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    TRANSISTOR 2SA854S Search Results

    TRANSISTOR 2SA854S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SA854S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC2411K / 2SC4097 / 2SC1741S Transistors Medium Power Transistor 32V, 0.5A 2SC2411K / 2SC4097 / 2SC1741S !External dimensions (Units : mm) 2SC2411K 2SC4097 1.1+0.2 −0.1 1.9±0.2 2.0±0.2 0.8±0.1 2.8±0.2 (3) (3) !Structure Epitaxial planar type NPN silicon transistor


    Original     		PDF 2SC2411K 2SC4097 2SC1741S 2SA1036K 2SA1577 2SA854S. 2SC2411K

    2SA1036K

    Abstract: 2SA1577 2SA854S 2SC1741S 2SC2411K 2SC4097 SC-72 T146
    Text: 2SC2411K / 2SC4097 / 2SC1741S Transistors Medium Power Transistor 32V, 0.5A 2SC2411K / 2SC4097 / 2SC1741S !External dimensions (Units : mm) 2SC2411K 2SC4097 1.1+0.2 −0.1 1.9±0.2 2.0±0.2 0.8±0.1 2.8±0.2 (3) (3) !Structure Epitaxial planar type NPN silicon transistor


    Original     		PDF 2SC2411K 2SC4097 2SC1741S 2SC2411K 2SC4097 SC-59 15Min. 2SA1036K 2SA1577 2SA854S 2SC1741S SC-72 T146

    c102 TRANSISTOR

    Abstract: 2N3904 A41 transistor c102 c101 TRANSISTOR TRANSISTOR 246 transistor c101 2n2222+331+transistors 2SC4043 TRANSISTOR 618 609 transistor
    Text: Transistors Medium Power Transistor *32V, *0.5A 2SA1036K / 2SA1577 / 2SA854S FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FExternal dimensions (Units: mm) FStructure


    Original     		PDF 2SA1036K 2SA1577 2SA854S 500mA 2SC2411K 2SC1741S 2SC4097. 96-86-B11) c102 TRANSISTOR 2N3904 A41 transistor c102 c101 TRANSISTOR TRANSISTOR 246 transistor c101 2n2222+331+transistors 2SC4043 TRANSISTOR 618 609 transistor

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor *32V, *0.5A 2SA1036K / 2SA1577 / 2SA854S FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FExternal dimensions (Units: mm) FStructure


    Original     		PDF 2SA1036K 2SA1577 2SA854S 500mA 2SC2411K 2SC1741S 2SC4097. 96-86-B11)

    transistor 206

    Abstract: 2SA1036K 2SA1577 500ma pnp AS 205 transistor "Power transistor" 2sa157 ic 204 transistor 2SA854s 2SA854S
    Text: Transistors Medium Power Transistor *32V, *0.5A 2SA1036K / 2SA1577 / 2SA854S FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FExternal dimensions (Units: mm) FStructure


    Original     		PDF 2SA1036K 2SA1577 2SA854S 500mA 2SC2411K 2SC1741S 2SC4097. 96-86-B11) transistor 206 500ma pnp AS 205 transistor "Power transistor" 2sa157 ic 204 transistor 2SA854s 2SA854S

    c101 TRANSISTOR

    Abstract: C102 transistor 609 transistor transistors transistor c101 C102 pnp c102, transistor transistor c102 TRANSISTOR 612 2n3904 TRANSISTOR PNP
    Text: Transistors Medium Power Transistor *32V, *0.5A 2SA1036K / 2SA1577 / 2SA854S FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FExternal dimensions (Units: mm) FStructure


    Original     		PDF 2SA1036K 2SA1577 2SA854S 500mA 2SC2411K 2SC1741S 2SC4097. 96-86-B11) 2SA1037AK 2SA1576A c101 TRANSISTOR C102 transistor 609 transistor transistors transistor c101 C102 pnp c102, transistor transistor c102 TRANSISTOR 612 2n3904 TRANSISTOR PNP

