Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N5172 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Amplifier Transistor 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol
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2N5172
Abstract: No abstract text available
Text: 2N5172 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 General Purpose Amplifier Transistor G H Emitter Collector Base J A D Collector
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2N5172
29-Dec-2010
2N5172
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TRANSISTORS BJT bc548
Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002
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OT-623F
OT-323
OT-23
OT-89
OT-223
O-92S
O-226AE
O-92L
TRANSISTORS BJT bc548
jfet selection guide
J210 D2 PAK
PN4302
TN2102A
BJT BC546
FJN965
MPF102 JFET data sheet
KSP13
ks3302
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transistor 2n5172
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR AMPLIFIER TRANSISTOR 2N5172 TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION
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2N5172
C-120
2N5172Rev230701
transistor 2n5172
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2N5172
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5172 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM : 0.625 W (Tamb=25℃) 3. BASE Collector current A ICM : 0.5 Collector-base voltage
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2N5172
O--92
2N5172
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2n5172 transistor
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5172 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VALUE UNITS
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2N5172
C-120
2N5172Rev
081101E
2n5172 transistor
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2N5172
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5172 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VALUE UNITS Collector Emitter Voltage
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ISO/TS16949
2N5172
C-120
2N5172Rev
081101E
2N5172
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2N5172
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5172 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VALUE UNITS
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2N5172
C-120
2N5172Rev
081101E
2N5172
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5172 TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V BR CBO : 25 V Operating and storage junction temperature range
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270TYP
050TYP
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2N5172
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2N5172 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM : 0.625 W (Tamb=25℃) 3. BASE Collector current A ICM : 0.5 Collector-base voltage V(BR)CBO : 25 V
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O--92
2N5172
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2n5172
Abstract: No abstract text available
Text: 2N5172 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • High Current Gain 600 mW Power Dissipation E A TO-92 B Dim Min Max A 4.32 4.83 Mechanical Data • • • • • C Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208
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2N5172
MIL-STD-202,
DS21602
2n5172
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2N5172
Abstract: No abstract text available
Text: 2N5172 2N5172 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM : 0.625 W (Tamb=25℃) 3. BASE Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 25 V Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃
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2N5172
O--92
2N5172
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Untitled
Abstract: No abstract text available
Text: 2N5172 NPN SMALL SIGNAL TRANSISTOR Features • · High Current Gain 600 mW Power Dissipation E A TO-92 B Mechanical Data · · · · · Min Max A 4.32 4.83 C Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Marking: Type Number
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2N5172
MIL-STD-202,
DS21602
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transistor 2N5952
Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
Text: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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2N5172
Abstract: DS21602
Text: 2N5172 NPN SMALL SIGNAL TRANSISTOR Features High Current Gain 600 mW Power Dissipation KM M-H TO-92 Dim Min Max A 4.32 4.83 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Marking: Type Number
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2N5172
MIL-STD-202,
DS21602
2N5172
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marking EB 202 transistor
Abstract: No abstract text available
Text: 2N5172 VISHAY NPN SMALL SIGNAL TRANSISTOR /uTE M ir I POWER SEMICONDUCTOR J Features High Current Gain 600 mW Power Dissipation TO-92 Dim Min Max A 4.32 4.83 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram
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2N5172
MIL-STD-202,
10pxA
DS21602
marking EB 202 transistor
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Untitled
Abstract: No abstract text available
Text: SynSEMi T O -92 Plastic Encapsulate Transistors 5YN5EMI SEMICONDUCTOR 2N5172 TRANSISTOR NPN TO — 92 FEATURES Power dissipation 1. EMITTER Po, : 0.625 Collector current W Icm A • 0.5 oo^ (Tamb=25 *C) 2. COLLECTOR 3. BASE Collector base voltage V (br x b o : 25 V
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2N5172
270TYP
050TYP
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2N5172
Abstract: DS21
Text: 2N5172 visH A Y NPN SMALL SIGNAL TRANSISTOR /l i t e w i i / POWERSEMICONDUCTOR I Features • • High Current Gain 600 mW Power Dissipation TO-92 Dim Min Max A 4.32 4.83 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208
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2N5172
MIL-STD-202,
2N5172
DS21
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MMST5088
Abstract: T7208 2n2925 mpsa18 "Die No." t1130 transistor SST 250
Text: DIE No. NPN Small Signal TRANSISTOR DIE No. •MAXIMUM RATINGS TA=25°C Free Air Symbol Value Unit VcEO 40 V Collector-Base Voltage VcBO 70 V Emitter-Base Voltage V ebo 6 V Collector Current Continuous Ic Parameter C -2 2 Collector-Emitter Voltage ■ DESCRIPTION
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2N3860
2N5232A
MPSA20
360mW
375mW
MMST5088
T7208
2n2925
mpsa18
"Die No."
t1130
transistor SST 250
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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transistor 2N929
Abstract: 2C5088 MPS-A10 SILICON SMALL-SIGNAL DICE MPSA20 MPSA10 2n929 2N5172 SILICON DICE motorola MPS5133
Text: NOTOROLA SC {DIODES/OPTO* 6367255 MOTOROLA SC 34 D I O D E S /OPTO ' ÏF|bBb7ESS 0 0 3 7 ^ 34C 37999 . SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 7 " D ~7 2C5088 DIE NO. — NPN LINE SOURCE: DMB100 This die provides performance similar to that of the following device types:
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DMB100
2N929
2N930
2N5172
MMCM930
MMT930
MPS929
MPS930
MPS5133
MPS5172
transistor 2N929
2C5088
MPS-A10
SILICON SMALL-SIGNAL DICE
MPSA20
MPSA10
SILICON DICE motorola
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