Untitled
Abstract: No abstract text available
Text: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 1 — 10 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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2N7002BKV
OT666
AEC-Q101
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ZG20
Abstract: ZG20-3 C250 Transistor AC 141 35 15 rail en 50022 ZG20-2
Text: PI6-OC Interface relays 141 • Relays with transistor output up to 500 mA / 70 V DC • 35 mm DIN rail mounting, EN 50022; screw terminals 0,2…4 mm2 • Interconncertion strips type ZG20 available Transistor - output Max. switching voltage Min. switching voltage
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ZG20-1,
ZG20-2,
ZG20-3.
ZG20
ZG20-3
C250
Transistor AC 141
35 15 rail en 50022
ZG20-2
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C250
Abstract: transistor c 838 PI6-OC
Text: PI6-OC interface relays 213 • Relays PI6-OC - with transistor output, rated load up to 0,5 A / 70 V DC • 35 mm DIN rail mount, EN 50022, wires connection with screw terminals - 0,2.4 mm2 • Adapted for the co-operation with interconnection strip type ZG20
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ZG20-1
ZG20-2
ZG20-3
C250
transistor c 838
PI6-OC
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DP6-OC
Abstract: 5-32VDC C250 DG20
Text: DP6-OC industrial relays • Relays DP6-OC - with transistor output, rated load up to 0.5 A / 70 V DC • 35 mm DIN rail mount, EN 50022, wires connection with screw terminals - 0.2.4 mm2 • Adapted for the co-operation with interconnection strip type ZG20
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32VDC
DP6-OC-24VAC/DC
DP6-OC-230VAC/DC
DG20-1
DG20-2
DG20-3
DP6-OC
5-32VDC
C250
DG20
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clamp meter circuit diagram
Abstract: No abstract text available
Text: Bulletin No. ZFG/ZCG-B Drawing No. LP0737 Released 12/10 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net MODEL ZCG - SINGLE CHANNEL OUTPUT ROTARY PULSE GENERATOR MODEL ZFG and ZGG - SINGLE CHANNEL OUTPUT LENGTH SENSORS (Replaces MODELS RPGC, LSCS and LSCD respectively)
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LP0737
Ahmedabad-382480
clamp meter circuit diagram
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Rotary Sensor quadrature .5 inch shaft 500 pulses per revolution
Abstract: No abstract text available
Text: Bulletin No. ZCH/ZFH-A Drawing No. LP0738 Effective 10/09 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net MODEL ZCH - QUADRATURE OUTPUT ROTARY PULSE GENERATOR MODEL ZFH and ZGH - QUADRATURE OUTPUT LENGTH SENSORS (Replaces MODELS RPGQ, LSQS and LSQD respectively)
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LP0738
Ahmedabad-382480
Rotary Sensor quadrature .5 inch shaft 500 pulses per revolution
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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SSIP-12
KIA6283K
KIA7217AP
SSIP-10
KIA6240K
KIA6801K
KIA6901P/F
MB4213
F10P048
mn1280
mb4213 equivalent
smd transistor zaa
diode zener ZD 15
ic mb4213
transistor 2AX SMD
252 B34 SMD ZENER DIODE
bc237 equivalent SMD
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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USFB053
USFB13
USFB13A
USFB13L
USFB14
USFZ10V
USFZ11V
USFZ12V
USFZ13V
USFZ15V
KF6N60
2SK3850 equivalent
KF9N25
KF7N50
MDF10N65b transistor
PANASONIC ZENER
Kf10n60
KIA278R12PI equivalent
kid65003ap equivalent
kia578r05
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PDF
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Q62702-F1359
Abstract: 12L marking transistor 7g mmic+SMD+amplifier+marking+code+19s
Text: SIEMENS BFG 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: C E C C 50 002/259 ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OT-223
Q62702-F1359
900MHz
Q62702-F1359
12L marking
transistor 7g
mmic+SMD+amplifier+marking+code+19s
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PDF
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MARKING 19S
Abstract: sot marking code ZS
Text: SIEMENS BFQ 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: C E C C 50 002/259 ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1088
OT-89
MARKING 19S
sot marking code ZS
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Transistor BFR 135
Abstract: Transistor BFR Transistor BFR 35 transistor K 1412
Text: SIEMENS BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f f = 8GHz F = 1.3dB at 900MHz 1=B 11 m Q62702-F1510 o li RCs CO BFR 193W 10 ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
OT-323
Q62702-F1510
Transistor BFR 135
Transistor BFR
Transistor BFR 35
transistor K 1412
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Untitled
