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    TIPD144 Texas Instruments Comparator with Hysteresis Reference Design Visit Texas Instruments
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
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    Hynix Cross Reference

    Abstract: DDR400B DDR200 DDR333 DDR400
    Text: 1HY5DU12422C L TP HY5DU12822C(L)TP HY5DU121622C(L)TP Revision History Revision No. 1.0 History First Version Release Rev. 1.0 / Mar. 2005 Draft Date Remark Mar. 2005 2 1HY5DU12422C(L)TP HY5DU12822C(L)TP HY5DU121622C(L)TP DESCRIPTION The HY5DU12422C(L)TP, HY5DU12822C(L)TP and HY5DU121622C(L)TP are a 536,870,912-bit CMOS Double Data


    Original     		1HY5DU12422C HY5DU12822C HY5DU121622C HY5DU12422C 912-bit Hynix Cross Reference DDR400B DDR200 DDR333 DDR400 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY5DU56422D L TP HY5DU56822D(L)TP HY5DU561622D(L)TP 256Mb DDR SDRAM HY5DU56422D(L)TP HY5DU56822D(L)TP HY5DU561622D(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		HY5DU56422D HY5DU56822D HY5DU561622D 256Mb 1HY5DU56422D PDF

    DDR200

    Abstract: DDR400 DDR400B
    Text: HY5DU12422B L TP HY5DU12822B(L)TP HY5DU121622B(L)TP 512Mb DDR SDRAM HY5DU12422B(L)TP HY5DU12822B(L)TP HY5DU121622B(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		HY5DU12422B HY5DU12822B HY5DU121622B 512Mb 1HY5DU12422B DDR200 DDR400 DDR400B PDF

    DDR200

    Abstract: DDR400 DDR400B
    Text: HY5DU12422B L TP HY5DU12822B(L)TP HY5DU121622B(L)TP 512Mb DDR SDRAM HY5DU12422B(L)TP HY5DU12822B(L)TP HY5DU121622B(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		HY5DU12422B HY5DU12822B HY5DU121622B 512Mb 1HY5DU12422B DDR200 DDR400 DDR400B PDF

    DDR200

    Abstract: DDR333 DDR400 DDR400B
    Text: HY5DU56422D L TP HY5DU56822D(L)TP HY5DU561622D(L)TP 256Mb DDR SDRAM HY5DU56422D(L)TP HY5DU56822D(L)TP HY5DU561622D(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		HY5DU56422D HY5DU56822D HY5DU561622D 256Mb 1HY5DU56422D DDR200 DDR333 DDR400 DDR400B PDF

    DDR200

    Abstract: DDR333 DDR400 DDR400B 32Mx16
    Text: 512Mb DDR SDRAM HY5DU12422C L TP HY5DU12822C(L)TP HY5DU121622C(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		512Mb HY5DU12422C HY5DU12822C HY5DU121622C 1HY5DU12422C DDR200 DDR333 DDR400 DDR400B 32Mx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: 512Mb DDR SDRAM HY5DU12422C L TP HY5DU12822C(L)TP HY5DU121622C(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		512Mb HY5DU12422C HY5DU12822C HY5DU121622C 1HY5DU12422C PDF

    DDR4

    Abstract: DDR200 DDR333 DDR400 DDR400B HY5DU121622CLTP
    Text: 512Mb DDR SDRAM HY5DU12422C L TP HY5DU12822C(L)TP HY5DU121622C(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		512Mb HY5DU12422C HY5DU12822C HY5DU121622C 1HY5DU12422C DDR4 DDR200 DDR333 DDR400 DDR400B HY5DU121622CLTP PDF

    HY5DU121622C(D)TP

    Abstract: DDR200 DDR333 DDR400 DDR400B
    Text: 512Mb DDR SDRAM HY5DU12422C L TP HY5DU12822C(L)TP HY5DU121622C(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		512Mb HY5DU12422C HY5DU12822C HY5DU121622C 1HY5DU12422C DDR400B HY5DU121622C(D)TP DDR200 DDR333 DDR400 PDF

    Untitled

    Abstract: No abstract text available
    Text: 512Mb DDR SDRAM HY5DU12422C L TP HY5DU12822C(L)TP HY5DU121622C(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		512Mb HY5DU12422C HY5DU12822C HY5DU121622C 1HY5DU12422C DDR400B HY5DU128= PDF

    DDR200

    Abstract: DDR333 DDR400 DDR400B
    Text: 512Mb DDR SDRAM HY5DU12422C L TP HY5DU12822C(L)TP HY5DU121622C(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		512Mb HY5DU12422C HY5DU12822C HY5DU121622C 1HY5DU12422C DDR200 DDR333 DDR400 DDR400B PDF

    Untitled

    Abstract: No abstract text available
    Text: 512Mb DDR SDRAM HY5DU12422C L TP-xI HY5DU12822C(L)TP-xI HY5DU121622C(L)TP-xI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		512Mb HY5DU12422C HY5DU12822C HY5DU121622C 1HY5DU12422C DDR400B PDF

