TRANSISTOR 2N5179 Search Results

TRANSISTOR 2N5179 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 2N5179 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2N5179 w w w. c e n t r a l s e m i . c o m SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5179 type is a silicon NPN RF transistor, manufactured by the epitaxial planar process, designed for VHF/UHF amplifier, oscillator, and converter applications.	Original	2N5179 2N5179 100MHz 500MHz 200MHz 200MHz,	PDF
ny transistor Abstract: 2N5770 2N2857 2n918 die 2N918 2N5179 2N2857 DIE PN3564 PN3563 BFY90 Text: PROCESS CP317 Central Small Signal Transistor TM Semiconductor Corp. NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS	Original	CP317 CMPT918 2N918 2N2857 2N5179 2N5770 BFY90 PN3563 PN3564 ny transistor 2N5770 2N2857 2n918 die 2N918 2N5179 2N2857 DIE PN3564 PN3563 BFY90	PDF
PN3563 equivalent Abstract: 2N5770 2n918 transistor 2n918 die 2N2857 2N5179 2N918 BFY90 CMPT918 CP317 Text: PROCESS CP317 Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS Top Side Metalization Al - 30,000Å	Original	CP317 CMPT918 2N918 2N2857 2N5179 2N5770 BFY90 PN3563 PN3564 22-March PN3563 equivalent 2N5770 2n918 transistor 2n918 die 2N2857 2N5179 2N918 BFY90 CMPT918 CP317	PDF
MG1007-42 Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30 Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are	Original	MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30	PDF
transistor 2N5179 Abstract: 2N5179 Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N5179 TO-72 Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE VCBO 20 Collector -Base Voltage VCEO 12 Collector -Emitter Voltage	Original	ISO/TS16949 2N5179 C-120 transistor 2N5179 2N5179	PDF
2N5179 Abstract: schematic diagram dc converter 72 v to 12 v 714PS Text: 2N5179 VHF/UHF AMPLIFIER DESCRIPTION The 2N5179 is a silicon planar epitaxial NPN transistor in Jedec TO-72 metal case, intended for lownoise tuned-amplifier and converter applications up to 500 MHz. TO-72 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS	Original	2N5179 2N5179 schematic diagram dc converter 72 v to 12 v 714PS	PDF
2N5179 Abstract: No abstract text available Text: , Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5179 TO-72 NPN SILICON PLANAR TRANSISTOR Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE VCBO Collector -Base Voltage	Original	2N5179 12DEG 48DEG 325gm/1Kpcs 32kgs 2N5179	PDF
Untitled Abstract: No abstract text available Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N5179 TO-72 Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION	Original	2N5179 C-120	PDF
2N5179 Abstract: D 431 Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N5179 TO-72 Boca Semiconductor Corp BSC Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS	Original	2N5179 C-120 2N5179 D 431	PDF
npn UHF transistor 2N5179 Abstract: No abstract text available Text: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters	Original	2N5179 npn UHF transistor 2N5179	PDF
2N5179 Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10	Original	2N5179 2N5179 npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10	Original	2N5179 2N5179	PDF
2N5179 Abstract: ic 741 datasheet pdf of 741 ic IC 741 MSC1305 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc	Original	2N5179 MSC1305 2N5179 ic 741 datasheet pdf of 741 ic IC 741 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179	PDF
2N5179 Abstract: transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc	Original	2N5179 2N5179 transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179	PDF

y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
TRANSISTOR 2N2950 Abstract: 2N2950 2N5342 2N3137 transistor 2n4959 2N4427 2N5032 Transistor 2N3866 transistor 2n5109 2N3600 Text: GENERAL TRANSISTOR CORP 54E D • 3=126001 0 0 0 0 0 7 b M ■ General Transistor Corporation f “ 3 1" O I 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 Telex 65-3474 • FAX (213) 672-2905 SMALL SIGNAL TRANSISTORS NPN TRANSISTORS FOR RF APPLICATIONS	OCR Scan	312fl001 2N91S 2N2857 2N3600 2N3839 2N5031 2N5032 2N53420 2N5342 2N6304 TRANSISTOR 2N2950 2N2950 2N3137 transistor 2n4959 2N4427 Transistor 2N3866 transistor 2n5109	PDF
RCA-2N5179 Abstract: 2n5179 equivalent TA7319 2N5179 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor Text: File No. 288 RF Power Tran sisto rs Solid State Division 2N5179 RCA-2N5179* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely useful in low-noise tuned-amplifier and converter applications at UHF frequencies, and as	OCR Scan	2N5179 RCA-2N5179* 2N5179 TA7319. 482mm) RCA-2N5179 2n5179 equivalent TA7319 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor	PDF
2n5179 Abstract: t-31-21 MMBT5179 Text: 2N5179/PN5179/MMBT5179 p - NATL SEMICOND DISCRETE - H E D \| bS011i30 National _ Semiconductor PN5179 2N5179 Q[]372Mfl fl \| T-3/-2I MMBT5179 TL/G/10100-5 NPN RF Transistor Electrical Characteristics T a = 25°C unless otherwise noted Min P aram eter Sym b o l	OCR Scan	2N5179 TL/Q/10100-12 D037EMÃ MMBT5179 TL/G/10100-5 TL/Q/10100-1 bsail30 T-31-21 2n5179 t-31-21 MMBT5179	PDF
2N5179 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e RF Line 4.5 dB @ 200 MHz HIGH FREQUENCY TRANSISTOR NPN SILICO N NPN SILICO N RF HIGH FREQ UENCY TRANSISTOR . . . designed p r im a r ily fo r use in high -g a in , lo w -n o is e a m p lifie r , o s c il la to r, and m ix e r a p p lic a tio n s .	OCR Scan	2N5179 35flo 2N5179	PDF
Untitled Abstract: No abstract text available Text: General Transistor Corporation SMALL SIG N A L TRANSISTORS • ■ ■ NPN TRANSISTORS FOR RF APPLICATIONS VCEO V M/OtNUH RATINI3S le (mA) Ptol (mW) 2N91B 2N2857 2N3600 2N3839 15 15 15 15 50 40 50 40 200 200 200 200 2N5031 2N5032 2N5179 2N5842 10 10 12 10	OCR Scan	2N91B 2N2857 2N3600 2N3839 2N5031 2N5032 2N5179 2N5842 2N6304 2N6305	PDF
2N5179 Abstract: No abstract text available Text: 2N5179/PN5179/MMBT5179 National I Semiconductor 2 PN5179 2N5179 MMBT5179 C /^ O T frJJ ^ 7 VK /M / jf /M U E- U D r. C TO- 7 2 ,y u TL/G/10100-12 \ A b u iv itr T 0 ’ 256 TO -9 2 (SOT -2 3 TL/G/10100-5 TL/G/10100-1 NPN RF Transistor Electrical Characteristics	OCR Scan	2N5179/PN5179/MMBT5179 2N5179 PN5179 MMBT5179 TL/G/10100-12 TL/G/10100-5 TL/G/10100-1 2N5179	PDF

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TRANSISTOR 2N5179 Search Results

TRANSISTOR 2N5179 Result Highlights (5)

TRANSISTOR 2N5179 Datasheets Context Search

Untitled

ny transistor

PN3563 equivalent

MG1007-42

transistor 2N5179

2N5179

2N5179

Untitled

2N5179

npn UHF transistor 2N5179

2N5179

Untitled

2N5179

2N5179

y51 h 120c

LG color tv Circuit Diagram schematics

IC HXJ 2038

1N6227

TRANSISTOR 2N2950

RCA-2N5179

2n5179

2N5179

Untitled

2N5179