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    Untitled

    Abstract: No abstract text available
    Text: KTA1266 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS ltd , TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION FEATURES *ExceUent Hfe Linearity :Hfe 2 =80(Typ) at Vce=-6V, Ic=-150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mA>0.95(Typ).


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    PDF KTA1266 -150mA. toKTC3198 -100uA cb-50V -150mA -100mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: P a KTA1266L SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA POT EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER APPLICATION FEATURES .Excellent Hfe Linearity :Hfe 2 =80(Typ) atVce=-6V, Ic=-150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mA)=0.95(Typ).


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    PDF KTA1266L -150mA. toKTC3198L -100uA -150mA -100mA -10mA