TOSHIBA TRANSISTOR K3911 Search Results

TOSHIBA TRANSISTOR K3911 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TOSHIBA TRANSISTOR K3911 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
k3911 Abstract: toshiba transistor k3911 2SK3911 equivalent 2SK3911 transistor 2SK3911 K3911 TOSHIBA SC-65 transistor K3911 "k3911" Text: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) High forward transfer admittance: \|Yfs\| = 11 S (typ.)	Original	2SK3911 k3911 toshiba transistor k3911 2SK3911 equivalent 2SK3911 transistor 2SK3911 K3911 TOSHIBA SC-65 transistor K3911 "k3911"	PDF
transistor 2SK3911 Abstract: No abstract text available Text: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: \|Yfs\| = 11 S (typ.)	Original	2SK3911 transistor 2SK3911	PDF
k3911 Abstract: toshiba transistor k3911 2SK3911 2SK3911 equivalent K3911 TOSHIBA transistor 2SK3911 SC-65 "k3911" Text: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: \|Yfs\| = 11 S (typ.)	Original	2SK3911 15oducts k3911 toshiba transistor k3911 2SK3911 2SK3911 equivalent K3911 TOSHIBA transistor 2SK3911 SC-65 "k3911"	PDF
toshiba transistor k3911 Abstract: K3911 TOSHIBA transistor 2SK3911 K3911 transistor K3911 2SK3911 SC-65 "k3911" Text: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: \|Yfs\| = 11 S (typ.)	Original	2SK3911 toshiba transistor k3911 K3911 TOSHIBA transistor 2SK3911 K3911 transistor K3911 2SK3911 SC-65 "k3911"	PDF
toshiba transistor k3911 Abstract: k3911 K3911 TOSHIBA Text: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) High forward transfer admittance: \|Yfs\| = 11 S (typ.)	Original	2SK3911 toshiba transistor k3911 k3911 K3911 TOSHIBA	PDF
toshiba transistor k3911 Abstract: K3911 TOSHIBA k3911 "k3911" 2SK3911 transistor 2SK3911 25VDD Text: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: \|Yfs\| = 11 S (typ.)	Original	2SK3911 toshiba transistor k3911 K3911 TOSHIBA k3911 "k3911" 2SK3911 transistor 2SK3911 25VDD	PDF