C3691
Abstract: C3692 C36916 C369 transistor C36925 transistor C369 C369 BC369 marking code 43a bc369 equivalent
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC369 PNP medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Nov 20 2004 Nov 05 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC369 FEATURES
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M3D186
BC369
BC369-16
250tion
R75/05/pp12
C3691
C3692
C36916
C369 transistor
C36925
transistor C369
C369
BC369
marking code 43a
bc369 equivalent
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MAM287
Abstract: BC368 BC868 BCP68 BCP68-25 BCP69 SC-73 marking Code philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BCP68 NPN medium power transistor; 20 V, 1 A Product specification Supersedes data of 1999 Apr 08 2003 Nov 25 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BCP68
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M3D087
BCP68
SCA75
R75/04/pp12
MAM287
BC368
BC868
BCP68
BCP68-25
BCP69
SC-73
marking Code philips
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PDF
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BCP68
Abstract: BCP69 BCP69-16 BCP69-25 SC-73
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BCP69 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 2002 Nov 15 2003 Nov 25 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69
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M3D087
BCP69
SCA75
R75/05/pp14
BCP68
BCP69
BCP69-16
BCP69-25
SC-73
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS5320X 20 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 27 2004 Nov 04 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320X
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M3D109
PBSS5320X
SC-62)
R75/03/pp12
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BC868
Abstract: BC868-25
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BC868 NPN medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Dec 02 2004 Nov 08 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BC868 FEATURES
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M3D109
BC868
R75/07/pp9
BC868
BC868-25
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BC869-16 SOT89 PHILIPS
Abstract: 13861 SOT89 marking cec BC869 BC869-16 BC869-25 SOT89 transistor marking 84
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BC869 PNP medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Dec 02 2004 Nov 08 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC869 FEATURES
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M3D109
BC869
BC869-1tion
R75/06/pp11
BC869-16 SOT89 PHILIPS
13861
SOT89 marking cec
BC869
BC869-16
BC869-25
SOT89 transistor marking 84
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Dec 15 2004 Nov 03 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X
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M3D109
PBSS4320X
SC-62)
R75/03/pp12
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS5520X 20 V, 5 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Jun 23 2004 Nov 08 NXP Semiconductors Product data sheet 20 V, 5 A PNP low VCEsat (BISS) transistor PBSS5520X
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M3D109
PBSS5520X
R75/02/pp13
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transistor C368
Abstract: c368 transistor bc368 equivalent c368 high gain low capacitance NPN transistor marking code 43a BC368 BC369 SC-43A MLE327
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC368 NPN medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Dec 01 2004 Nov 05 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BC368 FEATURES
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M3D186
BC368
R75/05/pp9
transistor C368
c368 transistor
bc368 equivalent
c368
high gain low capacitance NPN transistor
marking code 43a
BC368
BC369
SC-43A
MLE327
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PDF
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S45 marking
Abstract: PBSS5320X SC6210 PBSS4320X
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5320X 20 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 27 2004 Nov 04 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320X
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M3D109
PBSS5320X
SC-62)
R75/03/pp12
S45 marking
PBSS5320X
SC6210
PBSS4320X
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PDF
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S44 MARKING
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Dec 15 2004 Nov 03 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X
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M3D109
PBSS4320X
SC-62)
R75/03/pp12
771-PBSS4320X135
S44 MARKING
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PDF
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PBSS4520X
Abstract: PBSS5520X sc6211
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5520X 20 V, 5 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Jun 23 2004 Nov 08 NXP Semiconductors Product data sheet 20 V, 5 A PNP low VCEsat (BISS) transistor PBSS5520X
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M3D109
PBSS5520X
R75/02/pp13
PBSS4520X
PBSS5520X
sc6211
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PDF
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PBSS4320X
Abstract: PBSS5320X sc6210
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Dec 15 2004 Nov 03 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X
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M3D109
PBSS4320X
SC-62)
R75/03/pp12
PBSS4320X
PBSS5320X
sc6210
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microwave amplifier 2.4 ghz 10 watts
Abstract: transistor 24 GHz
Text: 2324-20 20 Watts, 24 Volts, Class C Microwave 2300-2400 MHz GENERAL DESCRIPTION The 2324-20 is a COMMON BASE transistor capable of providing 20 Watts of Class C, RF output power over the band 2300-2400 MHz. This transistor is specifically designed for Microwave Broadband Class C amplifier
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160mA
microwave amplifier 2.4 ghz 10 watts
transistor 24 GHz
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BLS6G3135-20
Abstract: No abstract text available
Text: BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 03 — 3 March 2009 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance
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BLS6G3135-20;
BLS6G3135S-20
BLS6G3135-20
6G3135S-20
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10 watt power transistor
Abstract: No abstract text available
Text: 1720 - 20 20 Watt - 28 Volts, Class C Microwave 1700 - 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 1720-20 is a COMMON BASE transistor capable of providing 20 Watts of Class C, RF output power over the band 1700-2000 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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BLS6G3135-20
Abstract: No abstract text available
Text: BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 01 — 7 March 2007 Objective data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance
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BLS6G3135-20;
BLS6G3135S-20
BLS6G3135-20
6G3135S-20
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PDF
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97942
Abstract: 74929 Transistor 5503 231369 TRansistor A 940 10AM20 273157
Text: 10AM20 20 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM20 is a COMMON EMITTER transistor capable of providing 20 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes
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10AM20
10AM20
Temperatures13
97942
74929
Transistor 5503
231369
TRansistor A 940
273157
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BLS3135-20
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D259 BLS3135-20 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-20 FEATURES PINNING - SOT422A • Suitable for short and medium pulse applications
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M3D259
BLS3135-20
OT422A
603516/01/pp12
BLS3135-20
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PDF
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transistor 60 watt
Abstract: No abstract text available
Text: 1719 - 20 20 Watt - 28 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION CASE OUTLINE The 1719-20 is a COMMON BASE transistor capable of providing 20 Watts of Class C, RF output power over the band 1700-1900 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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nxp 1791
Abstract: radar 77 ghz NXP
Text: BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 4 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance
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BLS6G3135-20;
BLS6G3135S-20
BLS6G3135-20
6G3135S-20
nxp 1791
radar 77 ghz NXP
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PDF
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1920A20
Abstract: No abstract text available
Text: R.B.063099 1920A20 20 Watts, 25 Volts, Class A 10 dB Gain Personal 1930 – 1990 MHz GENERAL DESCRIPTION The 1920A20 is a COMMON EMITTER transistor capable of providing 20 watts of Class A, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS
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1920A20
1920A20
1990MHz
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transistor c 3206
Abstract: transistor j7
Text: Afa R adar Pulsed Power Transistor PH0404-7EL 7 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Emitter Configuration • Broadband Class C Operation • Reliable Fishbone Geometry
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OCR Scan
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PH0404-7EL
Sb4220S
5b42205
0DQ1175
transistor c 3206
transistor j7
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PDF
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transistor yb
Abstract: M220S transistor t 04 27
Text: Afa Radar Pulsed Power Transistor PH0404-1OOEL 100 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry
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OCR Scan
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PH0404-1OOEL
M220S
PH0404-lOOEL
5b422DS
transistor yb
transistor t 04 27
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PDF
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