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    TRANSISTOR 2SA 6 J Search Results

    TRANSISTOR 2SA 6 J Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SA 6 J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2SA

    Abstract: 2SA940 AC550 2sa 940 2SC2073
    Text: S / U D > P N P = * # « * - t t f é h ^ : / 5; 3 ^ SILICON PNP TRIPLE DIFFUSED M ESA TRANSISTOR o nummm O MflilpJttiaffl 940 2SA Unit in m m 0Z.6±O.2 o Power Amplifier o Vertical Output 2302073 Applications Applications t ^ i' '/ >J Complementary to 2SC2073


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    PDF 2SC2073 220AB AC550 -120v, -500mA, IHJ11 -500ma 2sa940 transistor 2SA 2SA940 AC550 2sa 940 2SC2073

    2SA1804

    Abstract: 2SC4689 111s1
    Text: 2SA1804 TO SH IBA 2SA 1804 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.8±0.5 i Complementary to 2SC4689 Recommend for 55W High Fidelity Audio Frequency Amplifier output Stage. 0 3 .6 Í0 .2 3.5 MAXIMUM RATINGS Ta = 25°C


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    PDF 2SA1804 2SC4689 2SA1804 2SC4689 111s1

    2SK1973

    Abstract: d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2S01781K 2sc4912 2SA103G 2SK2307
    Text: Transistor Quick reference I Laadad p P a g e lli Package-Application Vceo V * * y,CES * * *w CER Vn«w Application EM3 UMT 2SC4081LN 40 Low Noise I 50 25 60 Package | Part No. f 2SA1037AKLN(E) SMT / 2SA1774 \2 S C 4 6 1 7 120 2SC4723 /2SA 1576A V2SC3722K


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    PDF /2SA103GK 2411K 2SB1197K 2SD1781K 2SB1051K 2SD1484K 2SA1774 2SC4723 2SC4081 2SA1037AKLN 2SK1973 d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2S01781K 2sc4912 2SA103G 2SK2307

    2sa1834

    Abstract: 2SC5001R
    Text: | ' 7 > y ^ í f / T ransistors 2SA 1834 2SA1834 y U = l > h 7 > v * * Epitaxial Planar PNP Silicon Transistor fifcJlíJfcíi'liffl/Low Freq. Power Amp. 1W f ^ ü lä /D im e n s io n s Unit : mm 2.3 ' f 6.51 0,2 1) V c E ( s a t ) ^ 6 ^ o ^ ♦o ? , CO.5


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    PDF 2SA1834 2SC5001 2SC5001. 2sa1834 2SC5001R

    2SA990

    Abstract: PA33
    Text: NEC D E S C R IP TIO N PNP SILICON TRANSISTOR 2SA990 The 2SA 990 is designed for use in driver stage of A F amplifier. PACKAG E D IM E N S IO N S FEATURE • High hF E . in m illim ete rs inches h FE : 40 0 T YP. (V CE = - 6 . 0 V , !c = - 1 . 0 mA) 5 .2 M A X .


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    PDF 2SA990 2SA990 SX10-ht. PA33

    TRANSISTOR 2Sa640

    Abstract: 2SA640 2SA640 M
    Text: NEC PNP SILICO N TRANSISTOR ELECTRON DEVICE 2SA640 D E S C R IP T IO N The 2SA 6 40 is designed for use in A F low noise amplifier of P A C K A G E D IM E N S IO N S S T E R E O S E T , R A D IO and T A P E R E C O R D E R . in millimeters inches FEATU RES


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    PDF 2SA640 2SA640 TRANSISTOR 2Sa640 2SA640 M

    2SA842

    Abstract: 2SA842-BL IC-224 2SA84 2SA842-GR ica 700 ulma Produced by Perfect Crystal Device Technology transistor 2SA TRANSISTOR nf 842
    Text: i / i n y p N P x t : 9 * 5/ ? \ Æ h 5 y ÿ Z 9 p c T m ) SILICON PNP o EPITAXIAL TRANSISTOR (P C T PROCESS)^ r 2SA 842 U n i t i n mm Low N o i s e A u d i o A m p l i f i e r A p p l i c a t i o n s 05.8 MAX. • SUS-fflfttfM'-SWo • ¡ t» S * i# i|6 $ # & w 0


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    PDF 95MAX. 2sa842 2SA842 2SA842-BL IC-224 2SA84 2SA842-GR ica 700 ulma Produced by Perfect Crystal Device Technology transistor 2SA TRANSISTOR nf 842

