TSDF1205R
Abstract: TSDF1205RW TSDF1205W TSDF1205 Transistor TSDF1205R marking W0F
Text: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
TSDF1205R
TSDF1205W
D-74025
30-Jun-00
TSDF1205RW
TSDF1205
Transistor TSDF1205R
marking W0F
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Untitled
Abstract: No abstract text available
Text: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
TSDF1205
TSDF1205R
D-74025
30-Jun-00
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TSDF1205RW
Abstract: TSDF1205 TSDF1205R TSDF1205W
Text: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
TSDF1205R
TSDF1205W
D-74025
30-Jun-00
TSDF1205RW
TSDF1205
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PDF
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Untitled
Abstract: No abstract text available
Text: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
TSDF1205R
TSDF1205W
D-74025
30-Jun-00
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PDF
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Untitled
Abstract: No abstract text available
Text: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
TSDF1205
TSDF1205R
D-74025
20-Jan-99
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PDF
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Untitled
Abstract: No abstract text available
Text: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and
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Original
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
TSDF1205
TSDF1205R
D-74025
30-Jun-00
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PDF
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TSDF1205R
Abstract: TSDF1205
Text: TSDF1205/TSDF1205R Silicon NPN High Frequency Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain performance at UHF, VHF and microwave frequencies.
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TSDF1205/TSDF1205R
TSDF1205
TSDF1205R
D-74025
28-Oct-97
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Untitled
Abstract: No abstract text available
Text: Construction and Characteristics www.vishay.com Vishay OS-CON Solid Aluminum Capacitors with Organic Semiconductor Electrolyte VISHAY OS-CON SEMICONDUCTOR Inorganic Semiconductor Element: Si, Ge, Ga, etc. Transistor, Diode IC LED Organic Semiconductor (Element: C, H, N, etc.)
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05-Feb-14
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KTD1304
Abstract: No abstract text available
Text: KTD1304 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 3 1 2 SOT-23 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 12 V Collector Current-Continuous IC
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KTD1304
OT-23
05-Feb-09
100MHz
OT-23
KTD1304
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MARKING WY SOT-89
Abstract: WY sot-89 KTA1666 transistor marking WY PLANAR TRANSISTOR WY Marking WO
Text: KTA1666 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5
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KTA1666
OT-89
05-Feb-09
OT-89
500TYP
MARKING WY SOT-89
WY sot-89
KTA1666
transistor marking WY
PLANAR TRANSISTOR WY
Marking WO
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0A4B
Abstract: keypad 4x4 7 segment display 4x4 matrix keypad membrane 4x4 matrix keypad and microcontroller 4X4 HEX KEY PAD keypad membrane 4X4 LTC3710G hex keypad 4x4 hex keypad 7 segment display 4x4 keyboard
Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of
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AN529
PIC16C5X
PIC16C5X
DS00529E-page
0A4B
keypad 4x4 7 segment display
4x4 matrix keypad membrane
4x4 matrix keypad and microcontroller
4X4 HEX KEY PAD
keypad membrane 4X4
LTC3710G
hex keypad
4x4 hex keypad
7 segment display 4x4 keyboard
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4X4 HEX KEY PAD
Abstract: keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B
Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of
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AN529
PIC16C5X
PIC16C5X
4X4 HEX KEY PAD
keypad membrane 4X4
4x4 hex keypad with microcontroller
4x4 hex keypad
hex keypad
4-DIGIT 7-SEGMENT LED DISPLAY
AN529
LTC3710G
061c
065B
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Untitled
Abstract: No abstract text available
Text: KTA1666 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5
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KTA1666
OT-89
05-Feb-09
OT-89
500TYP
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Untitled
Abstract: No abstract text available
