMENSIONS TO-3P 2-10P1B 2-10r1b 3p transistor 2-10S2B 2-7J1B
    Text: [ 7 ] Package Dimensions [ 7 ] Package Dimensions [ 7 ] Package Dimensions Unit: mm POWER-MINI SOT-89 TO92-MOD 2-5K1B 2-5J1C TPS PW-MOLD (straight) 2-8M1B 2-7B1B 1349 [ 7 ] Package Dimensions Unit: mm PW-MOLD (lead formed) DP (straight) 2-7J1B 2-7B5B DP (lead forming)


    Original     		PDF OT-89) O92-MOD O-220AB O-220SIS 2-10P1B 2-10U1B O-220 O-220FL 2-10R1B 2-10S1B 2-10U1B TO92-MOD PACKAGE DIMENSIONS TO-3P 2-10P1B 2-10r1b 3p transistor 2-10S2B 2-7J1B

    Power MOSFET, toshiba

    Abstract: 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567
    Text: Power MOSFET Power MOSFETs - Middle & High Voltage Series VDSS≥100V - Aug. 2003 Toshiba Corporation Semiconductor Company DP0530019_01 Copyright 2003 Toshiba Corporation. All rights reserved. 1 Power MOSFET Middle & High Voltage Power MOSFET 1) π-MOS (Trench Gate Power MOSFET) series


    Original     		PDF VDSS100V) DP0530019 O-220SIS Power MOSFET, toshiba 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    TB62501F

    Abstract: tb62501 tb6808f TA78033LS TA1319AP TB62207BFG TD62C854AF ta1319 TA7804LS TB62207
    Text: General-Purpose Linear ICs Operational Amplifier ICs & Comparator ICs z 118 Intelligent Power Devices IPD z 122 Interface Drivers z 125 Motor Drivers z 130 Power Supply ICs z 134 Small-Signal MMICs (High-Frequency Cell-pack) z 142 117 Operational Amplifier ICs & Comparator ICs


    Original     		PDF TA75S393F TA75S01F TA75S558F 22dBmW TG2213S 17dBmW TG2214S TG2213S. TG2216TU TB62501F tb62501 tb6808f TA78033LS TA1319AP TB62207BFG TD62C854AF ta1319 TA7804LS TB62207

    Sine wave PWM DC to AC Inverter ics

    Abstract: ULN2803 PIN CONFIGURATION TA8316S tc9653an HIGH VOLTAGE DIODE for microwave ovens ta7606p induction heating ta8316s TLP250 low side pwm driver relay driver ic ULN2803 2SK3201
    Text: Peripheral ICs Peripheral ICs for Home Appliances Toshiba offers a complete lineup of peripheral ICs for home appliances in various application fields as shown in the table below. Timer ICs Device TA7326P TA7326F TA7327P TB1004AF TB1010F TB1012F TB1022F Package


    Original     		PDF TA7326P TA7326F TA7327P TB1004AF TB1010F TB1012F TB1022F TA7327P SSOP10 GT60M303 Sine wave PWM DC to AC Inverter ics ULN2803 PIN CONFIGURATION TA8316S tc9653an HIGH VOLTAGE DIODE for microwave ovens ta7606p induction heating ta8316s TLP250 low side pwm driver relay driver ic ULN2803 2SK3201

    teccor thyristor s4015l

    Abstract: thyristor S6065K SK055R S8040N thyristor 325 V 8A ,THYRISTOR s2065j s401e Thyristor thyristor S8020L SK025N S4010R
    Text: l Se ec ag * es ED Z NI G 39 CO 716 E R #E te L. U. k ac d P le Fi E6 TO-263 D 2 Pak TO-92 TO-218 TO-252 D-Pak TO-202 TO-218X 3-Leaded Surface Mount Compak TO-220 MT2 MT1 TO-251 V-Pak G SCRs 1 A to 70 A E6 General Description The Teccor line of thyristor SCR semi-conductors are half-wave,


    Original     		PDF O-263 O-218 O-252 O-202 O-218X O-220 O-251 teccor thyristor s4015l thyristor S6065K SK055R S8040N thyristor 325 V 8A ,THYRISTOR s2065j s401e Thyristor thyristor S8020L SK025N S4010R

    SCR s8040r

    Abstract: S8016N S8020L ES35A SK025N S4010R
    Text: l Se ec ag * es ED Z NI E6 G 39 CO 716 E R #E te L. U. k ac d P le Fi TO-263 D 2 Pak TO-92 TO-218 TO-252 D-Pak TO-202 TO-218X 3-lead Compak TO-220 TO-251 V-Pak A K G SCRs 1 A to 70 A E6 General Description The Teccor line of thyristor SCR semi-conductors are half-wave,


