transistor 1850
Abstract: transistor s 623 1850 transistor
Text: 1719-35 35 Watt - 28 Volts, Class C Microwave 1725 - 1850 MHz Preliminary Issue GENERAL DESCRIPTION CASE OUTLINE The 1719-35 is a COMMON BASE transistor capable of providing 35 Watts of Class C, RF output power over the band 1725 -1850 MHz. This transistor is
|
Original
|
1850MHz,
transistor 1850
transistor s 623
1850 transistor
|
PDF
|
transistor 1850
Abstract: No abstract text available
Text: e PTB 20156 8 Watts, 1350–1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP
|
Original
|
1-877-GOLDMOS
1301-PTB
transistor 1850
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1719-2 2 Watts, 22 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION The 1719-2 is a COMMON BASE transistor capable of providing 2 Watts, Class C output power over the band 1750-1850 MHz. The transistor includes input prematching for full Broadband capabiliy. Gold metalizaton and
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1719-8 8 Watts, 28 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION The 1719-8 is a COMMON BASE transistor capable of providing 8 Watts, Class C output power over the band 1750-1850 MHz. The transistor includes input prematching for full Broadband capabiliy. Gold metalizaton and
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1719-2 2 Watts, 22 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION The 1719-2 is a COMMON BASE transistor capable of providing 2 Watts, Class C output power over the band 1750-1850 MHz. The transistor includes input prematching for full Broadband capabiliy. Gold metalizaton and
|
Original
|
|
PDF
|
1718-32L
Abstract: No abstract text available
Text: 1718-32L 32 Watt - 24 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1718-32L is a COMMON BASE transistor capable of providing 32 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier
|
Original
|
1718-32L
1718-32L
|
PDF
|
100 watt transistor
Abstract: No abstract text available
Text: 1819-35 35 Watt - 28 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1819-35 is a COMMON BASE transistor capable of providing 35 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
|
Original
|
1850MHz,
100 watt transistor
|
PDF
|
diode GP 829
Abstract: MDA215 MDA209 Diode GP 622 BY239 stub BD241C BLV2046 MDA208 philips ferrite 4b1
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV2046 UHF power transistor Product specification 1997 Aug 22 Philips Semiconductors Product specification UHF power transistor BLV2046 FEATURES PINNING - SOT460A • Emitter ballasting resistors for optimum temperature
|
Original
|
BLV2046
OT460A
SCA55
127067/00/01/pp12
diode GP 829
MDA215
MDA209
Diode GP 622
BY239
stub
BD241C
BLV2046
MDA208
philips ferrite 4b1
|
PDF
|
BDT91
Abstract: BY239 LLE15180X MBD738
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE15180X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
|
Original
|
LLE15180X
SCA53
127121/00/02/pp12
BDT91
BY239
LLE15180X
MBD738
|
PDF
|
philips ferrite 4b1
Abstract: 12NC philips BDT91 BY239 LLE18300X
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18300X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18300X FEATURES QUICK REFERENCE DATA
|
Original
|
M3D159
LLE18300X
SCA63
125002/00/03/pp12
philips ferrite 4b1
12NC philips
BDT91
BY239
LLE18300X
|
PDF
|
equivalent of SL 100 NPN Transistor
Abstract: TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X FEATURES QUICK REFERENCE DATA
|
Original
|
M3D159
LLE18040X
SCA63
125002/00/02/pp12
equivalent of SL 100 NPN Transistor
TRANSISTOR cq 817
TRansistor 648
SL 100 NPN Transistor
BDT239
05API
philips ferrite material specifications
BY239
LLE18040X
5344 TRANSISTOR
|
PDF
|
ferroxcube 4322
Abstract: PRC201 SMD CAPACITOR L27 BLV2048 smd L17 npn
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D374 BLV2048 UHF push-pull power transistor Preliminary specification 1999 Apr 23 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 PINNING - SOT494A FEATURES • Emitter ballasting resistors for optimum temperature
|
Original
|
M3D374
BLV2048
OT494A
SCA63
budgetnum/printrun/ed/pp15
ferroxcube 4322
PRC201
SMD CAPACITOR L27
BLV2048
smd L17 npn
|
PDF
|
transistor SMD DK
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV2042 UHF power transistor Product specification Supersedes data of 1996 Feb 09 1997 Jul 11 Philips Semiconductors Product specification UHF power transistor BLV2042 FEATURES PINNING - SOT409B • Emitter ballasting resistors for optimum
|
Original
|
BLV2042
OT409B
SCA55
127067/00/02/pp16
transistor SMD DK
|
PDF
|
TEKELEC 297
Abstract: BD239 BY239 LXE18400X IC 3263
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D039 LXE18400X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
|
Original
|
M3D039
LXE18400X
SCA63
125002/00/02/pp12
TEKELEC 297
BD239
BY239
LXE18400X
IC 3263
|
PDF
|
|
|
PHX18NQ20T
Abstract: No abstract text available
Text: PHX18NQ20T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification M3D308 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:
|
Original
|
PHX18NQ20T
M3D308
PHX18NQ20T
OT186A.
OT186A,
|
PDF
|
AcP 9805
Abstract: 8GP50 blv2047 M3D372
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D372 BLV2047 UHF power transistor Product specification Supersedes data of 1998 Mar 10 1999 Jan 28 Philips Semiconductors Product specification UHF power transistor BLV2047 PINNING - SOT468A FEATURES • Emitter ballasting resistors for optimum
|
Original
|
M3D372
BLV2047
BLV2047
OT468A
SCA61
125002/00/05/pp12
AcP 9805
8GP50
M3D372
|
PDF
|
BLV2047
Abstract: 4322-020-34420 M3D372 mbk200 ferroxcube 4322
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D372 BLV2047 UHF power transistor Product specification Supersedes data of 1999 Jan 28 1999 Jun 09 Philips Semiconductors Product specification UHF power transistor BLV2047 PINNING - SOT468A FEATURES • Emitter ballasting resistors for optimum
|
Original
|
M3D372
BLV2047
OT468A
125002/06/pp12
BLV2047
4322-020-34420
M3D372
mbk200
ferroxcube 4322
|
PDF
|
BLV2042
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLV2042 UHF power transistor Product specification Supersedes data of 1997 July 11 2000 May 08 Philips Semiconductors Product specification UHF power transistor BLV2042 FEATURES PINNING - SOT409A • Emitter ballasting resistors for optimum
|
Original
|
M3D175
BLV2042
OT409A
613524/03/pp16
BLV2042
|
PDF
|
transistor 2222
Abstract: "MARKING CODE S4" marking 82 sot343 BC548 bc548 PLASTIC
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X
|
Original
|
BFG11W/X
OT343
SCA49
127101/1200/02/pp12
transistor 2222
"MARKING CODE S4"
marking 82 sot343
BC548
bc548 PLASTIC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS720MC ZX3CD3S1M832 MPPS Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-40V; RSAT = 104m ; C = -3A
|
Original
|
ZXTPS720MC
ZX3CD3S1M832
|
PDF
|
RF POWER TRANSISTOR NPN
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20156 8 Watts, 1350-1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP
|
OCR Scan
|
|
PDF
|
pj 72 diode
Abstract: pj 67 diode W1872 diode pj 72
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP18N20E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and
|
OCR Scan
|
PHP18N20E
T0220AB
pj 72 diode
pj 67 diode
W1872
diode pj 72
|
PDF
|
ld18a
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance
|
OCR Scan
|
PHP18N20E
T0220AB
ld18a
|
PDF
|
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
|
OCR Scan
|
2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
|
PDF
|
