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    TOSHIBA MG200Q2YS50 Search Results

    TOSHIBA MG200Q2YS50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA MG200Q2YS50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Mg200q2ys50

    Abstract: MG200 toshiba MG200Q2YS50
    Text: MG200Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive Load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode


    Original     		PDF MG200Q2YS50 2-109C4A 140transportation Mg200q2ys50 MG200 toshiba MG200Q2YS50

    MG200Q2YS50

    Abstract: toshiba MG200Q2YS50
    Text: MG200Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max.)


    Original     		PDF MG200Q2YS50 2-109C4A MG200Q2YS50 toshiba MG200Q2YS50

    IGBT cross reference semikron eupec

    Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
    Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130


    Original     		PDF DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40

    IGBT cross reference semikron eupec

    Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
    Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130


    Original     		PDF DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40

    toshiba MG200Q2YS50

    Abstract: MG200Q2YS50
    Text: TO SHIBA MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2 YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode


    OCR Scan     		PDF MG200Q2YS50 200Q2 10//s toshiba MG200Q2YS50 MG200Q2YS50

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)


    OCR Scan     		PDF MG200Q2YS50

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG200Q2YS50 TjS125Â

    transistor JSW

    Abstract: toshiba srf
    Text: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG200Q2YS50 transistor JSW toshiba srf