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    TRANSISTOR 1345 Search Results

    TRANSISTOR 1345 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1345 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PBLS4005V

    Abstract: PBLS4005Y marking S5 sot363 marking K5 sot363
    Text: PBLS4005Y; PBLS4005V 40 V PNP BISS loadswitch Rev. 02 — 13 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:


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    PDF PBLS4005Y; PBLS4005V PBLS4005Y OT363 SC-88 OT666 PBLS4005V PBLS4005Y marking S5 sot363 marking K5 sot363

    PBLS4004Y

    Abstract: PBLS4004V sot363 marking K4
    Text: PBLS4004Y; PBLS4004V 40 V PNP BISS loadswitch Rev. 02 — 11 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:


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    PDF PBLS4004Y; PBLS4004V PBLS4004Y OT363 SC-88 OT666 PBLS4004Y PBLS4004V sot363 marking K4

    PBLS4003V

    Abstract: PBLS4003Y
    Text: PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch Rev. 02 — 14 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:


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    PDF PBLS4003Y; PBLS4003V PBLS4003Y OT363 SC-88 OT666 PBLS4003V PBLS4003Y

    PBLS4001V

    Abstract: PBLS4001Y 13454
    Text: PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch Rev. 01 — 8 November 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package


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    PDF PBLS4001Y; PBLS4001V PBLS4001Y OT363 SC-88 OT666 PBLS4001V PBLS4001Y 13454

    PBLS4003V

    Abstract: Philips date CODE MARKING PBLS4003Y
    Text: PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch Rev. 01.00 — 6 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number


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    PDF PBLS4003Y; PBLS4003V PBLS4003Y OT363 SC-88 OT666 PBLS4003V Philips date CODE MARKING PBLS4003Y

    PBLS4004Y

    Abstract: PBLS4004V sot363 marking K4
    Text: PBLS4004Y; PBLS4004V 40 V PNP BISS loadswitch Rev. 01 — 13 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package


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    PDF PBLS4004Y; PBLS4004V PBLS4004Y OT363 SC-88 OT666 PBLS4004Y PBLS4004V sot363 marking K4

    PBLS4001V

    Abstract: PBLS4001Y
    Text: PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch Rev. 02 — 25 April 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:


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    PDF PBLS4001Y; PBLS4001V PBLS4001Y OT363 SC-88 OT666 PBLS4001V PBLS4001Y

    PBLS4002Y

    Abstract: PBLS4002V
    Text: PBLS4002Y; PBLS4002V 40 V PNP BISS loadswitch Rev. 01 — 6 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package


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    PDF PBLS4002Y; PBLS4002V PBLS4002Y OT363 SC-88 OT666 PBLS4002Y PBLS4002V

    PBLS4002Y

    Abstract: PBLS4002V
    Text: PBLS4002Y; PBLS4002V 40 V PNP BISS loadswitch Rev. 02 — 19 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:


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    PDF PBLS4002Y; PBLS4002V PBLS4002Y OT363 SC-88 OT666 PBLS4002Y PBLS4002V

    PBLS4005V

    Abstract: PBLS4005Y
    Text: PBLS4005Y; PBLS4005V 40 V PNP BISS loadswitch Rev. 01 — 6 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package


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    PDF PBLS4005Y; PBLS4005V PBLS4005Y OT363 SC-88 OT666 PBLS4005V PBLS4005Y

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


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    PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    CA3246M

    Abstract: CA3246 CA3246M96 850e 610E CA3227 CA3227E CA3227M CA3227M96 SPICE 2G6
    Text: CA3227, CA3246 Data Sheet High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz September 1998 File Number 1345.4 Features • Gain-Bandwidth Product fT . . . . . . . . . . . . . . . . . >3GHz • Five Transistors on a Common Substrate


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    PDF CA3227, CA3246 CA3227 CA3246 CA3246M CA3246M96 850e 610E CA3227E CA3227M CA3227M96 SPICE 2G6

    Semiconductor 1346 transistor

    Abstract: No abstract text available
    Text: ON Semiconductort MPSW92 One Watt High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −300 Vdc Collector −Base Voltage VCBO −300 Vdc Emitter −Base Voltage


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    PDF MPSW92 O-226AE) Semiconductor 1346 transistor

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    Untitled

    Abstract: No abstract text available
    Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 5 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1855 is a switching device which can be driven directly by a 2.5 V power source.


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    PDF uPA1855 D13454EJ1V0DS00 PA1855

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbSB'lBl QQE'iBHB 17S • IAPX BLW50F b'JE D H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides


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    PDF BLW50F E13S1

    IR2422

    Abstract: DARLINGTON TRANSISTOR ARRAY J5001 BVCEO-45V T-52-13-45 45VForward
    Text: 1SE 0 | SHARP ELEK/ MELEC DIV 7-Unit 400mA Darlington Transistor Array 01007=10 0001=157 5 | T -5 2 -13-45 IR2422 7-Unit 400mA Darlington Transistor Array • Description Pin Connections The IR2422 is a 7-circuit driver. The internal clamping diodes enable the IC to drive the inductive


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    PDF 400mA 07Tfl T-52-13-45 IR2422 IR2422 400mA 16-pin 200mA DARLINGTON TRANSISTOR ARRAY J5001 BVCEO-45V 45VForward

    CA3246M

    Abstract: transistor k 911
    Text: CA3227, CA3246 Semiconductor September 1998 High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz File Number 1345.4 Features • Gain-Bandwidth Product f j . >3GHz • Five Transistors on a Common Substrate


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    PDF CA3227, CA3246 CA3227 CA3246 CA3246M transistor k 911

    2SB983

    Abstract: 2SD1345
    Text: TENTATIVE D AT A îfH Ü T t C A T .N o . TK 350 SHINDENGEN Silicon Complementary Transistor High Current Switching SILICON POWER TRANSISTOR I = rV 3 ^ / i 7 - K T ^ s / 7 > IJ □ > N P N / P N P x M O U T L IN E - f 7 u — r m FEATURES D IM E N S IO N S


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    PDF TK350 2SB983 2SD1345

    cm 45-12

    Abstract: Mrf621 transistor 1346 420 NPN Silicon RF Transistor VK200 vk200 rf choke
    Text: MRF621 SILICON T h e R F L in e 45 W - 470 M Hz "CONTROLLED Q" RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . .d es ig n e d fo r 1 2 .5 V o l t U H F large-signal a m p lifie r a p p lic a tio n s in industrial and c o m m e rc ia l


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    PDF MRF621 cm 45-12 Mrf621 transistor 1346 420 NPN Silicon RF Transistor VK200 vk200 rf choke

    1117 S 3,3 Transistor

    Abstract: Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345
    Text: CONTENTS PREFACE Related Document System List of Small Signal Transistors & Diodes Surface Mount Devices . 5 1. Using Device Selection Flowchart . 15 General Purpose Low Frequency Transistor SelectionMethod .


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    PDF TA75W 1117 S 3,3 Transistor Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345

    Untitled

    Abstract: No abstract text available
    Text: 2 CA3227, CA3246 High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features Description • Gain-Bandwidth Product fT) .>3GHz The CA3227 and CA3246 consist of five general purpose sil­


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    PDF CA3227, CA3246 CA3227 CA3246 100kH CA3227

    transistor 1345

    Abstract: CA3246E 4460E 1333E
    Text: S CA3227, CA3246 High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features • Description Gain-Bandwidth Product fT . >3G Hz The CA3227 and CA3246 consist of five general purpose sil­


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    PDF CA3227, CA3246 CA3227 CA3246 CA3227 transistor 1345 CA3246E 4460E 1333E