    Original     		PDF O-263 O-218 O-252 O-202 O-218X O-220 O-251 SCR s8040r S8016N S8020L ES35A SK025N S4010R

    2SK1649

    Abstract: 2SK537 2SK1349 2SK1377 2sk538 2SK788 2SK1513 2SK1723 2SK889 2SK941
    Text: Power MOS FET Lineup [Characteristics Chart] 6. L2-7T-M0S III V dss = 60— 10OV type Low Voltage Series Operable at Logic Level. Maximum ratings (A) 0.8 0.8 5 -5 Voss (V) Package Pd (W) Ros(ON) (Q) Vos (V) TYP. MAX. 60 0.5 POWER-MINI 0.40 0.55 10 60 0.9 TO-92MOD


    OCR Scan     		PDF 2SK1078 2SK940 2SK1112 2SJ183 2SK1114 2SK1344 2SK1768 2SK1115 2SK1345 2SK942 2SK1649 2SK537 2SK1349 2SK1377 2sk538 2SK788 2SK1513 2SK1723 2SK889 2SK941

    2SK1118

    Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
    Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531


    OCR Scan     		PDF 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220

    K2312

    Abstract: j378 K2314
    Text: L2-7c-MOS V Maximum Rating Application Type No. Id A DC/DC Converter High Current Switching Motor Drive 2SJ360 “2SJ377 •2SJ378 2SJ349 2SJ334 2SJ360 2SK2229 2SK2231 2SK2232 2SK 2311 2SK2233 2SK2266 •2SK2312 •2SK2173 '2SK 2313 '2SK 2267 2SK2200 2SK2201


    OCR Scan     		PDF O-220 T0-220 O-220FL/SM O-220AB 2SJ360 2SJ377 K2312 j378 K2314

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


    OCR Scan     		PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753

    TA78L008AP

    Abstract: A78L05 A78L 78LXX
    Text: Voltage Regulators 1C 3-Terminal Regulators 1 Function Type No. TA78DS05BP 5 TA78DS06BP 6 TA78DS08BP TA78DS09BP TA78DS10BP Low output current Low dropout 8 9 TA78DS12BP 12 TA78DS15BP 15 TA78DS05F 5 TA78DS06F 6 TA78DS08F Low output current 8 TA70DSO9F Low dropout


    OCR Scan     		PDF TA78DS05BP TA78DS06BP TA78DS08BP TA78DS09BP TA78DS10BP TA78DS12BP TA78DS15BP TA78DS05F TA78DS06F TA78DS08F TA78L008AP A78L05 A78L 78LXX

    2Sj148

    Abstract: 2sd1408 2SK364 2sc3281 2sc4793 2SK366 2SC3180N
    Text: Power Amplifier Type No. Ic VcEO Pc fr NPN PNP A (V) (W) (MHz) 2SC2705 2SA1145 0.05 150 0.8 200 5 10m P.D 2SC1627A 2SA817A 0.4 80 0.8 100 10 10m P.D 2SC2235 2SA965 0.8 120 0.9 120 5 0.1 P.D D.O(3W) TYP Vce (V) * Application le (A) 2SC2236 2SA966 1.5 30 0.9


    OCR Scan     		PDF 2SC2705 2SC1627A 2SC2235 2SC2236 2SC3423 2SC3419 2SC3421 2SC3422 2SD880 2SD525 2Sj148 2sd1408 2SK364 2sc3281 2sc4793 2SK366 2SC3180N

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    78H05-78H24

    Abstract: 78H12 78H06 78H08 78H18 CD 7805 78H05 7805 T092 78h24 78los
    Text: ' I LINEAR INTEGRATED CIRCUITS 3 - TERMINAL VOLTAGE REGULATORS .1A Poa. 78L05-78L24 1 AMP Poa. 1 1 AMP Heg. ì .SA Poa. 7805-7824 | 7905-7924 \ 78M05-78M24 ThctimX resistance Rj-c RJ-a 5°c/w 70°c/w Power Dissipation 7°c/v I00°c/v 2 OH Temperature range


    OCR Scan     		PDF 78H05-78H24 78L05-78L24 500MH O-220 T0-92 78H05 78H06 78H08" 78H12 78M15 78H05-78H24 78H08 78H18 CD 7805 7805 T092 78h24 78los