Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2314 Search Results

    TRANSISTOR 2314 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2314 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor 03 smd

    Abstract: smd transistor NF transistor smd zc 11 smd transistor zc SMD TRANSISTOR TRANSISTOR SMD fr transistor SMD 24 smd transistor marking 03
    Text: SMD General Purpose Transistor NPN MMBT3904 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications  RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:


    Original     		PDF MMBT3904 OT-23 OT-23, MIL-STD-202G, Transistor 03 smd smd transistor NF transistor smd zc 11 smd transistor zc SMD TRANSISTOR TRANSISTOR SMD fr transistor SMD 24 smd transistor marking 03

    smd transistor 2314

    Abstract: tr/smd transistor 2314
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		PDF O220AB OT404 BUK9516-55A BUK9616-55A O220AB smd transistor 2314 tr/smd transistor 2314

    smd transistor 2314

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		PDF O220AB OT404 BUK9516-55A BUK9616-55A O220ABuotation smd transistor 2314

    74als power consumption

    Abstract: 74AS TTL SERIES 74AS 74AS Characteristics AN-476 Complete for 74LS family 74AS SERIES pnp transistor 1000v 74AS fan-out 74ls series logic family
    Text: Fairchild Semiconductor Application Note 476 March 1995 INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54/74), system designers have wanted more speed, less power consumption, or a combination of the two attributes. These requirements have spawned other logic families such as the DM54/


    Original     		PDF DM54/74) DM54/ DM54/74LS 74als power consumption 74AS TTL SERIES 74AS 74AS Characteristics AN-476 Complete for 74LS family 74AS SERIES pnp transistor 1000v 74AS fan-out 74ls series logic family

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


    Original     		PDF

    IRFD110

    Abstract: No abstract text available
    Text: IRFD110 Data Sheet Title FD 0 bt A, 0V, 00 m, July 1999 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD110 IRFD110

    Untitled

    Abstract: No abstract text available
    Text: RS6501 150KHz, 40V, 2A PWM Buck DC/DC Converter DESCRIPTION FEATURES The RS6501 is Monolithic IC that design for a step- down DC/DC Converter, and own the ability of driving a 2A load without additional transistor component. The output version included 3.3V, 5V, 12V and an


    Original     		PDF RS6501 150KHz, RS6501 150KHz cu013

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B BUK9516-55A N-channel TrenchMOS logic level FET Rev. 02 — 21 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9516-55A

    Untitled

    Abstract: No abstract text available
    Text: RS2596 150KHz, 3A PWM Buck DC/DC Converter The RS2596 is Monolithic IC that design for a step-down DC/DC Converter, and own the ability of driving a 3A load without additional transistor component. The output version included 3.3V, 5V, 12V and an adjustable type. It operates at a switching frequency of


    Original     		PDF RS2596 150KHz, RS2596 150KHz O-220-5

    BUK9516-55A

    Abstract: No abstract text available
    Text: TO -22 0A B BUK9516-55A N-channel TrenchMOS logic level FET Rev. 02 — 21 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9516-55A BUK9516-55A

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA RN2314-RN2318 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2314, RN2315, RN2316, RN2317, RN2318 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Sim plify Circuit Design


    OCR Scan     		PDF RN2314-RN2318 RN2314, RN2315, RN2316, RN2317, RN2318 RN2314 RN2315 RN2316 RN2317

    toshiba pnp rn

    Abstract: RN2314-RN2318
    Text: RN2314-RN2318 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2314, RN2315, RN2316, RN2317, RN2318 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm 2.1 + 0 1 .1.25+0.1 • W ith Built-in Bias Resistors


    OCR Scan     		PDF RN2314-RN2318 RN2314, RN2315, RN2316, RN2317, RN2318 RN1314 RN1318 RN2314 RN2315 toshiba pnp rn RN2314-RN2318

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor NPN Silicon MMBT2484LT1 colle3ctor M AXIMUM RATINGS Rating Symbol Value Collector- Emitter Voltage v CEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc v EBO 6.0 Vdc 'c 50 mAdc Symbol Max Unit Pd 225 mW


    OCR Scan     		PDF MMBT2484LT1 -236A b3b7255

    vk200 coil

    Abstract: jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON


    OCR Scan     		PDF MRF321 vk200 coil jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200

    forward converter uc3844

    Abstract: WIMA MKS 3 HIGH FREQUENCY Transformer ec35 Distribution transformer EC35 PC40PQ32 schematic uc3844 EC35 TRANSFORMER pme285mb AN1108 TDK RM6
    Text: . Order this document MOTOROLA by A N 11 0M SEMICONDUCTOR APPLICATION NOTE A N 1108 Design Considerations for a Two Transistor, C urrent Mode Forward C onverter By Kim Gauen Motorola Semiconductor Products Sector Discrete Systems Engineering This application note describes the design of a 150 W, 150


    OCR Scan     		PDF AN1108/D AN1108 26236T AN1108/D forward converter uc3844 WIMA MKS 3 HIGH FREQUENCY Transformer ec35 Distribution transformer EC35 PC40PQ32 schematic uc3844 EC35 TRANSFORMER pme285mb AN1108 TDK RM6

    ic T M 2313

    Abstract: No abstract text available
    Text: BUX21 File Number Silicon N-P-N Switching Transistor 1172 TERMINAL DESIGNATIONS For Switching Applications in Industrial and Commercial Equipment Features: Vcco — 2 00 V I c — 40 A P T— 250 W • ■ m 92CS-27S16 JEDEC TÛ-204AA POWER TRANSISTORS CM


    OCR Scan     		PDF BUX21 92CS-27S16 -204AA RCA-BUX21 O-204AA ic T M 2313

    transistor 2314

    Abstract: ic T M 2313
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor NPN Silicon COLLECTOR 3 2 EMITI MAXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage v CEO 60 Vdc C ollector-B ase Voltage VCBO 60 Vdc E m itter-B ase Voltage v EBO 6,0 Vdc 'c 50 mAdc


    OCR Scan     		PDF OT-23 O-236AB) 2484L transistor 2314 ic T M 2313

    Untitled

    Abstract: No abstract text available
    Text: BUX21 File Number HARRI S S E M I C O N D SE CT OR SbE i • 1 302271 0 0 4 0 7 3 3 413 1172 IH A S 7 = 5 5 - /9 Silicon N-P-N Switching Transistor t e r m in a l d e s ig n a t io n s For Switching Applications in Industrial and Commercial Equipment Features:


    OCR Scan     		PDF BUX21 92CS-27S16 O-204AA RCA-BUX21

    transistor c 2316

    Abstract: IC KA 2312 transistor t8w tm 2312 2SA1022 2SA1030 2SC2292 T10M40F1 T8M40F1 te 2304
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF Tc-25 Tr-25-Cl 250MHz Te-25 rr-25 transistor c 2316 IC KA 2312 transistor t8w tm 2312 2SA1022 2SA1030 2SC2292 T10M40F1 T8M40F1 te 2304

    Untitled

    Abstract: No abstract text available
    Text: w w w .fa irc h ild s e m i.c o m S E M I C O N D U C T O R tm RC4391 Inverti ng and Step-Down S w i t c h i n g Regul at or Features • Versatile — Inverting function + to - Step-down function Adjustable output voltage Regulates supply changes • Micropower —


    OCR Scan     		PDF RC4391 RC4391 DS30004391