    TRANSISTOR 246

    Abstract: 2SC1741S 2SC4097 "Power transistor" 2SC24 NPN Silicon Epitaxial Planar Transistor 2SA1036K 2SA1577 2SA854S 2SC2411K
    Text: Transistors Medium Power Transistor 32V, 0.5A 2SC2411K / 2SC4097 / 2SC1741S FFeatures 1) High Ic(Max.) IC(Max.) = 0.5A 2) Low VCE(sat). Ideal for low voltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S. FExternal dimensions (Units: mm) FStructure


    Original     		PDF 2SC2411K 2SC4097 2SC1741S 2SA1036K 2SA1577 2SA854S. 96-156-D11) TRANSISTOR 246 2SC1741S "Power transistor" 2SC24 NPN Silicon Epitaxial Planar Transistor 2SA854S

    2SA854S

    Abstract: 2SC1741S SC-72 T146
    Text: 2SA854S Transistors Medium Power Transistor -32V, -0.5A 2SA854S zExternal dimensions (Unit : mm) zFeatures 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Idea for low-voltage operation. 3) Complements the 2SC1741S. 2SA854S 4 ±0.2 (15Min.) 3Min. 3 ±0.2 2 ± 0.2


    Original     		PDF 2SA854S -500mA 2SC1741S. 15Min. SC-72 2SA854S 2SC1741S SC-72 T146

    2SA1036K

    Abstract: 2SA1577 QR 2SA1577 2SA854S 2SC1741S SC-72
    Text: 2SC1741S Transistors Medium Power Transistor 32V, 0.5A 2SC1741S zExternal dimensions (Units : mm) 2SC1741S 2±0.2 3Min. 3±0.2 4±0.2 (15Min.) zFeatures 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S.


    Original     		PDF 2SC1741S 15Min. 2SA1036K 2SA1577 2SA854S. SC-72 2SA1577 QR 2SA854S 2SC1741S SC-72

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC1741S TRANSISTOR NPN 1. EMITTER FEATURES z High IC z Low VCE(sat). Optimal for Low Voltage Operation z Complements the 2SA854S 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-92S 2SC1741S 2SA854S 100mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SA854S TRANSISTOR PNP 1. EMITTER FEATURES z Large IC. z Low VCE(sat). Idea for Low-voltage Operation. z Complements the 2SC1741S. 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-92S 2SA854S 2SC1741S. -10mA -100mA -20mA, 100MHz

    S78DM12Q

    Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
    Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power


    Original     		PDF SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300

    PN3906 TRANSISTOR PNP

    Abstract: 2SC174OS PN3906 PNP switching transistor 2N3906 mhz SPEC-C37 SPEC-A38 PN3904 MMST8098 transistor bc 588 TRANSISTOR MARKING CODE R2A
    Text: m - Transistors RCHV s the leaclng volume manufacturer of surface mount small slgnal transistors These transistors help to reduce size and increase performance of a variety of devices of any kind :c i?"^ PNP SMTYSST3 UMT3 EMT3 t>l- NPN PNP NPN PNP EMT3"' SPT/TO-92


    Original     		PDF SPT/TO-92 SPTTO-92 llU--800 loo250-700 loo--300 lOO-60( 250-63t loo05 loo56 UMT3906 PN3906 TRANSISTOR PNP 2SC174OS PN3906 PNP switching transistor 2N3906 mhz SPEC-C37 SPEC-A38 PN3904 MMST8098 transistor bc 588 TRANSISTOR MARKING CODE R2A

    2SA1036K L T146

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S •External dimensions (Units: mm) 2SA1577 2SA1036K 1 1+0.2 ; -0;1 [0.&SQ.95] 0 .8 ± 0 .1 U (ß 1.3±0.1 f 1 0.65 0 65 y fa +J i! (3)01 _ •Structure Epitaxial planar type PNP silicon transistor


    OCR Scan     		PDF 2SA1036K/2SA1577/2SA854S -500mA 2SC2411K/ 2SC1741S 2SC4097. 2SA1036K 2SA1577 2SA854S 2SA1036K L T146

    2SA1036K

    Abstract: 2SA1577 2SA854S 2SC1741S 2SC2411K 2SC4097
    Text: 2SC2411K / 2SC4097 / 2SC1741S Medium Power Transistor 32V, 0.5A 2SC2411K / 2SC4097 / 2SC1741S •Features 1) High ICMax. lcMax.= 0.5mA •External dimensions (Units : mm) 2) Low VcBsat). Optimal for low voltage operation.