    TRANSISTOR 2Sa 1075

    Abstract: TRANSISTOR 2Sc 2525 2SA audio POWER TRANSISTORS 2SA transistor 2SA1075 transistor 2SA 2SA POWER TRANSISTORS 2SA1076 TRANSISTOR 2SA1076 2sa tr
    Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1075 2SA1076 SILICON PNP RING EMITTER TRANSISTOR RET T h e 2S A 1 0 7 5 /2 S A 1 0 7 6 are silicon PNP general purpose, high power switching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h ­


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    PDF 2SA1075 2SA1076 1075/2SA 2525/2SC 10MHz 300ms TRANSISTOR 2Sa 1075 TRANSISTOR 2Sc 2525 2SA audio POWER TRANSISTORS 2SA transistor transistor 2SA 2SA POWER TRANSISTORS 2SA1076 TRANSISTOR 2SA1076 2sa tr

    2sa1757 transistor

    Abstract: A1757 2SA series transistor ITT 108 2sa1757
    Text: 2SA1757 Transistor, PNP Features Dimensions Units : mm • available In TO-220FP (SC-67) package • high speed switching, typically t{ = 0.15 jas at lc = - 3 A • low collector saturation voltage, typically VCE(sat) = -0.2 V at lC/ lB = -3 A/-0.15 A •


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    PDF 2SA1757 O-220FP SC-67) O-22QFP) 2SC4596 2sa1757 transistor A1757 2SA series transistor ITT 108 2sa1757

    2SC509

    Abstract: 2SA509 2sa509 transistor Produced by Perfect Crystal Device Technology MPC600 5M60 2SC509 Y 4300S
    Text: 509 g 2SA 2 5 5 9 / U D ^ P N P Ilf ? ^ ? J W B h > y ^ P C T S Ä ^SILIC O N PNP EPITAXIAL TRANSISTOR (PCT PROCESS) O •* -i y T > O A u d io P o w e r A m p l i f i e r A p p l i c a t i o n s o S w itch in g A p p lic a tio n s INDUSTRIAL APPLICATIONS


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    PDF 2sa509g 2SC509Â 2SC509 100X100X1MAÃ 2SC509 2SA509 2sa509 transistor Produced by Perfect Crystal Device Technology MPC600 5M60 2SC509 Y 4300S

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


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    PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    2SC482

    Abstract: 2SA485 2SC15-0 2SA484 2SA486 2SA496 2SA497 2SA501 2SA503 2SA504
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 2SA503 2SA504 7c-25-C) 2SA509 2SA510 2SA511 2SC482 2SA485 2SC15-0 2SA484 2SA486 2SA496 2SA497 2SA501 2SA503

    2sc2089

    Abstract: 2SA941 2SC2088 2SA942 A941 A942 L171
    Text: 5/ U D > P N P X W ^ 2/ ? i W B h 5 ^ ^ P C T J 5 Ä SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS) U n i t i n mm O Low N o i s e A u d i o A m p l i f i e r A p p l i c a t i o n s . • S ilH - ff T - to : Vc E 0 = ~ 1 2 0 V ( 2 S A 9 4 1 ) , - 9 0 V ( 2SA 942 )


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    PDF -120V 2SA941) 2SA942) 2SC2088, 2SC2089 -120V -10mA, 100Hz 2sc2089 2SA941 2SC2088 2SA942 A941 A942 L171

    2SC3514

    Abstract: transistor 2sa1 2SA1383 transistor TRANSISTOR Y7 2SA1383
    Text: 2SA1383 2SC3514 P N P / N P N o : t " ^ + ' > 7 ’; u J K ' > □ > b PN P / N P N Silicon Epitaxial Transistor Audio Frequency Pow er Amplifier 2SA 13*3/2SC 3514li fcH *«a««m t L X til - SsW S£ » t - iM / P A C K A G E D IM E N S IO N S (Unit : mm


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    PDF 383/2SC3514 2SA13tt/2SC3514li 2SA1383/2SC3514 PWS350 2SC3514 transistor 2sa1 2SA1383 transistor TRANSISTOR Y7 2SA1383

    transistor 2sa 1072

    Abstract: "ring emitter" transistor 2SA 2SA audio POWER TRANSISTORS 2SA1072 2SA1073 2SA107 transistors 2SA fujitsu ring emitter transistor 2sc pnp
    Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1072 2SA1073 ^ September 1979 SILICON PNP RING EM ITTER TRANSISTOR RET T h e 2 S A 1 0 7 2 /2 S A 1 0 7 3 are silicon PNP general purpose, high p ow er sw itching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h ­


