MTP3N6
Abstract: No abstract text available
Text: r r z S G S -T H O M S O N *7# » » E tL ie T O K f ! MTP3N60 TP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S on M TP3N60 M TP3N60FI 600 V 600 V 2.5 ß 2.5 Q 3 A 2.5 A • HIGH VO LTAG E FOR OFF-LINE APPLICATIO NS
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MTP3N60
MTP3N60FI
TP3N60
TP3N60FI
100KHz
ATT22Q
500ms
MTP3N6
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Untitled
Abstract: No abstract text available
Text: * 5 SGS-THOMSON ilLiCTIKMDe 7 mTP3N60 TP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V M TP3N60 M TP3N60FI • . . ■ ■ dss 600 V 600 V R DS on Id < 2.5 a < 2.5 a 3.9 A 2.5 A TYPICAL RDS(on) = 2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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mTP3N60
MTP3N60FI
TP3N60
TP3N60FI
MTP3N60FI
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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mtp3n
Abstract: TP3N60 A1412
Text: Si TYPE . MTP3N60 TP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss MTP3N60 TP3N60FI . . . . SGS-THOMSON ELiOT ö«S Id R üSion 600 V 600 V 2.5 2.5 ii il 3.9 A 2.5 A AVALANCHE RUG G EDN ESS TECHNO LO GY 100% AVALANCHE TESTED R EPETITIVE AVALANCHE DATA AT 100°C
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MTP3N60
MTP3N60FI
MTP3N60/FI
mtp3n
TP3N60
A1412
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