Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
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NE58219
2SC5004
2SC5004
NE58219-A
2SC5004-A
NE58219-T1-A
2SC5004-T1-A
perfor516
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NEC JAPAN 237 521 02
Abstract: transistor zo 607 2SC5004
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5004
2SC5004
NEC JAPAN 237 521 02
transistor zo 607
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transistor zo 607
Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
Text: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
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NE58219
2SC5004
2SC5004
NE58219
NE58219-T1
2SC5004-T1
transistor zo 607
zo 607 MA
2SC5004-T1
NE58219-T1
nec 237 521 02
NE582
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TRANSISTOR T 927
Abstract: 965 transistor transistor D 4515 transistor t13 transistor b 1655 0280 218 065 ASTM-D-4066 a 933 transistor ASTM-D4066
Text: 1662-2012:QuarkCatalogTempNew 9/14/12 7:45 AM Page 1662 POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 20 LED Spacers, Transistor Sockets, Kits and Insulators Transistor Mounting Kits TO-3 Transistor Sockets These pre-packaged universal mounting kits provide all the necessary hardware and insulators required to
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Shoulder66
T-13/4
TRANSISTOR T 927
965 transistor
transistor D 4515
transistor t13
transistor b 1655
0280 218 065
ASTM-D-4066
a 933 transistor
ASTM-D4066
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1046 UHF power LDMOS transistor Objective specification 1998 Apr 14 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF1046 PINNING - SOT467A FEATURES • High power gain PIN DESCRIPTION
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M3D381
BLF1046
BLF1046
OT467A
OT467A)
SCA59
125108/00/01/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Objective specification 1998 Mar 23 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF1047 PINNING - NO407 FEATURES • High power gain PIN DESCRIPTION
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M3D390
BLF1047
MBK765
BLF1047
NO407
NO407)
SCA57
125108/00/01/pp8
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AT42070
Abstract: transistor C200 AT-42070 S21E
Text: AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT‑42070 is housed in a hermetic, high reliability goldceramic 70 mil microstrip package. The 4 micron emitterto-emitter pitch enables this transistor to be used in many
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AT-42070
AT-42070
AT42070
5989-2654EN
AV02-1218EN
transistor C200
S21E
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT4126PT SURFACE MOUNT General Purpose Transistor VOLTAGE 25 Volts CURRENT 200 mAmpere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SOT-23 CONSTRUCTION * PNP Silicon Transistor
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CHT4126PT
OT-23
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CHT4126GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT4126GP SURFACE MOUNT General Purpose Transistor VOLTAGE 25 Volts CURRENT 200 mAmpere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SOT-23 CONSTRUCTION * PNP Silicon Transistor
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CHT4126GP
OT-23
CHT4126GP
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"MARKING CODE P5"
Abstract: 03389 BFG425W
Text: DISCRETE SEMICONDUCTORS BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1997 Oct 28 File under Discrete Semiconductors, SC14 1998 Mar 11 Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES
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BFG425W
SCA57
125104/00/04/pp12
"MARKING CODE P5"
03389
BFG425W
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str 5708
Abstract: BFG403W
Text: DISCRETE SEMICONDUCTORS BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11 Philips Semiconductors Product specification NPN 17 GHz wideband transistor BFG403W FEATURES
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BFG403W
SCA57
125104/00/04/pp12
str 5708
BFG403W
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"MARKING CODE P4"
Abstract: BFG410W RF NPN POWER TRANSISTOR 3 GHZ CA 5668
Text: DISCRETE SEMICONDUCTORS BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES
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BFG410W
SCA57
125104/00/04/pp12
"MARKING CODE P4"
BFG410W
RF NPN POWER TRANSISTOR 3 GHZ
CA 5668
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transistor marking t05
Abstract: T05 sot-23 transistor t05 h 033 cht05
Text: CHENMKO ENTERPRISE CO.,LTD CHT05PT SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 60 Volts CURRENT 0.5 Ampere APPLICATION * General purpose applications. SOT-23 * NPN General Purpose Transistor .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04)
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CHT05PT
OT-23
OT-23)
500mA)
transistor marking t05
T05 sot-23
transistor t05
h 033
cht05
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CHT05GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT05GP SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 60 Volts CURRENT 0.5 Ampere APPLICATION * General purpose applications. SOT-23 * NPN General Purpose Transistor .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04)
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CHT05GP
OT-23
OT-23)
500mA)
CHT05GP
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PDTA114TS
Abstract: PDTC114TS
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTA114TS PNP resistor-equipped transistor Product specification Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 1998 May 15 Philips Semiconductors Product specification PNP resistor-equipped transistor
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M3D186
PDTA114TS
MAM352
SCA55
115104/1200/02/pp8
PDTA114TS
PDTC114TS
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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BUK453-60A
Abstract: BUK453-60B T0220AB
Text: PHILIPS INTERNATIONAL bSE D B 711065b □□bL4D3fc. 033 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711065b
BUK453-60A/B
T0220AB
BUK453-60A
BUK453-60B
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ZO 107 MA
Abstract: 341S
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5009
2SC5009
ZO 107 MA
341S
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TRANSISTOR 2SC 2581
Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS
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2SC5009
2SC5009
TRANSISTOR 2SC 2581
2sc 1919
NEC NF 932
2sc 1915
TRANSISTOR 2SC 733
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NEC 1357
Abstract: LA 8873 TRANSISTOR C 4460
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the
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2SC5004
2SC5004
NEC 1357
LA 8873
TRANSISTOR C 4460
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D 1437 transistor
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the
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2SC5004
D 1437 transistor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS transistor array SYMBOL FEATURES • • • • • PHN70308 QUICK REFERENCE DATA 30 mQ isolation transistor 80 mQ spindle transistors TrenchMOS technology Logic level compatible
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PHN70308
PHN70308
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Untitled
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E bTE T> bb53T31 □02tUb4 033 BLV95 APX U.H.F. POWER TRANSISTOR N.P.N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters for the 900 MHz communication band. Features • multi base structure and emitter-ballasting resistors for an optimum temperature profile
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bb53T31
02tUb4
BLV95
OT-171)
tbS3T31
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BUV20
Abstract: No abstract text available
Text: MOTOROLA Order this document by BUV20/D SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications.
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BUV20/D
BUV20
BUV20
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