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    TRANSISTOR 1GM 6 Search Results

    TRANSISTOR 1GM 6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1GM 6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 MMBTA06 MMBTA56

    1gm transistor

    Abstract: 1GM sot-23 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 MMBTA06 MMBTA56 100mA 100mA, 100MHz 1gm transistor 1GM sot-23 transistor

    1GM sot-23 transistor

    Abstract: 1GM sot-23 MMBTA06 80V SOT-23 1gm transistor marKing 1GM sot-23 MMBTA06 MMBTA05 NPN medium power transistor in a SOT package transistor marking code SOT-23 free IC npn transistor
    Text: BL Galaxy Electrical Production specification NPN General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary PNP type available MMBTA05/MMBTA06 Pb Lead-free MMBTA55/MMBTA56 . z Also available in lead free version. APPLICATIONS


    Original     		PDF MMBTA05/MMBTA06 MMBTA55/MMBTA56) OT-23 MMBTA05 MMBTA06 1GM sot-23 transistor 1GM sot-23 MMBTA06 80V SOT-23 1gm transistor marKing 1GM sot-23 MMBTA06 MMBTA05 NPN medium power transistor in a SOT package transistor marking code SOT-23 free IC npn transistor

    1GM sot-23 transistor

    Abstract: 1gm transistor transistor 1gm
    Text: MMBTA05/MMBTA06 NPN General Purpose Transistor SOT-23 Features — Epitaxial planar die construction. — Complementary PNP type available MMBTA55/MMBTA56 . — Also available in lead free version. Applications — Ideal for medium power amplification and switching


    Original     		PDF MMBTA05/MMBTA06 OT-23 MMBTA55/MMBTA56) MMBTA05 MMBTA06 OT-23 1GM sot-23 transistor 1gm transistor transistor 1gm

    1GM sot-23 transistor

    Abstract: 1gm transistor 1GM sot-23 MMBTA06 MMBTA56 MPSA06
    Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA06 Small Signal Transistors NPN SOT-23 FEATURES .122 (3.1) .118 (3.0) .016 (0.4) Top View ♦ As complementary type, the PNP transistor MMBTA56 is recommended. .056 (1.43) .052 (1.33) 1 ♦ This transistor is also available in the TO-92 case with


    Original     		PDF MMBTA06 OT-23 MMBTA56 MPSA06. OT-23 1GM sot-23 transistor 1gm transistor 1GM sot-23 MMBTA06 MPSA06

    1gm transistor

    Abstract: 1GM sot-23 transistor marking code 1GM 1GM j MMBTA06 MMBTA56 MPSA06
    Text: MMBTA06 Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. SOT-23 3.Collector • As complementary type, the PNP tranistor MMBTA56 is


    Original     		PDF MMBTA06 OT-23 MMBTA56 OT-23 MPSA06. 100mA, 100mA 100MHz 01-Jun-2004 1gm transistor 1GM sot-23 transistor marking code 1GM 1GM j MMBTA06 MPSA06

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors MMBTA06LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.5 A ICM: Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF OT-23 MMBTA06LT1 OT-23 100mA 100MHz

    MMBTA06

    Abstract: No abstract text available
    Text: MMBTA06 0.5A , 80V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    SOT-23 High Voltage Application Telephone Application Complementary to MMBTA56 A


    Original     		PDF MMBTA06 OT-23 MMBTA56 100mA 100mA, 100MHz 03-May-2012 MMBTA06

    marking code 1GM

    Abstract: 1GM sot-23 transistor MPSA06 transistor
    Text: MMBTA06 Small Signal Transistors NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View ct u d ro P New .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) max. .004 (0.1)


    Original     		PDF MMBTA06 O-236AB OT-23) MMBTA56 100mA, 100mA 100MHz marking code 1GM 1GM sot-23 transistor MPSA06 transistor

    1GM sot-23 transistor

    Abstract: UCT 122
    Text: MMBTA06 Small Signal Transistors NPN uct New Features d o r P • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP tranistor MMBTA56 is recommended. • This transistor is also available in the TO-92 case


    Original     		PDF MMBTA06 OT-23 MMBTA56 MPSA06. OT-23 1GM sot-23 transistor UCT 122

    1GM sot-23 transistor

    Abstract: vishay TRANSISTOR Sot-23 MARKING CODE 20FEB02
    Text: MMBTA06 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95)


    Original     		PDF MMBTA06 O-236AB OT-23) MMBTA56 100mA, 100mA 100MHz 20-Feb-02 1GM sot-23 transistor vishay TRANSISTOR Sot-23 MARKING CODE 20FEB02

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type NPN General Purpose Transistor MMBTA05,MMBTA06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN silicon. 0.55 Driver transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF OT-23 MMBTA05 MMBTA06

