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    TOSHIBA NAND 2014 Search Results

    TOSHIBA NAND 2014 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA NAND 2014 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74VHC00F/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC00F, TC74VHC00FT, TC74VHC00FK Quad 2-Input NAND Gate TC74VHC00F The TC74VHC00 is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology.


    Original     		TC74VHC00F/FT/FK TC74VHC00F, TC74VHC00FT, TC74VHC00FK TC74VHC00F TC74VHC00 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74VHC20F/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC20F, TC74VHC20FT, TC74VHC20FK Dual 4-Input NAND Gate TC74VHC20F The TC74VHC20 is an advanced high speed CMOS 4-INPUT NAND GATE fabricated with silicon gate C2MOS technology.


    Original     		TC74VHC20F/FT/FK TC74VHC20F, TC74VHC20FT, TC74VHC20FK TC74VHC20F TC74VHC20 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74VHCT00AF/AFT/AFK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHCT00AF, TC74VHCT00AFT, TC74VHCT00AFK Quad 2-Input NAND Gate TC74VHCT00AF The TC74VHCT00A is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology.


    Original     		TC74VHCT00AF/AFT/AFK TC74VHCT00AF, TC74VHCT00AFT, TC74VHCT00AFK TC74VHCT00AF TC74VHCT00A PDF

    Untitled

    Abstract: No abstract text available
    Text: TH58NYG4S0FBAID TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 16 GBIT 2G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NYG4S0F is a single 1.8V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.


    Original     		TH58NYG4S0FBAID TH58NYG4S0F 4328-byte 2014-03-12C PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74AC10P/F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC10P, TC74AC10F Triple 3-Input NAND Gate The TC74AC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology.


    Original     		TC74AC10P/F TC74AC10P, TC74AC10F TC74AC10 TC74AC10P PDF

    TC4011BP

    Abstract: No abstract text available
    Text: TC4011BP/BF/BFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4011BP, TC4011BF, TC4011BFT TC4011B Quad 2 Input NAND Gate The TC4011B is 2-input positive logic NAND gate respectively. Since all the outputs of these gates are provided with the


    Original     		TC4011BP/BF/BFT TC4011BP, TC4011BF, TC4011BFT TC4011B TC4011BP TC4011BF DIP14-P-300-2 TC4011BP PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74ACT00P/F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74ACT00P, TC74ACT00F, TC74ACT00FT Quad 2-Input NAND Gate The TC74ACT00 is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology.


    Original     		TC74ACT00P/F/FT TC74ACT00P, TC74ACT00F, TC74ACT00FT TC74ACT00 TC74ACT00P TC74ACT00F PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74AC00P/F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC00P, TC74AC00F, TC74AC00FT Quad 2-Input NAND Gate The TC74AC00 is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology.


    Original     		TC74AC00P/F/FT TC74AC00P, TC74AC00F, TC74AC00FT TC74AC00 TC74AC00F TC74AC00P PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74HC00AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC00AP, TC74HC00AF Quad 2-Input NAND Gate The TC74HC00A is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent


    Original     		TC74HC00AP/AF TC74HC00AP, TC74HC00AF TC74HC00A TC74HC00AP PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74VHC10F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC10F, TC74VHC10FT Triple 3-Input NAND Gate TC74VHC10F The TC74VHC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent


    Original     		TC74VHC10F/FT TC74VHC10F, TC74VHC10FT TC74VHC10F TC74VHC10 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74HC03AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC03AP, TC74HC03AF Quad 2-Input NAND Gate open drain The TC74HC03A is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent


    Original     		TC74HC03AP/AF TC74HC03AP, TC74HC03AF TC74HC03A TC74HC00A. PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74HC132AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC132AP, TC74HC132AF Quad 2-Input Schmitt NAND Gate The TC74HC132A is a high speed CMOS 2-INPUT NAND SCHMITT TRIGGER GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent


    Original     		TC74HC132AP/AF TC74HC132AP, TC74HC132AF TC74HC132A TC74HC00A TC74HC132AP PDF

    Untitled

    Abstract: No abstract text available
    Text: TC4093BP/BF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4093BP, TC4093BF TC4093B Quad 2-Input NAND Schmitt Triggers The TC4093B is a quad 2-input NAND gate having Schmitt trigger function for all the input terminals. Since the circuit threshold voltage varies with rising time and