    Untitled

    Abstract: No abstract text available
    Text: 512Mb DDR SDRAM HY5DU12422C L TP-xI HY5DU12822C(L)TP-xI HY5DU121622C(L)TP-xI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		512Mb HY5DU12422C HY5DU12822C HY5DU121622C 1HY5DU12422C PDF

    DDR200

    Abstract: DDR333 DDR400 DDR400B
    Text: 512Mb DDR SDRAM HY5DU12422C L TP-xI HY5DU12822C(L)TP-xI HY5DU121622C(L)TP-xI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		512Mb HY5DU12422C HY5DU12822C HY5DU121622C 1HY5DU12422C DDR200 DDR333 DDR400 DDR400B PDF

    HY5DU121622DTP

    Abstract: HY5DU12822D hy5du121622DT hy5du12822dtp HY5DU121622 DDR266 DDR333 DDR400 DDR400B HY5DU121622D
    Text: 512Mb DDR SDRAM HY5DU12822D L TP HY5DU121622D(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		512Mb HY5DU12822D HY5DU121622D HY5DU12822DTP HY5DU121622DTP HY5DU12822DT HY5DU121622DT 912-bit HY5DU121622DTP hy5du12822dtp HY5DU121622 DDR266 DDR333 DDR400 DDR400B PDF

    HY5DU561622F

    Abstract: DDR200 DDR266A DDR266B DDR333 DDR400 DDR400B DDR500
    Text: 256Mb DDR SDRAM HY5DU56822F L TP HY5DU561622F(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		256Mb HY5DU56822F HY5DU561622F 456-bit DDR200 DDR266A DDR266B DDR333 DDR400 DDR400B DDR500 PDF

    HY5DU561622F

    Abstract: HY5DU561622FLTP DDR200 DDR266A DDR266B DDR333 DDR400 DDR400B DDR500
    Text: 256Mb DDR SDRAM HY5DU56822F L TP HY5DU561622F(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		256Mb HY5DU56822F HY5DU561622F 456-bit HY5DU561622FLTP DDR200 DDR266A DDR266B DDR333 DDR400 DDR400B DDR500 PDF

    DDR200

    Abstract: DDR266A DDR266B DDR333 DDR400 DDR400B HY5DU561622E HY5DU56822E 456B
    Text: 256Mb DDR SDRAM HY5DU56822E L TP HY5DU561622E(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		256Mb HY5DU56822E HY5DU561622E DDR200 DDR266A DDR266B DDR333 DDR400 DDR400B 456B PDF

    DDR200

    Abstract: DDR266A DDR266B DDR333 DDR400 DDR400B HY5DU561622E HY5DU56822E
    Text: 256Mb DDR SDRAM HY5DU56822E L TP HY5DU561622E(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		256Mb HY5DU56822E HY5DU561622E 456-bit DDR200 DDR266A DDR266B DDR333 DDR400 DDR400B PDF

    hy5du

    Abstract: HY5DU561622E HY5DU56822E hy5du561622eltp DDR200 DDR266A DDR266B DDR333 DDR400 DDR400B
    Text: 256Mb DDR SDRAM HY5DU56822E L TP HY5DU561622E(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		256Mb HY5DU56822E HY5DU561622E DDR400B hy5du hy5du561622eltp DDR200 DDR266A DDR266B DDR333 DDR400 PDF

    DDR200

    Abstract: DDR266A DDR266B DDR333 DDR400 DDR400B DDR500 HY5DU561622F
    Text: 256Mb DDR SDRAM HY5DU56822F L TP-xxI HY5DU561622F(L)TP-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		256Mb HY5DU56822F HY5DU561622F 456-bit DDR200 DDR266A DDR266B DDR333 DDR400 DDR400B DDR500 PDF

    IRF-520 Mosfet

    Abstract: cell phone charger 3.7 VDC cost of logic pulser TN0520N3 IRF P CHANNEL MOSFET logic pulser cost pioneer mosfet VN1210N5 VN0220N3 5V to 240V relay ic
    Text: TN/TP Series Applications TN/TP Series Application Note AN–D2 3 Low-Threshold MOSFETs: Structure, Performance and Applications Punch-through is defined as the drain voltage needed to create an electric field connecting the drain and source, as shown in Figure


    Original     		TN0524N3 IRF-520 Mosfet cell phone charger 3.7 VDC cost of logic pulser TN0520N3 IRF P CHANNEL MOSFET logic pulser cost pioneer mosfet VN1210N5 VN0220N3 5V to 240V relay ic PDF

    MTP3N08

    Abstract: MTP3N08L 3N08L
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M TP 3N 08L M TP 3N 10L Designer's Data Sheet Power Field Effect Transistor IM-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FETs LOGIC LEVEL 3 AMPERES These Logic Level TM O S Power FETs are designed fo r high


    OCR Scan     		TP3N08U0L MTP3N08 MTP3N08L 3N08L PDF

    z732

    Abstract: No abstract text available
    Text: EL 6 EL 6 O u tp u t P e n to d e max 52 This is another 18 W, indirectly-heated, high conductance o u tp u t pentode, the need for which arose from a dem and for a “ larger” o u tp u t valve which, fully excited, w ould tak e ab o u t th e sam e grid


    OCR Scan     		PDF