Abstract: No abstract text available
Text: BFG 19S SIEMENS NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers In antenna and telecommunications system s up to 1,5GHz at collector currents from 10 mA to 70 mA • C EC C -typ e available: C E C C 50 002/259 E S P : Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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BFG19S
Q62702-F1359
OT-223
Uni-0-01
fl235bD5
D1517SÃ
IS21I2
900MHz
aS35bD5
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by MJE18009/D SEMICONDUCTOR TECHNICAL DATA M JE 18009 M JF18009 D esigner’s Data Sheet SWITCHMODE™ NPN Silicon Planar Pow er Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific s ta te -o f-th e -a rt die designed for
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MJE18009/D
JF18009
MJE/MJF18009
221D-02
O-220
E69369
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nf950
Abstract: transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF
Text: 25C D • 523SbQS QQQMS3‘i 4 Wi SI ZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 2 36 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,
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OCR Scan
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023SbQS
Q62702-F553
nf950
transistor BF 37
transistor BF 236
TRANSISTOR 2SC 950
TRANSISTOR JC 539
2sc 1948 a
Q62702-F553
transistor code mark NF
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3055 transistor
Abstract: transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3
Text: 2SC T> m flS3SbOS D004T11 * mZI ZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful AF Output Stages 2 N 3055 -SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for
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D004T11
Q62702-U58
005ms
aa35b05
3055 transistor
transistor 3055
3055
2N3055
2SC 2276
M 3055 power transistor
n3055
2N3066
power transistor 3055
33S3
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PDF
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RETICON ccd
Abstract: No abstract text available
Text: Advance Information P Series J ^ E G zG RETICO N 256-, 512-, 1024-, 2048-Element Photodiode Linear Array General Description The P Series linear image sensors offer a high performance solution to the increasing demands of advanced imaging appli cations. This product family provides unparalleled performance
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2048-Element
2048-elements,
RL0256PAQ-011
RL0512PAQ-011
RL1024PAQ-011
RL2048PAQ-011
RETICON ccd
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PDF
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K77 transistor
Abstract: No abstract text available
Text: 7U0 ifr S e / U > 3 s h ^ - k p u - r SHINDENGEN SILICON DARLINGTON TRANSISTOR ARRAY SILICON DIODE ARRAY m m jcT-iiX 'i -y a- *< n m m .m .7 £ $ :zg L L x f c i j ,
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e13009
Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and
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MJE13005*
e13009
E13009 TRANSISTOR equivalent
4000w audio amplifier
JE-I3009
4000w inverter circuit
4000w power amplifier
equivalent of transistor mje13007
mje13009 equivalent
125VDC to 24 VDC regulator circuit
Motorola Bipolar Power Transistor Data
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO Pin : R F IN P U T V C C I : 1s t. DC S U P P L Y ®VBB : BA SE B IA S S U P P L Y @ V C C 2 : 2 n d . DC S U P P L Y ®PO : RF O U T P U T © G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25T unless otherwise noted)
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M57789
889-915MHz,
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PDF
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transistor 12w
Abstract: M57789
Text: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO PIN : P in ©VCCI <DV8B ©VCC 2 ©Po GND : : : : : : RF INPUT 1st. DO SUPPLY BASE BIAS SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 25^C unless otherwise noted
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M57789
889-915MHz,
transistor 12w
M57789
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PDF
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3268
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH50 Designer's Data Sheet POWER TRANSISTOR 4 AMPERES BOO VOLTS 50 WATTS SWITCHMODE NPN Silicon Planar Power Transistor The BUH50 has an application specific s ta te -o f-a rt die designed for use In 50 Watts HALOGEN electronic transformers and switchmode applications.
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BUH50
BUH50
21A-06
O-220AB
VCC-15Volt8
3268
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PDF
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