Text: STTH310-Y Automotive high voltage ultrafast rectifier Datasheet - production data Description A The STTH310-Y, which is using ST’s new 1000 V planar technology, is especially suited for switching mode base drive and transistor circuits. K A The device is also intended for use as a
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STTH310-Y
STTH310-Y,
STTH310UFY
DocID025643
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Untitled
Abstract: No abstract text available
Text: T fmtt TSDF1205/TSDF1205R Semiconductors Silicon NPN High Frequency Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain
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TSDF1205/TSDF1205R
TSDF1205
TSDF1205R
D-74025
28-Oct-97
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GC27980
Abstract: No abstract text available
Text: SGS-THOMSON ï ULKgraMOeS £j STP60N05 STP60N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP60N 05 STP60N 05FI V dss RDS on Id 50 V 50 V < 0.0 2 Q. < 0.0 2 Q. 60 A 32 A . Q . . TYPICAL RDs(on) = 0.017 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED
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TP60N
STP60N
STP60N05
STP60N05FI
GC27980
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ss2200
Abstract: No abstract text available
Text: SGS-THOMSON STP25N05 STP25N05FI ilLiOIFlfiMDtgi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STP25N 05 STP25N 05FI R D S o n Id 0 .0 6 5 SI 0 .0 6 5 a 25 A 16 A dss 50 V 50 V . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
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STP25N05
STP25N05FI
STP25N
O-220
ISOWATT221
STP25N05/FI
ss2200
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HI SPEED, HI CURRENT, TO-220, TRANSISTOR
Abstract: No abstract text available
Text: SGS-THOMSON IIL IIO T *! STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP30N 05 S TP30N 05FI V dss RDS on 50 V 50 V 0 .0 5 n 0 .0 5 Q Id ' 30 A 18 A . • . . . . AVALANCHE RU G G EDN ESS TECHNOLOG Y 100% AVALANCHE TESTED
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STP30N05
STP30N05FI
TP30N
ATT220
STP30N05/FI
HI SPEED, HI CURRENT, TO-220, TRANSISTOR
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STP40N
Abstract: No abstract text available
Text: £jï 40 05 40 05 SGS-THOMSON ULKgraMOeS STP N STP N FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP40N 05 STP40N 05FI V dss RDS on Id 50 V 50 V < 0 .0 3 5 Q. < 0 .0 3 5 Q. 40 A 23 A TYPICAL R D S (on) = 0.03 £2 . AVALANCHE RUGGED TECHNOLOGY
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TP40N
STP40N
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TP25N05
Abstract: TP25N
Text: £jï 25 05 25 05 SGS-THOMSON ULKgraMOeS STP N STP N FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S TP25N 05 STP25N 05FI . . . . . . . . dss 50 V 50 V RDS on Id < 0 .0 6 5 Q. < 0 .0 6 5 Q. 25 A 16 A TYPICAL R DS(on) = 0.048 Q. AVALANCHE RUGGED TECHNOLOGY
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TP25N
STP25N
TP25N05
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TSD200N05V
Abstract: schematic diagram UPS TSD200N05F smps&ups
Text: JIO E^ D • 7 ^ 2 3 7 J303QbQ0 ''T ^ S ■ TSD200N05F TSD200N05V SGS-THOMSON ItLIKglMKS s "15 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE G s-th o m so n ADVANCE DATA TYPE T S D 200N 05F /V V R dss 50 V d s o i I Id 0.006 n 200 A ■ VERY HIGH DENSITY POWER MOS
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m330bQG
TSD200N05F
TSD200N05V
TSD200N05F/V
T-91-20
O-240)
TSD200N05V
schematic diagram UPS
TSD200N05F
smps&ups
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IB 115
Abstract: 2n2907aub sot transistor pinout JANTXV2N2907A
Text: 0 .O P I E K Product Bulletin JANTX, JANTXV, 2N2907AUB September 1996 Surface Mount PNP General Purpose Transistor Type JANTX, JANTXV, 2N2907AUB .036 0.9 I .024 (0.61) f=ghi .023 (0.5B) .017 (0.43) .039 (0.99) '.035 (0.08) .078 (1.98) .071 (i.eo) COLLECTOR
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2N2907AUB
2N2907AUB
OT-23
MIL-PRF-19500/291
V2N2907AU
05fl0
IB 115
sot transistor pinout
JANTXV2N2907A
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K2662
Abstract: L122M 5Ft marking
Text: TO SHIBA 2SK2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs|= 4.0S(Typ.)
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2SK2662
K2662
L122M
5Ft marking
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un transistor 1205
Abstract: No abstract text available
Text: Y TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For low noise and sm all signal low pow er am plifiers, This tra n sisto r has superior noise figure and
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OCR Scan
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
1205R
20-Jan-99
un transistor 1205
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