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    TRANSISTOR 2N5038 Search Results

    TRANSISTOR 2N5038 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N5038 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N5038

    Abstract: No abstract text available
    Text: 2N5038 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching


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    2N5038 2N5038 PDF

    transistor 892

    Abstract: 2N5038 OC-90
    Text: 2N5038 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching


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    2N5038 2N5038 transistor 892 OC-90 PDF

    2N5038

    Abstract: No abstract text available
    Text: 2N5038 HIGH CURRENT NPN SILICON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching


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    2N5038 2N5038 PDF

    2N5038

    Abstract: No abstract text available
    Text: 2N5038  HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching


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    2N5038 2N5038 PDF

    2N5038

    Abstract: 2N5038J 2N5038JV 2N5038JX 100VOLTS JANTX 2N5038
    Text: 2N5038 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power-switching • High power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5038J • JANTX level (2N5038JX)


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    2N5038 MIL-PRF-19500 2N5038J) 2N5038JX) 2N5038JV) MIL-STD-750 MIL-PRF-19500/439 special12 2N5038 2N5038J 2N5038JV 2N5038JX 100VOLTS JANTX 2N5038 PDF

    automotive ignition tip162

    Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —


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    BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000 PDF

    MJE15020

    Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment


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    MJE340 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJE15020 DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698 PDF

    BUS48AP

    Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD166 BD165 BD166 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUS48AP 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10 PDF

    BU108

    Abstract: 2SC1629 equivalent BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:


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    BUX41 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC1629 equivalent BDX54 BU326 BU100 PDF

    BU108

    Abstract: BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage:


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    BU522B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773 PDF

    BU208A equivalent

    Abstract: BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ13333  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400–500 VOLTS 175 WATTS The MJ13333 transistor is designed for high voltage, high–speed, power switching


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    MJ13333 MJ13333 AMP32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU208A equivalent BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330 PDF

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


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    MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 PDF

    2SD418

    Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,


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    MJ10000 204AA TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SD418 TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023 PDF

    BU108

    Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD180 BD179 BD180 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631 PDF

    2N3055 equivalent transistor NUMBER

    Abstract: bd139 equivalent transistor MJE350 equivalent 2n6284 equivalent TIP152 equivalent MJE371 equivalent bd139 equivalent bd139 3v BUL45 equivalent BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1320  Data Sheet Designer's NPN Silicon Power Transistor Switchmode Series This transistor is designed for high–voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for


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    MJE1320 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N3055 equivalent transistor NUMBER bd139 equivalent transistor MJE350 equivalent 2n6284 equivalent TIP152 equivalent MJE371 equivalent bd139 equivalent bd139 3v BUL45 equivalent BU108 PDF

    bu806 REPLACEMENT

    Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.


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    220AB BU806 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C bu806 REPLACEMENT k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326 PDF

    2SA1046

    Abstract: transistor bc 851 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2N6107 equivalent BU326 BU108 BU100 BUL1 2N3055 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH51 Advance Information SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state–of–art die designed for use in 50 Watts Halogen electronic transformers.


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    BUH51 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SA1046 transistor bc 851 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2N6107 equivalent BU326 BU108 BU100 BUL1 2N3055 BDV64 PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    Untitled

    Abstract: No abstract text available
    Text: £Z7 SCS-THOMSON “ 7# g HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching


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    2N5038 SCG8S20 180nH PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON Mœ ËILËOTfô®KI 2N5038 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching


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    2N5038 2N5038 P003F PDF

    h13p

    Abstract: No abstract text available
    Text: SGS-THOMSON R fflD S lS ÎO ilL iS ir iR iO iD tg i 2 N 5 0 3 8 HIGH CURRENT NPN SILICON TRANSISTOR . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are


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    2N5038 h13p PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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