TOSHIBA TRANSISTOR K2608 Search Results

TOSHIBA TRANSISTOR K2608 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TOSHIBA TRANSISTOR K2608 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K2608 Abstract: No abstract text available Text: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSIII 2SK2608 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 3.73 High forward transfer admittance : \|Yfs\|= 2.6 S (typ.) (typ.) Low leakage current	Original	2SK2608 K2608	PDF
transistor k2608 Abstract: K2608 toshiba transistor k2608 2sk2608 Text: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) High forward transfer admittance : \|Yfs\|= 2.6 S (typ.) Low leakage current	Original	2SK2608 transistor k2608 K2608 toshiba transistor k2608 2sk2608	PDF
K2608 Abstract: transistor k2608 2SK2608 equivalent 2-10P1B 2SK2608 Text: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : \|Yfs\|= 2.6 S (typ.) z Low leakage current	Original	2SK2608 K2608 transistor k2608 2SK2608 equivalent 2-10P1B 2SK2608	PDF
transistor k2608 Abstract: K2608 2sk2608 Text: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : \|Yfs\|= 2.6 S (typ.) z Low leakage current	Original	2SK2608 transistor k2608 K2608 2sk2608	PDF
transistor k2608 Abstract: K2608 2-10P1B 2SK2608 Text: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : \|Yfs\|= 2.6 S (typ.) z Low leakage current	Original	2SK2608 transistor k2608 K2608 2-10P1B 2SK2608	PDF