2SB974
Abstract: 2SD1308 transistor 2A k transistor 2A pnp 2SD130
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -2A ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1308
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2SD1308
-100V,
2SB974
2SD1308
transistor 2A k
transistor 2A pnp
2SD130
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transistor 2A pnp
Abstract: 2SB880 2SD1190 transistor 2A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -2A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A
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2SD1190
transistor 2A pnp
2SB880
2SD1190
transistor 2A
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marking FZT705
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use FZT705 SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 ISSUE 2 - SEPTEMBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED hFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE FZT 604
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FZT705
OT223
FZT704
FZT704
100ms
marking FZT705
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2SB855
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB855 DESCRIPTION •Collector Current: IC= -2A ·Low Collector Saturation Voltage : VCE sat = -1.2V(Max)@IC= -2A ·High Collector Power Dissipation APPLICATIONS ·Designed for low frequency power amplifier applications.
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2SB855
2SB855
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A
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ZXTC4591AMC
ZXTD4591AM832
D-81541
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MARKING fzt
Abstract: MARKING fzt 605 fzt 605 FZT704 FZT705 DSA003714
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE FZT 605 PART MARKING DETAIL FZT705 C E B ABSOLUTE MAXIMUM RATINGS.
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OT223
FZT705
100ms
FZT704
MARKING fzt
MARKING fzt 605
fzt 605
FZT704
FZT705
DSA003714
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FZT705
Abstract: MARKING fzt FZT704 DSA003714
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 ISSUE 2 - SEPTEMBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED hFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE FZT 604 PART MARKING DETAIL FZT704 C E B ABSOLUTE MAXIMUM RATINGS.
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OT223
FZT704
100ms
FZT705
FZT705
MARKING fzt
FZT704
DSA003714
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2DB1188P
Abstract: P23Q
Text: 2DB1188P/Q/R 32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -32V Case: SOT89 IC = -2A high Continuous Current Low saturation voltage VCE sat < 800mV @ 2A Case material: Molded Plastic, "Green" Molding Compound.
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2DB1188P/Q/R
800mV
2DD1766
AEC-Q101
J-STD-020
MIL-STD-202,
DS31144
2DB1188P
P23Q
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Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE FZT 605 PART MARKING DETAIL FZT705 C E C B ABSOLUTE MAXIMUM RATINGS.
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OT223
FZT705
100ms
FZT704
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Untitled
Abstract: No abstract text available
Text: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)
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2SA2094
2SC5866
SC-96)
R1102A
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Untitled
Abstract: No abstract text available
Text: 2SC5866 Datasheet NPN 2A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 2A TSMT3 Collector Base Emitter 2SC5866 SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2094 3) Low VCE(sat) VCE(sat)=0.50V(Max.)
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2SC5866
SC-96)
2SA2094
R1102A
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ZETEX complementary transistor PRODUCT LINE
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A
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ZXTC4591AMC
ZXTD4591AM832
D-81541
ZETEX complementary transistor PRODUCT LINE
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transistor
Abstract: 2sb1240 2SD1189F SD1227 2SB822 2SB1277 2SB1182 transistor 2SB1240 silicon pnp transistor transistor 2A
Text: Transistors Medium power Transistor *32V,*2A 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.
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2SB1188
2SB1182
2SB1240
2SB822
2SB1277
2SB911M
2SD1766
2SD1758
2SD1862
2SD1189F
transistor
SD1227
transistor 2SB1240
silicon pnp transistor
transistor 2A
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter
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OT-23
MMBT3906LT1
MMBT3904LT1
-10mA
-50mA
100MHz
-10mA
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Untitled
Abstract: No abstract text available
Text: 2SD2661 Datasheet NPN 2A 12V Middle Power Transistor lOutline Parameter Value VCEO IC 12V 2A MPT3 Base Collector Emitter 2SD2661 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1697 3) Low VCE(sat) VCE(sat)=0.18V(Max.)
