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    TRANSISTOR 1308 Search Results

    TRANSISTOR 1308 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1308 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ds7830j

    Abstract: DS7830 J14A DUAL Differential Line DRIVER
    Text: DS7830 Dual Differential Line Driver General Description Features The DS7830 is a dual differential line driver that also performs the dual four-input NAND or dual four-input AND function. TTL Transistor-Transistor-Logic multiple emitter inputs allow this line driver to interface with standard TTL systems.


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    PDF DS7830 DS7830 ds7830j J14A DUAL Differential Line DRIVER

    DS7830J

    Abstract: C1996 DS7830 DS7830W DS8830 DS8830N J14A N14A DS8730 DS7830J-883
    Text: DS7830 DS8830 Dual Differential Line Driver General Description Features The DS7830 DS8830 is a dual differential line driver that also performs the dual four-input NAND or dual four-input AND function TTL Transistor-Transistor-Logic multiple emitter inputs allow this line driver to interface with standard TTL systems


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    PDF DS7830 DS8830 DS7830J C1996 DS7830W DS8830N J14A N14A DS8730 DS7830J-883

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    Untitled

    Abstract: No abstract text available
    Text: FJC1308 PNP Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1963 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 0 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


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    PDF FJC1308 FJC1963 OT-89 FJC1308

    Transistor 1308

    Abstract: FJC1308 FJC1963
    Text: FJC1308 PNP Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1963 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 0 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


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    PDF FJC1308 FJC1963 OT-89 FJC1308 Transistor 1308 FJC1963

    ladungspumpe

    Abstract: spannungsregelung drossel 13041 TRANSISTOR schaltregler Spannungsregler
    Text: Grundlagen Technische Informationen Topologien Topologien Spannungsregelung 13084 Ferroresonante Regelung Ii In der Ferroresonanztechnik erfolgt die Leitungsregelung mit einer resonanten Ladungspumpe, die zugleich für die galvanische Trennung zwischen Ein- und Ausgang verantwortlich ist.


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    MSK5810RH

    Abstract: MSK5800RH
    Text: M.S. KENNEDY CORPORATION 4707 DEY ROAD LIVERPOOL, NY 13088 PHONE: 315 701-6751 | FAX: (315) 701-6752 http://www.mskennedy.com/ MSK Web Site: Application Note 024 Understanding Startup Surge Current with MSK's RH1573 Based Rad Hard LDO Regulators By Paul Musil, MS Kennedy Corp.; Revised 9/19/2013


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    PDF RH1573 MSK5800RH, 5810RH, 5820RH, 5821RH, 5822RH, 5823RH, 5824RH, 5825RH, 5826RH, MSK5810RH MSK5800RH

    MSK5910RH

    Abstract: No abstract text available
    Text: M.S. KENNEDY CORPORATION 4707 DEY ROAD LIVERPOOL, NY 13088 PHONE: 315 701-6751 | FAX: (315) 701-6752 MSK Web Site: http://www.mskennedy.com/ Startup Voltage Tracking With MSK5910RH and 5922RH Low Dropout Radiation Hardened Regulators By Paul Musil, MS Kennedy Corp.; 10/2007


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    PDF MSK5910RH 5922RH MSK5922RH

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    IE-02

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor PHD3N20L Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface


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    PDF PHD3N20L IE-02

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    Untitled

    Abstract: No abstract text available
    Text: DS7830/DS8830 tß National Semiconductor DS7830/DS8830 Dual Differential Line Driver General Description Features The QS7830/DS8830 is a dual differential line driver that also performs the dual four-input NAND or dual four-input AND function. TTL Transistor-Transistor-Logic multiple emitter inputs al­


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    PDF DS7830/DS8830 TL/F/5799-7 TL/F/5799-1

    transistor jp

    Abstract: 2SD1308 2SB974 2T54 h13k
    Text: 2S D 1308 2SD1308 7*JUM'> l NPNx. / |j y h ^ > ' > X ? NPN Silicon Epitaxial Darlington Transistor Audio Frequency Power Amplifier and „ Low Speed Switching Industrial Use i * >v n V nmm 2SD1308li, y-f > i L T llf iS ? ; h . 7 > ^ 'X ^ -C 'O A -F A 1 S t i,


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    PDF 2SD1308 2SD1308Ã 2SB974 Tc-25 transistor jp 2SD1308 2SB974 2T54 h13k

    SPRAGUE 30D

    Abstract: No abstract text available
    Text: TypeTE VISHAY Vishay Sprague Aluminum Capacitors L ittl -lytic Electrolytics FEATURES • Proven dependable performance in industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of


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    PDF 505F100C TE1411 405F100C 106F100D 156F100D 206F100D 256F100D 306F100D TE1501 30D205F150B SPRAGUE 30D

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    d2396

    Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
    Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .


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    PDF 2SK2503 RK7002 TC363TS DTC314TS TC114G 100mA TA124G DTC144G d2396 TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    E 94733

    Abstract: AH-1 SOT23
    Text: SIEMENS BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92 PNP • CECC-type available: CECC 50002/249 ESP: Electrostatic discharge sensitive device observe handling precaution!


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    PDF BFT92 Q62702-F1050 OT-23 900MHz E 94733 AH-1 SOT23

    Untitled

    Abstract: No abstract text available
    Text: b b 5 3 ci31 002S3bb 003 H A P X Philips Semiconductors Product specification b?E D N AMER PH ILI PS/ DI SC R ETE £ NPN 5 GHz wideband transistor FEATURES • BFT25A PINNING Low current consumption 100 p A - 1 mA • Low noise figure • Gold metallization ensures


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    PDF bb53c 002S3bb BFT25A BFT25A

    Untitled

    Abstract: No abstract text available
    Text: 2SB1308 2SD1963 Transistors Power Transistor —50V> —3A 2SB1308 •Features •A b s o lu te maximum ratings (Ta=25'C ) 1 ) Low V ce(m i). (M ax. —0.45Vm ax. a t Ic/I b = - 1 . 5 A / —0.15A) 2 ) Excellent DC curre nt gain characteristics. 3 ) C om plem ents the 2S D 1963.


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    PDF 2SB1308 2SD1963 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP.

    mje 3003

    Abstract: mje 1303 transistor Bf 444 369-42 BFT25A 433-2 npn sot23 1303 DDE537A transistor SOT23 4d Philips FA 291
    Text: Philips Semiconductors b b 5 3 ci 3 1 N AMER DDE5 3 bb 003 ^lA PX P H ILIP S /D IS C R E TE Product specification b7 E NPN 5 GHz wideband transistor FEATURES • c BFT25A PINNING Low current consumption 100 nA - 1 mA • Low noise figure • Gold metallization ensures


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    PDF bb53ci31 DDE53bb BFT25A BFT25A mje 3003 mje 1303 transistor Bf 444 369-42 433-2 npn sot23 1303 DDE537A transistor SOT23 4d Philips FA 291

    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


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