CEP02N6
Abstract: CEF02N6 transistor cep02n6 CEB02N6 CEI02N6
Text: CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6 600V 5Ω 2A 10V CEB02N6 600V 5Ω 2A 10V CEI02N6 600V 5Ω 2A 10V CEF02N6 600V 5Ω 2A e 10V D Super high dense cell design for extremely low RDS(ON).
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CEP02N6/CEB02N6
CEI02N6/CEF02N6
CEP02N6
CEB02N6
CEI02N6
CEF02N6
O-220
O-263
O-262
O-220F
CEP02N6
CEF02N6
transistor cep02n6
CEB02N6
CEI02N6
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CEF02N6
Abstract: transistor cep02n6 CEP02N6 CEB02N6 CEI02N6
Text: CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6 600V 5Ω 2A 10V CEB02N6 600V 5Ω 2A 10V CEI02N6 600V 5Ω 2A 10V CEF02N6 600V 5Ω 2A e 10V D Super high dense cell design for extremely low RDS(ON).
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CEP02N6/CEB02N6
CEI02N6/CEF02N6
CEP02N6
CEB02N6
CEI02N6
CEF02N6
O-220
O-263
O-262
O-220F
CEF02N6
transistor cep02n6
CEP02N6
CEB02N6
CEI02N6
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2SD2015
Abstract: FM20
Text: 2SD2015 Silicon NPN Triple Diffused Planar Transistor IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE sat IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ MHz °C
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2SD2015
120min
2000min
40typ
10max
O220F)
2SD2015
FM20
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cef02n7g
Abstract: CEF02N7 cef*02N7
Text: CEP02N7G/CEB02N7G CEF02N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEP02N7G Type 700V 6.75Ω 2A 10V CEB02N7G 700V 6.75Ω 2A 10V CEF02N7G 700V 6.75Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON).
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CEP02N7G/CEB02N7G
CEF02N7G
CEP02N7G
CEB02N7G
O-263
O-220
O-220F
O-220/263
cef02n7g
CEF02N7
cef*02N7
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CEF02N6G
Abstract: CEB02N6G
Text: CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6G 600V 5.5Ω 2A 10V CEB02N6G 600V 5.5Ω 2A 10V CEF02N6G 600V 5.5Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON).
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CEP02N6G/CEB02N6G
CEF02N6G
CEP02N6G
CEB02N6G
O-263
O-220
O-220F
O-220/263
100ms
CEF02N6G
CEB02N6G
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CEF02N65D
Abstract: CEF02N65 cef*02n65d CEP02N65D CEP02N6 CEF02N6 CEB02N65D CEB02N6 692AD CEP02
Text: CEP02N65D/CEB02N65D CEF02N65D PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N65D 650V 6.9Ω 2A 10V CEB02N65D 650V 6.9Ω 2A 10V CEF02N65D 650V 6.9Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON).
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CEP02N65D/CEB02N65D
CEF02N65D
CEP02N65D
CEB02N65D
O-263
O-220
O-220F
O-220/263
CEF02N65D
CEF02N65
cef*02n65d
CEP02N65D
CEP02N6
CEF02N6
CEB02N65D
CEB02N6
692AD
CEP02
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2SD2015
Abstract: FM20 w605
Text: 2SD2015 Silicon NPN Triple Diffused Planar Transistor V BR CEO IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE(sat) IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ
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2SD2015
2000min
40typ
100ms
150x150x2
50x50x2
2SD2015
FM20
w605
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PDF
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Untitled
Abstract: No abstract text available
Text: MP6Z2 Transistors Medium Power Transistor 32V, 2A MP6Z2 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contains 2SD1766-die and 2SB1188-die in a package. (6) (5)
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2SD1766-die
2SB1188-die
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Untitled
Abstract: No abstract text available
Text: MP6Z2 Transistors Medium Power Transistor 32V, 2A MP6Z2 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = 0.5V(Typ.) (IC /IB = 2A / 0.2A) 2) Contains 2SD1766-die and 2SB1188-die in a package. (6) (5)
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2SD1766-die
2SB1188-die
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Untitled
Abstract: No abstract text available
Text: 2SB1697 Datasheet PNP -2A -12V Middle Power Transistor lOutline Parameter Value VCEO IC -12V -2A MPT3 Base Collector Emitter 2SB1697 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2661 3) Low VCE(sat) VCE(sat)= -0.18V(Max.)
