TRANSISTOR 100P Search Results

TRANSISTOR 100P Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 100P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
PSMN015-100B Abstract: PSMN015-100P Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN015-100B; PSMN015-100P SYMBOL QUICK REFERENCE DATA	Original	PSMN015-100B; PSMN015-100P PSMN015-100P 603502/300/03/pp12 PSMN015-100B	PDF
PSMN015-100P,127 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN015-100B; PSMN015-100P SYMBOL QUICK REFERENCE DATA	Original	PSMN015-100B; PSMN015-100P PSMN015-100P O220AB) PSMN015-100P,127	PDF
Untitled Abstract: No abstract text available Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 2 — 10 November 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1.	Original	BLF7G22L-100P; BLF7G22LS-100P BLF7G22L-100P	PDF
Untitled Abstract: No abstract text available Text: BLF8G27LS-100P Power LDMOS transistor Rev. 3 — 18 March 2013 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	BLF8G27LS-100P	PDF
Untitled Abstract: No abstract text available Text: BLF8G27LS-100P Power LDMOS transistor Rev. 1 — 3 December 2012 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	BLF8G27LS-100P	PDF
Untitled Abstract: No abstract text available Text: BLF8G27LS-100P Power LDMOS transistor Rev. 2 — 20 December 2012 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	BLF8G27LS-100P	PDF
BLF7G22LS-100P Abstract: No abstract text available Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 1 — 19 May 2011 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-100P; BLF7G22LS-100P BLF7G22L-100P BLF7G22LS-100P	PDF
flanged pin Abstract: No abstract text available Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 — 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-100P; BLF7G22LS-100P BLF7G22L-100P flanged pin	PDF
BJT IC Vce Abstract: NPN Transistor Pair HFA3134 npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with	Original	HFA3134 MM3134 HFA3134, BJT IC Vce NPN Transistor Pair npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E	PDF
Untitled Abstract: No abstract text available Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 — 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-100P; BLF7G22LS-100P BLF7G22L-100P	PDF
PSMN009-100B Abstract: PSMN009-100P Text: PSMN009-100P/100B N-channel enhancement mode field-effect transistor Rev. 01 — 29 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN009-100P in SOT78 TO-220AB	Original	PSMN009-100P/100B PSMN009-100P O-220AB) PSMN009-100B OT404 OT404,	PDF
HFA3134 Abstract: npn 8 transistor array Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model TM Application Note June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with	Original	HFA3134 MM3134 HFA3134, npn 8 transistor array	PDF
DRF1601 Abstract: smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER Text: UHF POWER TRANSISTOR DRF1601 NPN SiGe RF TRANSISTOR The DRF1601 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1601 can be used as a driver device or an output device, depending on the specific application.	Original	DRF1601 DRF1601 OT-223 900MHz 100nF 100pF smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER	PDF
smd transistor k 1540 Abstract: 703 TRANSISTOR smd transistor 835 transister transister smd DRF1401 NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js Text: UHF POWER TRANSISTOR DRF1401 NPN SiGe RF TRANSISTOR The DRF1401 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1401 can be used as a driver device or an output device, depending on the specific application.	Original	DRF1401 DRF1401 OT-223 900MHz 100nF 100pF smd transistor k 1540 703 TRANSISTOR smd transistor 835 transister transister smd NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js	PDF

Transistor lm 358 Abstract: lm 358 ic BC449 Text: CRO DESCRIPTION BC449 NPN SILICON TRANSISTOR 0 4 .6 8 T O -92 F 0 .1 8 [ BC449 is NPN silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. 4*6 3.58 (0.14) (0 . 18 ) r~	OCR Scan	BC449 BC449 300mA 625mW 100mA Transistor lm 358 lm 358 ic	PDF
BUK555-100A Abstract: transistor c 839 BUK555 transistor M 839 Text: Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.	OCR Scan	BUK555-100A/B BUK555 -100A -100B BUK555-100A/B BUK555-100A transistor c 839 BUK555 transistor M 839	PDF
Untitled Abstract: No abstract text available Text: Product Specification Philips Semiconductors PowerMOS transistor BUK553-100A/B Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.	OCR Scan	BUK553-100A/B BUK553 -100A -100B -T0220ABApril BUK553-1OOA/B	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor PHP3N20L Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high	OCR Scan	PHP3N20L T0220AB	PDF
BUK573 Abstract: BUK573-60A BUK573-60B Text: Product Specification Philips Semiconductors PowerMOS transistor BUK573-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack	OCR Scan	BUK573-60A/B -SOT186A BUK573-60A/B OT186A; BUK573 BUK573-60A BUK573-60B	PDF
BUK542 Abstract: BUK542-60A BUK542-60B Text: Product specification Philips Semiconductors PowerMOS transistor BUK542-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack	OCR Scan	BUK542-60A/B BUK542 -SOT186 OT186; BUK542-60A BUK542-60B	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor BUK562-60A Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for	OCR Scan	BUK562-60A SQT404 BUK562-60A tina14	PDF
FET TH 469 Abstract: No abstract text available Text: Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack	OCR Scan	BUK545-200A/B BUK545 -200A -200B FET TH 469	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack	OCR Scan	BUK543-100A/B BUK543 -100A -100B -SOT186	PDF
LD 757 ps Abstract: No abstract text available Text: Philips Semiconductors Product Specification PowerMOS transistor BUK545-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack	OCR Scan	BUK545-100A/B BUK545 -100A -100B BUK545-100A/B 1E-02 LD 757 ps	PDF

TRANSISTOR 100P Search Results

TRANSISTOR 100P Result Highlights (5)

TRANSISTOR 100P Datasheets Context Search

PSMN015-100B

PSMN015-100P,127

Untitled

Untitled

Untitled

Untitled

BLF7G22LS-100P

flanged pin

BJT IC Vce

Untitled

PSMN009-100B

HFA3134

DRF1601

smd transistor k 1540

Transistor lm 358

BUK555-100A

Untitled

Untitled

BUK573

BUK542

Untitled

FET TH 469

Untitled

LD 757 ps