2SA1585
Abstract: 2SA1585S 2SB1424 2SC4115S 2SD2150 SC-72 T100
Text: 2SB1424 / 2SA1585S Transistors Low VCE sat Transistor (−20V, −3A) 2SB1424 / 2SA1585S zExternal dimensions (Unit : mm) 2SB1424 2SA1585S 4±0.2 1.0±0.2 (1) zStructure Epitaxial planar type PNP silicon transistor 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1
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2SB1424
2SA1585S
2SB1424
SC-62
15Min.
2SD2150
2SC4115S.
2SA1585
2SA1585S
2SC4115S
SC-72
T100
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Untitled
Abstract: No abstract text available
Text: 2SB1424 / 2SA1585S Transistors Low VCE sat Transistor (−20V, −3A) 2SB1424 / 2SA1585S zExternal dimensions (Unit : mm) 2SB1424 2SA1585S 4±0.2 1.0±0.2 (1) zStructure Epitaxial planar type PNP silicon transistor 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1
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2SB1424
2SA1585S
2SD2150
2SC4115S.
2SB1424
15Min.
SC-62
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2SA1585
Abstract: No abstract text available
Text: ST 2SA1585 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into two groups, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g
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2SA1585
2SA1585
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2SA1585
Abstract: transistor 2SA1585
Text: ST 2SA1585 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into two groups, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g
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2SA1585
2SA1585
transistor 2SA1585
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2SA1585E
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C 2SA1585E WBFBP-03A TRANSISTOR 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B E C 1. BASE FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A)
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WBFBP-03A
2SA1585E
WBFBP-03A
2SA1585E
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C 2SA1585E WBFBP-03A TRANSISTOR 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B E C 1. BASE FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A)
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WBFBP-03A
2SA1585E
WBFBP-03A
100MHz
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245 transistor
Abstract: ic 245 2SD2150 transistor Ic 1A datasheet NPN 2SA1585S 20V3A 2SC4115 equivalent transistor an 243 npn 2a NPN Silicon Epitaxial Planar Transistor
Text: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)
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2SD2150
2SC4115S
2SD2264
2SB1424
2SA1585S.
96-237-C74)
245 transistor
ic 245
transistor Ic 1A datasheet NPN
2SA1585S
20V3A
2SC4115
equivalent transistor an 243
npn 2a
NPN Silicon Epitaxial Planar Transistor
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Untitled
Abstract: No abstract text available
Text: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)
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2SD2150
2SC4115S
2SD2264
2SB1424
2SA1585S.
96-237-C74)
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Untitled
Abstract: No abstract text available
Text: Transistors Low VCE sat Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. FExternal dimensions (Units: mm)
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2SB1424
2SA1585S
2SD2150
2SC4115S.
96-596-A74)
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sit transistor
Abstract: transistor Ic 1A datasheet transistor sit 20V3A 2SD2150 2SA1585S 2SB1424 2SC4115S A-74
Text: Transistors Low VCE sat Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. FExternal dimensions (Units: mm)
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2SB1424
2SA1585S
2SD2150
2SC4115S.
96-596-A74)
sit transistor
transistor Ic 1A datasheet
transistor sit
20V3A
2SA1585S
2SC4115S
A-74
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1585S TRANSISTOR PNP TO-92S FEATURES 1. EMITTER Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) Excellent DC current gain characteristics. Power dissipation
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O-92S
2SA1585S
O-92S
100MHz
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2SC4115
Abstract: 2SA1585 4115S 4115
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR NPN SOT-89 FEATURES z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) z Excellent current gain characteristics. z Complements to 2SA1585
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OT-89
2SC4115
OT-89
2SA1585
100MHz
4115Q
4115R
4115S
2SC4115
2SA1585
4115S
4115
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2SA1585S
Abstract: 2SC4115S SC-72
Text: 2SC4115S Transistors Low Frequency Transistor 20V, 3A 2SC4115S zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SA1585S. 2SC4115S 2±0.2
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2SC4115S
2SA1585S.
15Min.
SC-72
2SA1585S
2SC4115S
SC-72
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2SA1585S
Abstract: 2SC4115S SC-72
Text: 2SC4115S Transistors Low Frequency Transistor 20V, 3A 2SC4115S zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) ̈́IC / IB = 2A / 0.1Aͅ 2) Excellent current gain characteristics. 3) Complements the 2SA1585S. 2SC4115S 2±0.2
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2SC4115S
2SA1585S.
15Min.
SC-72
2SA1585S
2SC4115S
SC-72
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1585S TRANSISTOR PNP TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD : 3. BASE 0.4W (Tamb=25℃) Collector current I CM : -2A Collector-base voltage
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O-92S
2SA1585S
O-92S
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR NPN SOT-89-3L FEATURES z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) z Excellent current gain characteristics. z Complements to 2SA1585
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OT-89-3L
2SC4115
OT-89-3L
2SA1585
100MHz
4115Q
4115R
4115S
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2SA1585S
Abstract: 2SC4115S SC-72
Text: Low Frequency Transistor 20V, 3A 2SC4115S zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SA1585S. zDimensions(Unit:mm) 2SC4115S 2±0.2 (15Min.) 3Min. 3±0.2 4±0.2
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2SC4115S
2SA1585S.
15Min.
SC-72
R0039A
2SA1585S
2SC4115S
SC-72
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1585S ＴＯ－９２Ｓ TRANSISTOR PNP 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD : 0.4W（Tamb=25℃） Collector current I CM: -2A Collector-base voltage
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O-92S
2SA1585S
100MHz
270TYP
050TYP
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2SA1585S
Abstract: TO92S
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1585S TRANSISTOR PNP TO-92S FEATURES 1. EMITTER Low VCE(sat). Excellent DC current gain characteristics. Power dissipation z z z 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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O-92S
2SA1585S
O-92S
100MHz
2SA1585S
TO92S
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2SA1585S
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-92S Plastic-Encapsulated Transistors 2SA1585S TRANSISTOR PNP TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PD : 0.4W (Tamb=25℃) Collector current I CM : -2A Collector-base voltage V(BR)CBO : -20V
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O-92S
2SA1585S
O-92S
100MHz
2SA1585S
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1585S TRANSISTOR PNP TO-92S FEATURES 1. EMITTER Low VCE(sat). Excellent DC current gain characteristics. Power dissipation z z z 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-92S
2SA1585S
O-92S
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC4115S TRANSISTOR NPN 1. EMITTER FEATURES z Low VCE(sat). z Excellent Current Gain Characteristics. z Complements The 2SA1585S. 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-92S
2SC4115S
2SA1585S.
100mA
100MHz
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TO92S
Abstract: 2sa158
Text: 2SA1585S TO-92S Transistor PNP TO-92S 1. EMITTER 2. COLLECTOR 123 3. BASE Features Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) Excellent DC current gain characteristics. Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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O-92S
2SA1585S
O-92S
100MHz
TO92S
2sa158
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Untitled
Abstract: No abstract text available
Text: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •Features 1) •External dimensions (Units: mm) LOW VcE(sat). VcE(sai) = 0 . 2 V ( T y p .) ( I c / I b = 2A/Û.1A) 2) Excellent current gain characteris tics. 3) Complements the 2SB1424/2SA1585S.
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2SD2150/2SC4115S/2SD2264
2SB1424/2SA1585S.
96-237-C74)
2SD2150
2SC4115S
2SD2264
5mQ010
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