    OCR Scan     		PDF 2SC2411K 2SC4097 2SC1741S 2SC2411K/ 2SC409712SC1741S 2SA1036K/ 2SA1577 2SA854S. 2SC2411K SC-59 2SA1036K 2SA854S 2SC1741S

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.5A 2SC2411K/2SC4097/2SC1741S •F e a tu re s 1) High IcMax. IcMax. = 0.5mA 2) Low VcE(sat). O ptim al fo r low v o lt­ age operation. 3) Complements the 2SA1036K/2SA1577 / 2SA854S. •E x te rn a l dimensions (Units: mm)


    OCR Scan     		PDF 2SC2411K/2SC4097/2SC1741S 2SA1036K/2SA1577 2SA854S. 2SC2411K 2SC4097 SC-59

    C1741S

    Abstract: 2SAB54S 2SAB54
    Text: 2SA854S Transistor, PNP Features Dimensions Units : mm available in S P T (SC -72) package 2SAB54S (SPT) large co lle ctor current -500 mA C(max) 1 • suitable fo r low -voltage operation because of its low saturation voltage • com plem entary pair w ith 2 S C 1 741S


    OCR Scan     		PDF 2SA854S 2SAB54S 2SA854S C1741S 2SAB54S 2SAB54

    A854S

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S • F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) Large lc. Icmbx, — —500mA 2SA1577 2SA1036K 2) Low VcEisat). O p tim a l fo r lo w -v o ltage operation. 3) Com plem ents the 2SC 2411K/


    OCR Scan     		PDF 2SA1036K/2SA1577/2SA854S 2SA1036K 2SA1577 --500mA 2411K/ 2SC1741S/2SC4097. SC-59 SC-70 A854S

    2SC1740 transistor

    Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
    Text: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN


    OCR Scan     		PDF 2SC2021LN 2SB821 2SB1276 2SC2021MLN O-92L O-92LS 2SB737 V2SD786 2SA1137 2SC1740 2SC1740 transistor A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S •F e a tu re s IcMax. = - 5 0 0 m A 2) • E x t e r n a l d im e n s io n s (U nits: m m ) L a rg e lc. 2SA1577 2SA1036K L o w VcE(sat). O p tim a l f o r lo w - v o lt'¿±0.1


    OCR Scan     		PDF 2SA1036K/2SA1577/2SA854S 2SA1577 2SA1036K SC-59 SC-70 0Dlb713 O-220FN O-220FN O220FP T0-220FP,

    C2021M

    Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
    Text: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)


    OCR Scan     		PDF 2SC2021LJNE) 2SB821 2SA937ALN \2SC2021LN 2SB1276 2021M 2SA937AM 2SB737 2SD786 2SA1137 C2021M B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    transistor 1301

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.5A 2 S C 2 4 1 1 K /2 S C 4 0 9 7 /2 S C 1 7 4 1 S •F e a tu re s 1 ) H ig h »External dimensions (Units: mm) ICMax. IcMw. = 0.5mA 2) Low VcE(sat). O ptim al fo r low vo lt­ age operation. 3) Complements the


    OCR Scan     		PDF 2SC2411K 2SC4097 2SA1036K/2SA1577 2SA854S. transistor 1301

    Mosfet FTR 03-E

    Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
    Text: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP


    OCR Scan     		PDF 2SK1976 2SK2095 2SK2176 O-220FP 2SA785 2SA790 2SA790M 2SA806 Mosfet FTR 03-E mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337