ds7830j
Abstract: DS7830 J14A DUAL Differential Line DRIVER
Text: DS7830 Dual Differential Line Driver General Description Features The DS7830 is a dual differential line driver that also performs the dual four-input NAND or dual four-input AND function. TTL Transistor-Transistor-Logic multiple emitter inputs allow this line driver to interface with standard TTL systems.
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DS7830
DS7830
ds7830j
J14A
DUAL Differential Line DRIVER
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DS7830J
Abstract: C1996 DS7830 DS7830W DS8830 DS8830N J14A N14A DS8730 DS7830J-883
Text: DS7830 DS8830 Dual Differential Line Driver General Description Features The DS7830 DS8830 is a dual differential line driver that also performs the dual four-input NAND or dual four-input AND function TTL Transistor-Transistor-Logic multiple emitter inputs allow this line driver to interface with standard TTL systems
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DS7830
DS8830
DS7830J
C1996
DS7830W
DS8830N
J14A
N14A
DS8730
DS7830J-883
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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Untitled
Abstract: No abstract text available
Text: FJC1308 PNP Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1963 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 0 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
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FJC1308
FJC1963
OT-89
FJC1308
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Transistor 1308
Abstract: FJC1308 FJC1963
Text: FJC1308 PNP Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1963 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 0 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
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FJC1308
FJC1963
OT-89
FJC1308
Transistor 1308
FJC1963
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ladungspumpe
Abstract: spannungsregelung drossel 13041 TRANSISTOR schaltregler Spannungsregler
Text: Grundlagen Technische Informationen Topologien Topologien Spannungsregelung 13084 Ferroresonante Regelung Ii In der Ferroresonanztechnik erfolgt die Leitungsregelung mit einer resonanten Ladungspumpe, die zugleich für die galvanische Trennung zwischen Ein- und Ausgang verantwortlich ist.
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MSK5810RH
Abstract: MSK5800RH
Text: M.S. KENNEDY CORPORATION 4707 DEY ROAD LIVERPOOL, NY 13088 PHONE: 315 701-6751 | FAX: (315) 701-6752 http://www.mskennedy.com/ MSK Web Site: Application Note 024 Understanding Startup Surge Current with MSK's RH1573 Based Rad Hard LDO Regulators By Paul Musil, MS Kennedy Corp.; Revised 9/19/2013
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RH1573
MSK5800RH,
5810RH,
5820RH,
5821RH,
5822RH,
5823RH,
5824RH,
5825RH,
5826RH,
MSK5810RH
MSK5800RH
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MSK5910RH
Abstract: No abstract text available
Text: M.S. KENNEDY CORPORATION 4707 DEY ROAD LIVERPOOL, NY 13088 PHONE: 315 701-6751 | FAX: (315) 701-6752 MSK Web Site: http://www.mskennedy.com/ Startup Voltage Tracking With MSK5910RH and 5922RH Low Dropout Radiation Hardened Regulators By Paul Musil, MS Kennedy Corp.; 10/2007
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MSK5910RH
5922RH
MSK5922RH
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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IE-02
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor PHD3N20L Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface
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PHD3N20L
IE-02
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: DS7830/DS8830 tß National Semiconductor DS7830/DS8830 Dual Differential Line Driver General Description Features The QS7830/DS8830 is a dual differential line driver that also performs the dual four-input NAND or dual four-input AND function. TTL Transistor-Transistor-Logic multiple emitter inputs al
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DS7830/DS8830
TL/F/5799-7
TL/F/5799-1
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transistor jp
Abstract: 2SD1308 2SB974 2T54 h13k
Text: 2S D 1308 2SD1308 7*JUM'> l NPNx. / |j y h ^ > ' > X ? NPN Silicon Epitaxial Darlington Transistor Audio Frequency Power Amplifier and „ Low Speed Switching Industrial Use i * >v n V nmm 2SD1308li, y-f > i L T llf iS ? ; h . 7 > ^ 'X ^ -C 'O A -F A 1 S t i,
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2SD1308
2SD1308Ã
2SB974
Tc-25
transistor jp
2SD1308
2SB974
2T54
h13k
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SPRAGUE 30D
Abstract: No abstract text available
Text: TypeTE VISHAY Vishay Sprague Aluminum Capacitors L ittl -lytic Electrolytics FEATURES • Proven dependable performance in industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of
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505F100C
TE1411
405F100C
106F100D
156F100D
206F100D
256F100D
306F100D
TE1501
30D205F150B
SPRAGUE 30D
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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d2396
Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .
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2SK2503
RK7002
TC363TS
DTC314TS
TC114G
100mA
TA124G
DTC144G
d2396
TRANSISTOR PNP B1443
D2396 equivalent
B1569A
TRANSISTORS PNP 50 V 1 A B1443
B1186A
transistor c5147
b1344
transistor equivalent b1443
K2460
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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E 94733
Abstract: AH-1 SOT23
Text: SIEMENS BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92 PNP • CECC-type available: CECC 50002/249 ESP: Electrostatic discharge sensitive device observe handling precaution!
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BFT92
Q62702-F1050
OT-23
900MHz
E 94733
AH-1 SOT23
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Untitled
Abstract: No abstract text available
Text: b b 5 3 ci31 002S3bb 003 H A P X Philips Semiconductors Product specification b?E D N AMER PH ILI PS/ DI SC R ETE £ NPN 5 GHz wideband transistor FEATURES • BFT25A PINNING Low current consumption 100 p A - 1 mA • Low noise figure • Gold metallization ensures
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bb53c
002S3bb
BFT25A
BFT25A
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Untitled
Abstract: No abstract text available
Text: 2SB1308 2SD1963 Transistors Power Transistor —50V> —3A 2SB1308 •Features •A b s o lu te maximum ratings (Ta=25'C ) 1 ) Low V ce(m i). (M ax. —0.45Vm ax. a t Ic/I b = - 1 . 5 A / —0.15A) 2 ) Excellent DC curre nt gain characteristics. 3 ) C om plem ents the 2S D 1963.
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2SB1308
2SD1963
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
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mje 3003
Abstract: mje 1303 transistor Bf 444 369-42 BFT25A 433-2 npn sot23 1303 DDE537A transistor SOT23 4d Philips FA 291
Text: Philips Semiconductors b b 5 3 ci 3 1 N AMER DDE5 3 bb 003 ^lA PX P H ILIP S /D IS C R E TE Product specification b7 E NPN 5 GHz wideband transistor FEATURES • c BFT25A PINNING Low current consumption 100 nA - 1 mA • Low noise figure • Gold metallization ensures
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bb53ci31
DDE53bb
BFT25A
BFT25A
mje 3003
mje 1303
transistor Bf 444
369-42
433-2 npn
sot23 1303
DDE537A
transistor SOT23 4d
Philips FA 291
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BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products
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