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    TRANSISTOR 20A Search Results

    TRANSISTOR 20A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 20A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


    Original     		PDF O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027

    SE012

    Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 SE012 SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611

    Varistor RU

    Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 Varistor RU SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586

    2SC5586

    Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 2SC5586 transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F

    60V transistor npn 2a

    Abstract: No abstract text available
    Text: PZT158 NPN Transistor Elektronische Bauelemente Silicon Planar High Current Transistor RoHS Compliant Product SOT-223 Description The PZT158 is designed for general purpose switching and amplifier applications. Features * 6Amps Continous Current, Up To 20Amps Peak Current


    Original     		PDF PZT158 OT-223 PZT158 20Amps 10Amps 300mA 100mA, 50MHz 100mA 60V transistor npn 2a

    high power transistor

    Abstract: transistor 7333 Transistor 358 to3 2N3772 transistor 928 2N3772 APPLICATIONS transistor 358 to-3 358 transistor 2N3772A
    Text: 2N3772 High Power Transistor High power NPN silicon power transistor. General-Purpose linear amplifier, series pass regulators and inductive switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 4.0V (Maximum) at IC = 20A, IB = 4.0A.


    Original     		PDF 2N3772 high power transistor transistor 7333 Transistor 358 to3 2N3772 transistor 928 2N3772 APPLICATIONS transistor 358 to-3 358 transistor 2N3772A

    p364

    Abstract: tyco igbt V23990-P364-F-PM V23990-P364 ntcthermistor nf012 ntc-thermistor Diode DR 25
    Text: Target datasheet flow PACK 0, 600V, 20A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P364-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung


    Original     		PDF V23990-P364-F-PM D81359 p364 tyco igbt V23990-P364-F-PM V23990-P364 ntcthermistor nf012 ntc-thermistor Diode DR 25

    QCA30B60

    Abstract: QCA30A60 qca30a QCA30B40 QCB30A40 QCB30A60 c2e1
    Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


    Original     		PDF QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 94max 110TAB 32max 31max 35max QCA30B60 QCA30A60 qca30a QCA30B40 QCB30A40 QCB30A60 c2e1

    fgt313

    Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
    Text: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156


    Original     		PDF 2SA1186 2SC4024 2SA1215 2SC4131 2SA1216 2SC4138 100VAC 2SA1294 2SC4140 fgt313 transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a

    E2 diode

    Abstract: Diode B2x
    Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1


    Original     		PDF QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 110TAB 94max 32max 31max 35max 400/600V E2 diode Diode B2x

    NPN Transistor 1500V

    Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
    Text: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V


    Original     		PDF NTE238 NTE238 Cont00V, NPN Transistor 1500V transistor tl 187 187 npn transistor NPN Transistor 1500V 20a

    diode RU 3AM

    Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
    Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)


    Original     		PDF

    vvvf motor

    Abstract: 600v 100a servo motors QCA100AA100 QCA100AA120 dc motor control 100A 1000V 20A transistor E76102 transistor 2A
    Text: TRANSISTOR MODULE QCA100AA100 UL;E76102 M QCA100AA100 is a dual Darlington power transistor module which has seriesconnected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


    Original     		PDF QCA100AA100 E76102 QCA100AA100 QCA100AA120 vvvf motor 600v 100a servo motors QCA100AA120 dc motor control 100A 1000V 20A transistor transistor 2A

    QCA100A60

    Abstract: transistor 100A QBB100A40 QBB100A60 QCA100A40 IC-100A 6A620
    Text: TRANSISTOR MODULE QCA100A/QBB100A40/60 UL;E76102 M QCA100A and QBB100A is a dual Darlington power transistor modules with two high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. QCA100A Series-connected type


    Original     		PDF QCA100A/QBB100A40/60 E76102 QCA100A QBB100A 400/600V QCA100A40 QCA100A60 QBB100A40 QCA100A60 transistor 100A QBB100A60 IC-100A 6A620

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A B BUJ303A NPN power transistor Rev. 6 — 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits


    Original     		PDF BUJ303A O-220AB)

    curve tracer specifications

    Abstract: No abstract text available
    Text: TO -2 20A B BUJ303A NPN power transistor Rev. 6 — 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits


    Original     		PDF BUJ303A O-220AB) curve tracer specifications

    27a diode

    Abstract: DIODE 27A power Diode 20A transistor QF20AA40 QF20AA60 vvvf motor 600v 20a diode 4501A
    Text: TRANSISTOR MODULE THREE PHASES BRIDGE TYPE QF20AA40/60 QF20AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from


    Original     		PDF QF20AA40/60 QF20AA 400/600V QF20AA40 QF20AA60 QF20AA40 27a diode DIODE 27A power Diode 20A transistor QF20AA60 vvvf motor 600v 20a diode 4501A

    QF20AA60

    Abstract: DIODE BZ QF20AA40
    Text: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF20AA40/60 QF20AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from


    Original     		PDF QF20AA40/60 QF20AA IC20A, VCEX400/600V VCC300V 50ms50s s50ms QF20AA60 QF20AA60 DIODE BZ QF20AA40

    fast recovery diode 2a trr 200ns

    Abstract: vvvf motor QCA100BA60 600v 2A ultra fast recovery diode dc motor control 100A Darlington 300v
    Text: TRANSISTOR MODULE Hi- QCA100BA60 UL;E76102 M QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is


    Original     		PDF QCA100BA60 E76102 QCA100BA60 200ns) 130mA fast recovery diode 2a trr 200ns vvvf motor 600v 2A ultra fast recovery diode dc motor control 100A Darlington 300v

    qf30aa60

    Abstract: QF30AA40 IC 7403
    Text: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF30AA40/60 QF30AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from


    Original     		PDF QF30AA40/60 QF30AA VCEX400/600V TAB110 IC30A, VCC300V qf30aa60 QF30AA40 IC 7403

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    vqe 24 d

    Abstract: vqe 24 e VQE 23 E vqe 23 vqe 14 E VQE 21 d vqe 23 f vqe 23 c IGT6D20 IGT6E20
    Text: IGT6D20,E20 20 AMPERES 400,500 VOLTS EQUIV. Rd S ON = 0.12 0 Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


    OCR Scan     		PDF IGT6D20 vqe 24 d vqe 24 e VQE 23 E vqe 23 vqe 14 E VQE 21 d vqe 23 f vqe 23 c IGT6E20

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    IGT8D21

    Abstract: IGT8E21
    Text: csrifBAiMiiisro^ IGT8D21.E21 2CI AMPERES 400, 500 VOLTS EQUIV. FiDS ON = 0.145 i l Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


    OCR Scan     		PDF IGT8D21 60Msec, IGT8E21