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    TPCA8101 Search Results

    TPCA8101 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPCA8101 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPCA8101 Toshiba Silicon N Channel MOS Type (Ultra High speed U-MOSIII) Original PDF

    TPCA8101 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TPCA8101

    Abstract: No abstract text available
    Text: TPCA8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅢ TPCA8101 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 5.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 60S (typ.)


    Original     		TPCA8101 TPCA8101 PDF

    TPCA8101

    Abstract: TPCA
    Text: TPCA8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅢ TPCA8101 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 5.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 60S (typ.)


    Original     		TPCA8101 TPCA8101 TPCA PDF

    TPCA8101

    Abstract: No abstract text available
    Text: TPCA8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅢ TPCA8101 Lithium Ion Battery Applications Notebook PC Applications 0.5±0.1 Unit: mm Low drain-source ON resistance: RDS (ON) = 5.5mΩ (typ.) High forward transfer admittance: |Yfs| = 60S (typ.)


    Original     		TPCA8101 TPCA8101 PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 PDF

    2 input nand gate 24v

    Abstract: TPCA8103 ARM10 ARM1026EJ TPCA8101 TPCA8102 2 input nor gate 24v
    Text: VOLUME 135 東芝半導体情報誌アイ 2003年10月号 CONTENTS 10 INFORMATION •エム・システムズ社と データストレージ製品で包括提携 .P2 ■高性能マイクロプロセッサ・コア 「ARM1026EJ-S」のライセンスを取得 .P2


    Original     		ARM1026EJ-S 03-3457-3405FAX. ARM1026EJ-S ARM10 2 input nand gate 24v TPCA8103 ARM10 ARM1026EJ TPCA8101 TPCA8102 2 input nor gate 24v PDF

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent PDF

    2SK1603

    Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
    Text: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1


    Original     		BCE0017A 2SK1603 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078 PDF

    tpc8118 equivalent replacement

    Abstract: SSM3J307T Zener diode smd 071 A01
    Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		BCE0082A tpc8118 equivalent replacement SSM3J307T Zener diode smd 071 A01 PDF

    TPC8103

    Abstract: TPCS8210 application tpc8010 AD* SOP-8 TPCS8201 TPCS8206 tpc8109 tpc8102 tpc8204 tpc8207
    Text: [ 7 ] Superseded and Discontinued Product List [ 7 ] Superseded and Discontinued Product List [ 7 ] Superseded and Discontinued Product List 1. Superseded Products The following listed products are no longer being promoted in Toshiba’s marketing. Please refer to Recommended Replacement Part Number.


    Original     		TPC8001 TPC8010-H TPC8002 TPC8014 TPC8005-H TPC8109 TPC8201 TPC8209 TPC8202 TPC8208 TPC8103 TPCS8210 application tpc8010 AD* SOP-8 TPCS8201 TPCS8206 tpc8109 tpc8102 tpc8204 tpc8207 PDF

    2sk4110

    Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
    Text: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3


    Original     		BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent PDF