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBTA06LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 0.5


    Original     		PDF OT-23 MMBTA06LT1 100MHz 037TPY 950TPY 550REF 022REF

    1gm marking

    Abstract: No abstract text available
    Text: MMBTA06 VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP tranistor MMBTA56 is recommended. • This transistor is also available in the TO-92 case


    Original     		PDF MMBTA06 MMBTA56 MPSA06. OT-23 MMBTA06 MMBTA06-GS18 MMBTA06-GS08 D-74025 01-Sep-04 1gm marking

    Marking 1GM

    Abstract: 1gm transistor 1GM sot-23 transistor MMBTA06 MMBTA56 transistor 1gm 6
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT-23 FEATURES z z Complementary PNP types available MMBTA56 1. BASE Ldeal for medium power amplification and switching 2. EMITTER 3. COLLECTOR


    Original     		PDF OT-23 MMBTA06 OT-23 MMBTA56 Marking 1GM 1gm transistor 1GM sot-23 transistor MMBTA06 MMBTA56 transistor 1gm 6

    Untitled

    Abstract: No abstract text available
    Text: MMBTA06 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.3 W(Tamb=25OC) * Collector current ICM : 0.5 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23


    Original     		PDF MMBTA06 OT-23 -55OC 150OC OT-23 MIL-STD-202E

    1GM sot-23

    Abstract: MMBTA06 1GM sot-23 transistor
    Text: MMBTA06 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.3 W(Tamb=25OC) * Collector current ICM : 0.5 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23


    Original     		PDF MMBTA06 OT-23 -55OC 150OC OT-23 MIL-STD-202E 1GM sot-23 MMBTA06 1GM sot-23 transistor

    SOT-23

    Abstract: No abstract text available
    Text: Formosa MS Drive NPN Transistor FMBTA05 / FMBTA06 List List. 1 Package outline. 2


    Original     		PDF FMBTA05 FMBTA06 1000hrs 15min 20sec 1000cycle 96hrs 1000hrs SOT-23

    2GM sot-23 transistor

    Abstract: marking code 1AM 2N3904 SOT-23 MARKING CODE bc857 to92 TRANSISTOR 1g sot23 npn pin configuration NPN transistor BC817 sot-23 TS560 1aM sot-23 transistor bc848 to 92 BC848 e BC818
    Text: BC807, BC808 Small Signal Transistors PNP FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) Top View ♦ Especially suited for automatic insertion .056 (1.43) .052 (1.33) 3 in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,


    Original     		PDF BC807, BC808 OT-23 BC817 BC818 OT-23 2GM sot-23 transistor marking code 1AM 2N3904 SOT-23 MARKING CODE bc857 to92 TRANSISTOR 1g sot23 npn pin configuration NPN transistor BC817 sot-23 TS560 1aM sot-23 transistor bc848 to 92 BC848 e BC818

    1GM sot-23 transistor

    Abstract: marking code 1GM sot23-6 marking code 601
    Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA06 Small Signal Transistors NPN SOT-23 FEATURES .122 (3.-H .118 (3.0) .016 (0.4) Top View ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor MMBTA56 is recommended.


    OCR Scan     		PDF MMBTA06 OT-23 MMBTA56 MPSA06. OT-23 1GM sot-23 transistor marking code 1GM sot23-6 marking code 601

    2sc2053

    Abstract: 2Sc2053 equivalent
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2053 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de­ signed for RF amplifiers on VHF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES


    OCR Scan     		PDF 2SC2053 2SC2053 175MHz 2Sc2053 equivalent

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC20S3 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de­ signed for RF amplifiers on VHF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES


    OCR Scan     		PDF 2SC20S3 2SC2053 175MHz 2SC2053

    1GM sot-23 transistor

    Abstract: No abstract text available
    Text: : S v m S : e m i 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors SOT — 23 MMBTA06LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W (Tamb=25 °C) 2. 1 Collector current 1cm * 1.3 0.5 A Collector base voltage


    OCR Scan     		PDF MMBTA06LT1 OT-23 950TPY 037TPY 550REF 022REF 1GM sot-23 transistor

    Untitled

    Abstract: No abstract text available
    Text: CCD Area Image Sensor MW3753MAE 8mm 1/2 inch 768H CCD Area Image Sensor •Overview ■Pin Assignments T h e M W 3 7 5 3 M A E is a 8m m (1 /2 inch) Interline Transfer C C D (IT -C C D ) solid state im age sensor device. This device uses photodiodes in the optoelectric conversion


    OCR Scan     		PDF MW3753MAE 795kH 795kHz 34Ssteps 795kHz I48steps i32052