    Original     		TC4093BP/BF TC4093BP, TC4093BF TC4093B TC4011B TC4093BP DIP14-P-300-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74AC20P/F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC20P, TC74AC20F Dual 4-Input NAND Gate The TC74AC20 is an advanced high speed CMOS 4-INPUT NAND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves the high speed operation similar to equivalent


    Original     		TC74AC20P/F TC74AC20P, TC74AC20F TC74AC20 TC74AC20P PDF

    Untitled

    Abstract: No abstract text available
    Text: TC7WZ00FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WZ00FU, TC7WZ00FK Dual 2-Input NAND Gate TC7WZ00FU Features • High output current • Super high speed operation : tpd = 2.4 ns typ. at VCC = 5 V, 50 pF • Operating voltage range


    Original     		TC7WZ00FU/FK TC7WZ00FU, TC7WZ00FK TC7WZ00FU TC74LCX PDF

    Untitled

    Abstract: No abstract text available
    Text: TC7SG00FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG00FE 2-Input NAND Gate Features • High output current • Super high speed operation : tpd = 2.5 ns typ. at VCC = 3.3 V,15pF • Operating voltage range • 5.5-V tolerant inputs.


    Original     		TC7SG00FE PDF

    Untitled

    Abstract: No abstract text available
    Text: TC7SZ00FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ00FE 2-Input NAND Gate Features • High output current • Super high speed operation : tpd = 2.4 ns typ. at VCC = 5 V, 50pF • Operating voltage range • 5.5-V tolerant inputs


    Original     		TC7SZ00FE TC74LCX PDF

    Untitled

    Abstract: No abstract text available
    Text: TC7WH00FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WH00FU, TC7WH00FK Dual 2-Input NAND Gate TC7WH00FU Features • High speed operation : tpd = 3.7ns typ. at VCC = 5 V, CL = 15pF • Low power dissipation : ICC = 2 A (max) at Ta = 25°C


    Original     		TC7WH00FU/FK TC7WH00FU, TC7WH00FK TC7WH00FU TC7W00 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC7SH00F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH00F, TC7SH00FU 2-Input NAND Gate TC7SH00F Features • High speed operation : tpd = 3.7ns typ. at VCC = 5V, 15pF • Low power dissipation : ICC = 2 A (max) at Ta = 25°C • 5.5-V tolerant inputs


    Original     		TC7SH00F/FU TC7SH00F, TC7SH00FU TC7SH00F PDF

    Untitled

    Abstract: No abstract text available
    Text: TC7SZ38F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ38F, TC7SZ38FU 2-Input NAND Gate Open Drain Output Features TC7SZ38F • High output current: 24 mA (min) @VCC = 3 V • Super high speed operation: tpz = 2.2 ns (typ.) @VCC = 5 V, 50 pF


    Original     		TC7SZ38F/FU TC7SZ38F, TC7SZ38FU TC7SZ38F TC74LCX PDF

    Untitled

    Abstract: No abstract text available
    Text: TC7SZ00AFS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ00AFS 2-Input NAND Gate Features • High output current • Super high speed operation : tpd = 2.4 ns typ. :±24 mA (min) at VCC = 3 V at VCC = 5 V, 50 pF • Operating voltage range


    Original     		TC7SZ00AFS PDF

    Untitled

    Abstract: No abstract text available
    Text: TC7SZ00F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ00F, TC7SZ00FU 2-Input NAND Gate Features TC7SZ00F • High output current • Super high speed operation : tpd = 2.4 ns typ. : ±24 mA (min) at VCC = 3 V at VCC = 5 V, 50 pF •


    Original     		TC7SZ00F/FU TC7SZ00F, TC7SZ00FU TC7SZ00F TC74LCX PDF

    Untitled

    Abstract: No abstract text available
    Text: TC7WH00FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WH00FC Dual 2-Input NAND Gate TC7WH00FC Features • High speed operation : tpd = 3.7ns typ. at VCC = 5 V, CL = 15pF • Low power dissipation : ICC = 2 A (max) at Ta = 25°C • High noise immunity


    Original     		TC7WH00FC PDF

    Untitled

    Abstract: No abstract text available
    Text: TC7SH00FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH00FE 2-Input NAND Gate Features • High speed operation : tpd = 3.7ns typ. at VCC = 5V, 15pF : ICC = 2 A (max) at Ta = 25°C • Low power dissipation • Wide operating voltage range : VCC = 2 to 5.5V


    Original     		TC7SH00FE PDF