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2SB1697
SC-62)
OT-89>
2SD2661
-50mA)
R1102A
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SD2661 Datasheet NPN 2A 12V Middle Power Transistor lOutline Parameter Value VCEO IC 12V 2A MPT3 Base Collector Emitter 2SD2661 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1697 3) Low VCE(sat) VCE(sat)=0.18V(Max.)
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2SD2661
SC-62)
OT-89>
2SB1697
A/50mA)
R1102A
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2SC4466
Abstract: 2SA1693
Text: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ
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2SC4466
2SA1693)
10max
80min
50min
20typ
110typ
to100)
to140)
2SC4466
2SA1693
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PDF
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2SC4466
Abstract: 2sa1693
Text: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ
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2SC4466
2SA1693)
10max
80min
50min
20typ
110typ
to100)
to140)
2SC4466
2sa1693
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PDF
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2SC4511
Abstract: 2SA1725 FM20
Text: 2SC4511 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1725 V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz
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2SC4511
2SA1725)
10max
80min
50min
20typ
110typ
to100)
to140)
2SC4511
2SA1725
FM20
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PDF
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2SC4511
Abstract: TRANSISTOR C-111 2SA1725 FM20 DSA0016510
Text: 2SC4511 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1725 V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz
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2SC4511
2SA1725)
10max
80min
50min
20typ
110typ
to100)
to140)
2SC4511
TRANSISTOR C-111
2SA1725
FM20
DSA0016510
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2SA1907
Abstract: 2SC5099
Text: 2SC5099 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1907 µA V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ
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2SC5099
2SA1907)
FM100
10max
80min
50min
20typ
2SA1907
2SC5099
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC5585 / 2SC5663 Transistors Low frequency transistor 50V, 2A 2SC5585 / 2SC5663 The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zExternal dimensions (Unit : mm) zApplications For switching
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2SC5585
2SC5663
500mA
2SC5585
250mV
200mA
SC-75A
OT-416
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MO-187
Abstract: e2 ic ZXT12P40DX ZXT12P40DXTA ZXT12P40DXTC DSA0037456
Text: ZXT12P40DX SuperSOT4 DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 75m ; IC= -2A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT12P40DX
MO-187
e2 ic
ZXT12P40DX
ZXT12P40DXTA
ZXT12P40DXTC
DSA0037456
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PDF
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ZXT12P40DX
Abstract: MO-187 TS16949 ZXT12P40DXTA ZXT12P40DXTC
Text: ZXT12P40DX SuperSOT4 DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 75m ; IC= -2A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT12P40DX
ZXT12P40DX
MO-187
TS16949
ZXT12P40DXTA
ZXT12P40DXTC
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PDF
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Untitled
Abstract: No abstract text available
Text: HT7465 2A Step-Down DC to DC Converter Feature General Description • Input voltage range: 4.75V to 24V The HT7465 is a 2A high eficiency step-down DCDC converter which includes a fully integrated MOS power transistor. The device uses a current-mode control operating methodology and can operate over a
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HT7465
HT7465
380kHz
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PDF
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Untitled
Abstract: No abstract text available
Text: HT7465 2A Step-Down DC to DC Converter Feature General Description • Input voltage range: 4.75V to 24V The HT7465 is a 2A high efficiency step-down DCDC converter which includes a fully integrated MOS power transistor. The device uses a current-mode control operating methodology and can operate over a
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HT7465
HT7465
380kHz
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NPN transistor 8050d
Abstract: BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor
Text: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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100mA
NPN transistor 8050d
BR 8050 D
transistor br 8050
8050c transistor
BR 8050
8050c
8050 TRANSISTOR PNP
st 8050d
BR 8050D
8050 pnp transistor
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PDF
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BR 8050 D
Abstract: NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d
Text: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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100mA
BR 8050 D
NPN transistor 8050d
BR 8050
transistor 8550
st 8050d
transistor br 8050
8050 TRANSISTOR PNP
8050c
8050 pnp transistor
8050d
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U2T405
Abstract: t605 U2T305
Text: U2T301 U2T305 POWER DARLINGTONS U2T401 U2T405 5 Amp, 150V, Planar NPN FEATURES DESCRIPTION • • • • • Unitrode NPN Darlingtons consist of a two transistor circuit on a single monolithic planar chip. High Current Gain: 1000 min. @ lc = 2A Low Saturation Voltage: as low as 1.5V max. @ lc = 2A
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U2T301
U2T305
U2T401
U2T405
U2T305
U2T301
U2T401
U2T405
t605
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PDF
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