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    TOSHIBA K2746 Search Results

    TOSHIBA K2746 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA K2746 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K2746 Transistor

    Abstract: K2746 toshiba k2746 TOSHIBA K2746 toshiba marking code transistor K2746 toshiba transistor k2746 toshiba 2-16c1b
    Text: 2SK2746 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2746 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.3 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.0 S (typ.)


    Original     		2SK2746 K2746 Transistor K2746 toshiba k2746 TOSHIBA K2746 toshiba marking code transistor K2746 toshiba transistor k2746 toshiba 2-16c1b PDF

    K2746 Transistor

    Abstract: k2746 toshiba transistor k2746 TOSHIBA K2746 K2746 toshiba toshiba marking code transistor K2746
    Text: 2SK2746 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2746 DC−DC Converter and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 1.3 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.0 S (typ.)


    Original     		2SK2746 K2746 Transistor k2746 toshiba transistor k2746 TOSHIBA K2746 K2746 toshiba toshiba marking code transistor K2746 PDF

    K2746 Transistor

    Abstract: K2746 K2746 toshiba toshiba transistor k2746 2SK2746 toshiba marking code transistor K2746 TOSHIBA K2746 k2746 1 toshiba
    Text: 2SK2746 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2746 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.3 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.0 S (typ.)


    Original     		2SK2746 K2746 Transistor K2746 K2746 toshiba toshiba transistor k2746 2SK2746 toshiba marking code transistor K2746 TOSHIBA K2746 k2746 1 toshiba PDF

    k2746

    Abstract: K2746 Transistor K2746 toshiba TOSHIBA K2746 toshiba marking code transistor K2746 2SK2746
    Text: 2SK2746 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2746 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance : |Yfs| = 5.0 S (typ.)


    Original     		2SK2746 150oducts k2746 K2746 Transistor K2746 toshiba TOSHIBA K2746 toshiba marking code transistor K2746 2SK2746 PDF

    k2746

    Abstract: K2746 Transistor K2746 toshiba toshiba marking code transistor K2746 toshiba transistor k2746 2SK2746 TOSHIBA K2746
    Text: 2SK2746 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2746 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.3 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.0 S (typ.)


    Original     		2SK2746 k2746 K2746 Transistor K2746 toshiba toshiba marking code transistor K2746 toshiba transistor k2746 2SK2746 TOSHIBA K2746 PDF