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2SD2661
SC-62)
OT-89>
2SB1697
A/50mA)
R1102A
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transistor 2A k
Abstract: 2SB1430 PNP 100V 2A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA)
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-100V
-100V;
transistor 2A k
2SB1430
PNP 100V 2A
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pnp npn dual emitter connected
Abstract: ZETEX complementary transistor PRODUCT LINE design ideas MARKING 91A NPN MARKING 91A NPN transistor Surface mount NPN/PNP complementary transistor MLP832 TS16949 ZXTD4591AM832 ZXTD4591AM832TA
Text: ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A Description Packaged in the 3mm x 2mm MLP Micro Leaded
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ZXTD4591AM832
D-81541
pnp npn dual emitter connected
ZETEX complementary transistor PRODUCT LINE
design ideas
MARKING 91A NPN
MARKING 91A NPN transistor
Surface mount NPN/PNP complementary transistor
MLP832
TS16949
ZXTD4591AM832
ZXTD4591AM832TA
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MLP832
Abstract: ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a
Text: ZXTD4591AM832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 40V; RSAT = 195m ; C = 2.5A VCEO = -40V; RSAT = 350m ; C = -2A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,
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ZXTD4591AM832
MLP832
ZXTD4591AM832
ZXTD4591AM832TA
ZXTD4591AM832TC
marking 91a
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on 4409
Abstract: EN4409 transistor on 4409 2SA1830 2SC4734
Text: Ordering number:EN4409 2SA1830 : PNPEpitaxial Planar Silicon Transistor 2SC4734 ; NPN Triple Diffused Planar Silicon Transistor 2SA1830/2SC4734 High-Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).
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EN4409
2SA1830
2SC4734
2SA1830/2SC4734
VCEO400V)
2SA1830/2SC4734
2SA1830/2SC4734]
on 4409
EN4409
transistor on 4409
2SA1830
2SC4734
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OP7100
Abstract: on 4409 ENN4409 transistor on 4409 2SA1830 2SC4734
Text: Ordering number:ENN4409 2SA1830 : PNP Epitaxial Planar Silicon Transistor 2SC4734 : NPN Triple Diffused Planar Silicon Transistor 2SA1830/2SC4734 High-Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).
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ENN4409
2SA1830
2SC4734
2SA1830/2SC4734
VCEO400V)
2SA1830/2SC4734
2084B
2SA1830/2SC4734]
OP7100
on 4409
ENN4409
transistor on 4409
2SA1830
2SC4734
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Marking Losa
Abstract: FZT705 marking FZT705
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 - FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE FZT605 PART MARKING DETAIL - fc
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OT223
FZT605
FZT705
SYM10V
FZT705
FZT704
Marking Losa
marking FZT705
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l05a
Abstract: 6k SOT223 marking FZT705
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARUNGTON TRANSISTOR ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * * FAST SWITCHING GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE - FZT605 PART MARKING DETAIL - FZT705 ABSOLUTE MAXIMUM RATINGS. PARAMETER
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OT223
FZT605
FZT705
-100mA
-10mA*
-100hA
-120V
FZT705
FZT704
55-c\
l05a
6k SOT223
marking FZT705
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transistor marking 2A H
Abstract: MARKING fzt transistor 3229 transistor C 3229
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 ISSUE 2 - SEPTEMBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE PART MARKING DETAIL - FZT604 FZT/04 ABSOLUTE MAXIMUM RATINGS.
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OT223
FZT604
FZT/04
FZT704
-100mA,
fi20M
FZT705
transistor marking 2A H
MARKING fzt
transistor 3229
transistor C 3229
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ZTX449
Abstract: No abstract text available
Text: PNP Silicon Planar Medium Power Transistor ZTX549 FEATURES • 1W power dissipation at Tsmb = 2 5 °C • 2A peak pulse current • Excellent gain characteristics up to 2A pulsed • Low saturation voltages • Fast switching • NPN complementary type available
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ZTX549
ZTX449
300/is.
ZTX449
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