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    TRANSISTOR 2SA1930 Search Results

    TRANSISTOR 2SA1930 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SA1930 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c5171

    Abstract: transistor c5171 2SC5171 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 transistor equivalent 2SA1930
    Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC5171 2SA1930 2-10R1A c5171 transistor c5171 2SC5171 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 transistor equivalent 2SA1930

    2sc5171

    Abstract: No abstract text available
    Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC5171 2SA1930 2-10R1A 2sc5171

    transistor c5171

    Abstract: C5171 2SC5171 transistor equivalent 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 2SA1930 2sc517
    Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC5171 2SA1930 2-10R1A transistor c5171 C5171 2SC5171 transistor equivalent 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 2SA1930 2sc517

    A1930

    Abstract: transistor a1930 2SA1930 2SA1930 2sc5171 toshiba A1930 transistor 2SA1930
    Text: 2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SC5171 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SA1930 2SC5171 SC-67 2-10R1A A1930 transistor a1930 2SA1930 2SA1930 2sc5171 toshiba A1930 transistor 2SA1930

    A1930

    Abstract: transistor a1930 2SA1930 2sa1930 transistor equivalent toshiba A1930 2SA1930 2sc5171 2SC5171
    Text: 2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SC5171 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SA1930 2SC5171 SC-67 2-10R1A A1930 transistor a1930 2SA1930 2sa1930 transistor equivalent toshiba A1930 2SA1930 2sc5171 2SC5171

    transistor c5171

    Abstract: c5171 2sc5171
    Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC5171 2SA1930 2-10R1A transistor c5171 c5171 2sc5171

    Untitled

    Abstract: No abstract text available
    Text: , Line. J.E.IIS.U C7 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1930 Silicon PNP Power Transistor DESCRIPTION • High Transition Frenquency : fr=200MHz(Typ.) • Complementary to 2SC5171


    Original     		PDF 2SA1930 200MHz 2SC5171 O-220F -10mA

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SC4793 2sa1837

    Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
    Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y


    Original     		PDF 2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314 2SC2982 2SC5755 2SA2066 2SC5785 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    2SA1930 2sc5171

    Abstract: 2SA1930 2SC5171
    Text: TO SH IBA 2SA1930 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 930 POWER AMPLIFIER APPLICATIONS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS High Transition Frequency : fp = 200 MHz Typ. • Complementary to 2SC5171 ± 0.2 ÍY^ o 2.7±Q 2 of 3.9


    OCR Scan     		PDF 2SA1930 2SC5171 2SA1930 2sc5171 2SA1930 2SC5171

    2SA1930 2sc5171

    Abstract: transistor 2sc5171 2SC5171 2SA1930
    Text: TOSHIBA 2SC5171 2 S C 5 1 71 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS r • • High Transition Frequency : fp = 200MHz Typ. Complementary to 2SA1930 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5171 200MHz 2SA1930 2-10R1A 2SA1930 2sc5171 transistor 2sc5171 2SC5171 2SA1930

    Untitled

    Abstract: No abstract text available
    Text: 2SA1930 T O SH IB A 2 S A 1 930 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ± 0 .3 • • High Transition Frequency : Pp = 200MHz Typ. Complementary to 2SC5171 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SA1930 200MHz 2SC5171 2-10R1A -180V

    Untitled

    Abstract: No abstract text available
    Text: 2SC5171 T O SH IB A TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE 2 S C 5 1 71 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ± 0 .3 • • High Transition Frequency : Pp = 200MHz Typ. Complementary to 2SA1930 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5171 200MHz 2SA1930 2-10R1A

    2SA1930

    Abstract: 2SC5171 VQE 11E 2SA19 transistor 2SA1930
    Text: 2SA1930 TOSHIBA 2 S A 1 930 TO S H IB A TRANSISTOR POWER AM PLIFIER APPLICATIO NS SILICON PNP E PITAX IAL TYPE Unit in mm DRIVER STAGE AM PLIFIER APPLICATIO NS 10 ±0.3 -5 y < High Transition Frequency : fp = 200 MHz Typ. Complementary to 2SC5171 o


    OCR Scan     		PDF 2SA1930 2SC5171 2SA1930 2SC5171 VQE 11E 2SA19 transistor 2SA1930

    2sa1930

    Abstract: 2SA1930 2sc5171 2SC5171
    Text: TOSHIBA 2SA1930 2 S A 1 930 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS r • • High Transition Frequency : fp = 200MHz Typ. Complementary to 2SC5171 2 '^ "<v>0 o M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SA1930 200MHz 2SC5171 2-10R1A -180V 2sa1930 2SA1930 2sc5171 2SC5171

    2SA1930

    Abstract: No abstract text available
    Text: 2SA1930 TOSHIBA TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE 2 SA 1 9 3 Q Unit in mm DRIVER STAGE AM PLIFIER APPLICATIONS 10 + 0.3 • High Transition Frequency : fr = 200MHz Typ. • P íim n lp tr iíin f a rv tn , f 3.2 ±0.2


    OCR Scan     		PDF 2SA1930 200MHz 2-10R1A -180V --10mA. 2SA1930

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5171 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 1 <;r s 1 7 1 MT WÊÊÊF •M ■ Unit in mm POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS • • 10 + 0.3 , f 3.2 ± 0 . 2 2.7±02 High Transition Frequency : fr = 200MHz Typ.


    OCR Scan     		PDF 2SC5171 200MHz 2SA1930 2-10R1A

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2SA1930 2sc5171

    Abstract: 2SC5171 2SA1930
    Text: TO SH IBA 2SC5171 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE 2 S C 5 1 71 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ±0.3 r • • 1.1 cn ro o 1.1 UNIT 0.75 ±0.15 V 2.54 ± 0.25 2.54±0.25 V V A 1 2 3 ic A :B 1. BASE


    OCR Scan     		PDF 2SC5171 200MHz 2SA1930 2-10R1A --180V, 2SA1930 2sc5171 2SC5171 2SA1930