Untitled
Abstract: No abstract text available
Text: QSH29 Transistors Dual digital transistors QSH29 zFeatures In addition to the standard features of digital transistor, this transisitor has: 1 Low collector saturation voltage, typically VCE sat) =100mV for IC / IB=100mA / 1mA(Typ.) 2) High current gain, minimum
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QSH29
100mV
100mA
500mA
200mA.
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NE3505M04
Abstract: FL-240 NEC Ga FET marking L NE3505M04-T2 ne3505
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3505M04 L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz Reference Only
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NE3505M04
NE3505M04-T2
50pcs
Rn/50
NE3505M04
FL-240
NEC Ga FET marking L
NE3505M04-T2
ne3505
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NE3508M04
Abstract: Power Transisitor 100V 2A NE3508M04-A NE3508M04-T2 NE3508M04-T2-A transisitor 02 p 67
Text: PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold M04 package (Pb-Free T. )
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NE3508M04
NE3508M04-A
50pcs
NE3508M04-T2
NE3508M04-T2-A
NE3508M04
Power Transisitor 100V 2A
NE3508M04-A
NE3508M04-T2
NE3508M04-T2-A
transisitor 02 p 67
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Untitled
Abstract: No abstract text available
Text: BSS13 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition)
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BSS13
Freq350M
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Text: LM150PX Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A) Absolute Max. Power Diss. (W)175 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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LM150PX
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Abstract: No abstract text available
Text: 2SA1476 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)200m Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC) Maximum Operating Temp (øC)140 I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)
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2SA1476
Freq400M
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Abstract: No abstract text available
Text: FJ0707-28 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)55 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)14 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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FJ0707-28
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Text: PH1516-60 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)65â V(BR)CBO (V)65 I(C) Max. (A)10 Absolute Max. Power Diss. (W)116 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)4.0mx @V(CBO) (V) (Test Condition)26
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PH1516-60
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Text: FJ0880-28 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)55 I(C) Max. (A)20 Absolute Max. Power Diss. (W)175 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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FJ0880-28
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Abstract: No abstract text available
Text: PKB3005U Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)18 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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PKB3005U
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Text: 2N6104 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)65 I(C) Max. (A)4.5 Absolute Max. Power Diss. (W)36# Minimum Operating Temp (øC)-65õ Maximum Operating Temp (øC)150þ I(CBO) Max. (A)10m¥x @V(CBO) (V) (Test Condition)30
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2N6104
Freq400M
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Abstract: No abstract text available
Text: TP251 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)2.9 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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TP251
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Text: 35853B Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)125m Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition)
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Abstract: No abstract text available
Text: 2SC1561 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)55 I(C) Max. (A)500m Absolute Max. Power Diss. (W)7.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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Abstract: No abstract text available
Text: PH1090-175L Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)80â V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)375# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)13mx @V(CBO) (V) (Test Condition)45
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PH1090-175L
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Text: MRW2020 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)50â I(C) Max. (A)2.0 Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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MRW2020
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Abstract: No abstract text available
Text: PH3134-20L Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)63â V(BR)CBO (V) I(C) Max. (A)2.4 Absolute Max. Power Diss. (W)146# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.5x @V(CBO) (V) (Test Condition)40
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Abstract: No abstract text available
Text: MMBR951ALT1 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)322# Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10
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MMBR951ALT1
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Abstract: No abstract text available
Text: TP3098 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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TP3098
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Abstract: No abstract text available
Text: TPV657 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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TPV657
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Abstract: No abstract text available
Text: NE68130 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10
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NE68130
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Untitled
Abstract: No abstract text available
Text: CD2088 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)50â I(C) Max. (A)1.2 Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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CD2088
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Abstract: No abstract text available
Text: PNP EPITAXIAL SIUCON TRANSISTOR KSP2907A GENERAL PURPOSE TRANSISITOR • Collector-Emitter Voltage: V c e o = 6 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (T. =25°C) Characteristic Symbol Collector-Base Vbltage Collector-Em itter Voltage
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KSP2907A
625mW
KSP2907
150mA,
300/as,
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Untitled
Abstract: No abstract text available
Text: KSP2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISITOR • Collector-Emltter Voltage: V cto= 40V • Collector Dissipation: Pc m ax =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO VcEO -6 0 -4 0 -5 -600 625
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KSP2907
625mW
DDES173
D02S3
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