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    PDF 2SA1072 2SA1073 1072/2SA 2SA1072/2SA1073 2522/2SC 2523age 10MHz 300ms transistor 2sa 1072 "ring emitter" transistor 2SA 2SA audio POWER TRANSISTORS 2SA1073 2SA107 transistors 2SA fujitsu ring emitter transistor 2sc pnp

    TRANSISTOR nf 841

    Abstract: NF 841 2SA841 2SA841BL 2SA841-BL TRANSISTOR 2Sa841 transistor 2SA TRANSISTOR 841 2SA amplifier 2SA transistor
    Text: 2s a 841 5/ U D > P N P I t i ^ 2/^ W B S 5 > y ^ P C T B S C ^ IL IC O N PNP EPITAXIAL TRANSISTOR (P C T PROCESS) o fi js m.<&m t * is m o Low N o i s e Audio Am plifier Applications Uni t i n Bin ^ 5 . 8 MAX,. : ^CEO = - 6 0V : NF = 6 d B ( M a x . ) / R g =« 1100kkS2


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    PDF 2sa841 100/lA 100-M. TRANSISTOR nf 841 NF 841 2SA841 2SA841BL 2SA841-BL TRANSISTOR 2Sa841 transistor 2SA TRANSISTOR 841 2SA amplifier 2SA transistor

    transistor a7t

    Abstract: 2SA917 709a 2SA916 2SC1931 SA 1941 2SA562 T 2SA562 2SA914 2SA915
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 2SA914 Tc-25 175MHz, /-27MHz, 2SA562 transistor a7t 2SA917 709a 2SA916 2SC1931 SA 1941 2SA562 T 2SA915

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


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    PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    Untitled

    Abstract: No abstract text available
    Text: 2SA1036K 2SA1577 Transistor, PNP Features Dimensions Units : mm • available in SM T3 (SMT, SC -59) and U M T3 (UNIT, SC -70) packages • package marking: 2SA 1036K and 2SA1577; (-!★, where ★ is hFE code • large collector current: ^C(max) = - 500 mA


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    PDF 2SA1036K 2SA1577 1036K 2SA1577; 2SA1036K 29x02 10x02 08x01 2SA1036K,

    transistor B 560

    Abstract: B 560 PNP TRANSISTOR 2sa933as 2SA series transistor 2SA933
    Text: 2SA933AS Transistor, PNP Features Dimensions Units : mm • available in SPT (SC-72) package • general purpose transistor with ^C(max) = ~150 mA, P c ( m a x ) = ^00 mW complementary pair with 2SC1740S 2SA933AS (SPT) 4 ± 0.2j 2 ±0 ,2 Applications


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    PDF 2SA933AS SC-72) 2SC1740S 2SA933AS transistor B 560 B 560 PNP TRANSISTOR 2SA series transistor 2SA933

    2SA transistor

    Abstract: high current Darlington pair IC
    Text: 2SA830S Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in SPT (SC-72) package • Darlington connection provides high gain, typically hFE = 20000 at lc = -100 mA 2SA830S (SPT) • built-in resistance of approximately 4 k il between base and emitter


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    PDF 2SA830S SC-72) 2SC1645S 2SA830S 2SA transistor high current Darlington pair IC

    2SA1036K

    Abstract: transistor surface mount to 2SA1577 2SC2411K 2SC4097 T106 T146 transistor PNP
    Text: 2SA1036K 2SA1577 Transistor, PNP Features Dimensions U n its: mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1036K and 2SA1577; H-*, where ★ is hFE code • • • large collector current: ^C(max) = —500 mA


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    PDF 2SA1036K 2SA1577 SC-59) SC-70) 2SA1577; 2SC2411K 2SC4097 2SA1036K 2SA1577 transistor surface mount to T106 T146 transistor PNP

    2SA1561A

    Abstract: No abstract text available
    Text: 2SA1561A Transistor, PNP Features • available in FTL TL2 package • general purpose transistor with ^C max = “ 150 mA, P c ( m a x ) = 300 mW • complementary pair with 2SC4038 Dimensions (Units : mm) 2SA1561A (FTL TL 2) I 6 .8 ±0.2 n l 2.4 ±0.2 I


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    PDF 2SA1561A 2SC4038 2SA1561A

    2SA 016

    Abstract: A1834 2SA series transistor transistor B 560
    Text: 2SA1834F5 Transistor, PNP Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SA1834F5 (CPT F5) package marking: A1834^Q, where ★ is hFE code and □ is lot number low collector saturation voltage V c E ( s a t) = - 0 . 1 6 V for l c = - 4 A,


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    PDF 2SA1834F5 SC-63) A1834 2SC5001 2SA1834F5 2SA 016 2SA series transistor transistor B 560